Abstract: This transistor sensor includes a substrate, a channel layer provided over one surface of the substrate, and a solid electrolyte layer provided between the substrate and the channel layer or over a surface of the channel layer on an opposite side to the substrate side, in which the channel layer includes an inorganic semiconductor, the solid electrolyte layer includes an inorganic solid electrolyte, and at least a portion of either one or both of the channel layer and the solid electrolyte layer includes an exposed portion exposed to outside.

Abstract: A multilayer reflection electrode film includes a Ag film that is formed of Ag or an Ag alloy; and a transparent conductive oxide film that is disposed on the Ag film, in which the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two or more elements selected from the group consisting of Sn, Y, and Ti.

Abstract: A multilayer transparent conductive film is provided, including: a Ag film that is formed of Ag or a Ag alloy; and a transparent conductive oxide film that is disposed on two opposite surfaces of the Ag film, in which the transparent conductive oxide film is formed of an oxide including Zn, Ga, and Ti.

Abstract: A multilayer reflection electrode film includes a Ag film that is formed of Ag or an Ag alloy; and a transparent conductive oxide film that is disposed on the Ag film, in which the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two or more elements selected from the group consisting of Sn, Y, and Ti.

Abstract: Disclosed is a thin-film solid secondary cell (1) wherein a positive electrode collector layer (20), a positive electrode active material layer (30), a solid electrolyte layer (40), a negative electrode active material layer (50) and a negative electrode collector layer (20) are arranged on a substrate (10). The positive electrode active material layer (30) is a thin film composed of a metal oxide containing a transition metal and lithium, while the negative electrode active material layer (50) is a thin film composed of a semiconductor, a metal, an alloy or a metal oxide other than vanadium oxide. At least layers other than collector layers (20) are amorphous thin films. The substance constituting the solid electrolyte layer (40) is lithium phosphate (Li3PO4) or lithium phosphate added with nitrogen (LIPON).