Abstract: A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

Abstract: A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

Abstract: A cleaning agent for a substrate having a copper wiring consisting of an aqueous solution comprising [I] an amino acid represented by the following general formula [1], and [II] an alkylhydroxylamine; and a method for cleaning a semiconductor substrate having a copper wiring characterized by using the relevant cleaning agent for a substrate having a copper wiring; (wherein R1 represents a hydrogen atom, a carboxymethyl group or a carboxyethyl group; and R2 and R3 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, which may have a hydroxyl group, provided that those where R1 to R3 are all hydrogen atoms are excluded.).