Abstract: Provided is a sputtering target that can reduce the occurrence of flaws while having the same level of conductivity as a conventional aluminum sputtering target. The aluminum sputtering target contains 0.005 atomic % to 0.04 atomic % of Ni; and 0.005 atomic % to 0.06 atomic % of La, with the balance being Al and inevitable impurities.

Abstract: Disclosed is a Cu—Ga alloy sputtering target which enables the formation of a Cu—Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the reduction of occurrence of arcing during sputtering, has high strength, and rarely undergoes cracking during sputtering. Specifically disclosed is a Cu—Ga alloy sputtering target which comprises a Cu-based alloy containing Ga, has an average crystal particle diameter of 10 ?m or less, and has a porosity of 0.1% or less.

Abstract: A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion.

Abstract: A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion.

Abstract: A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion.

Abstract: Disclosed is magnetic recording media having a high coercivity sufficient to cope with the recent high density recording, low noise property and excellent squareness, and a target for forming a magnetic film useful for realizing the magnetic recording media. The magnetic film is made of a Co based alloy containing: Cr in an amount of 8-18 atomic %; one kind or more of elements selected from a group consisting of V, Mo and W in an amount of 3-10 atomic %, or one kind or more of the elements and Ta in an amount of 3-10 atomic %; Pt in an amount of 0.5 to 20 atomic % or Ni in an amount of 5-30 atomic %, as needed; and the balance being Co and inevitable impurities, wherein the total content of Cr and one kind or more of the elements selected from a group consisting of V, Mo and W, or of Cr and one kind or more of the elements and Ta is specified to be 24 atomic % or less.

Abstract: Magnetic recording media, wherein a substrate of Al-Mg alloy prepared from aluminum metal at a purity of higher than 99.99% is surface finished by electrolytic abrasive polishing and a thin film layer of ferromagnetic material is formed thereover as a recording layer.The Al-Mg alloy is preferably prepared by rapid-cooling solidification.