Abstract: The apparatus comprising a partition, a plurality of inner magnetic rings, and a plurality of outer magnetic rings is disclosed. The outer magnetic rings are magnetically coupled to the inner magnetic rings via the partition. The inner magnetic rings comprises a plurality of magnets disposed around a first yoke member. The outer magnetic rings comprise a plurality of magnets disposed around a second yoke member. One or both of the first and second yoke members can be disassembled.

Abstract: The apparatus comprising a partition, a plurality of inner magnetic rings, and a plurality of outer magnetic rings is disclosed. The outer magnetic rings are magnetically coupled to the inner magnetic rings via the partition. The inner magnetic rings comprises a plurality of magnets disposed around a first yoke member. The outer magnetic rings comprise a plurality of magnets disposed around a second yoke member. One or both of the first and second yoke members can be disassembled.

Abstract: A low pressure plasma ignition method and apparatus includes an ignition cylinder which passes through an anode of a vacuum chamber, where the outlet of the ignition cylinder forms a nozzle. A coil is arranged around the cylinder and a plasma-generating gas supply pipe passes through an upper part of the cylinder. A plasma-generating gas, such as Argon gas, is supplied to the ignition cylinder in this structure, such that a high density plasma is formed in the ignition cylinder that is expelled into the vacuum chamber while the pressure is reduced through the nozzle. In the vacuum chamber, the expelled plasma becomes a seed plasma, such that a low pressure plasma is readily generated in the vacuum chamber.

Abstract: The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

Abstract: A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

Abstract: In a semiconductor manufacturing apparatus, provided are a vacuum processing chamber which implements a required processing to an object of processing under an atmosphere of reduced pressure, a single spare vacuum processing chamber provided to one side and adjacent to the vacuum processing chamber and provided with a support mechanism to support the object of processing and a conveyor arm to convey the object of processing internally. Thus the object of processing is conveyed to the vacuum processing chamber and conveyed from the vacuum processing chamber via the spare vacuum processing chamber.

Abstract: A magnetron plasma processing apparatus including a vacuum chamber storing an object to be etched, a first electrode provided in the vacuum chamber to hold the object, a second electrode disposed to one side of the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means including a magnetic block disposed outside the chamber on the opposite side of the second electrode and rotatable about an axis normal to the object held by the first electrode, and a power-supply unit which feeds power to either of the first and second electrodes and generates discharge between these parallel electrodes. The magnetic block has end surfaces provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between the magnetic poles.

Abstract: The present invention relates to a surface processing apparatus which performs heating processing of an object of heating which is mounted on a mounting device provided inside a process container, and which includes a plural number of lamps provided so as to oppose a rear surface of a processing surface of an object of processing, a rotating unit which has the plural number of lamps mounted to it in a ring shape, and a drive unit which drives the rotating unit. Also, the present invention relates to a processing apparatus for leading a process gas from a gas supply tube to a gas chamber partitioned inside a process container, and which blows process gas from an outlet of the gas chamber and onto an object of processing which is mounted on a mounting device provided inside the process container, and which includes a plural number of partition plates each provided with a plural number of through holes, being provided at required intervals in a direction of gas flow and inside the gas chamber.

Abstract: A heating furnace for semiconductor wafers having a heater arranged around a core tube, layers of a heat insulating material made of a porous heat insulating material or ceramic fibers arranged around the heater, and layers of a heat reflecting material arranged in the layers of the heat insulating material.

Abstract: A wafer feeding apparatus comprises a horizontally movable arm section, an electrostatic chuck mechanism having a vertically movable support member attached to the arm section and moving mechanism for moving the support member, and an electrostatic chuck attached to the support member and having two semi-circular electrodes located in a manner to be electrically isolated from each other and each having a wafer attraction section and an insulating film formed on the wafer attraction section. A direct-current voltage is across the electrodes to electrostatically attract a semiconductor wafer to the wafer attraction sections of the electrodes through the insulating film.