Patents by Inventor Hiromi Okazaki
Hiromi Okazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11894406Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: GrantFiled: December 22, 2022Date of Patent: February 6, 2024Assignee: Sony Group CorporationInventor: Hiromi Okazaki
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Publication number: 20230126548Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: ApplicationFiled: December 22, 2022Publication date: April 27, 2023Applicant: SONY GROUP CORPORATIONInventor: Hiromi Okazaki
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Patent number: 11569286Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: GrantFiled: March 29, 2021Date of Patent: January 31, 2023Assignee: SONY CORPORATIONInventor: Hiromi Okazaki
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Patent number: 11271025Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: GrantFiled: March 13, 2020Date of Patent: March 8, 2022Assignee: SONY CORPORATIONInventor: Hiromi Okazaki
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Publication number: 20210217789Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: ApplicationFiled: March 29, 2021Publication date: July 15, 2021Applicant: Sony CorporationInventor: Hiromi Okazaki
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Publication number: 20200212084Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: ApplicationFiled: March 13, 2020Publication date: July 2, 2020Applicant: Sony CorporationInventor: Hiromi Okazaki
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Patent number: 10615207Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: GrantFiled: December 21, 2017Date of Patent: April 7, 2020Assignee: SONY CORPORATIONInventor: Hiromi Okazaki
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Patent number: 10319769Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: GrantFiled: March 30, 2016Date of Patent: June 11, 2019Assignee: Sony CorporationInventor: Hiromi Okazaki
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Patent number: 10074684Abstract: Systems and methods for providing a solid state image sensor (30) are provided. More particularly, an image sensor (30) that suppresses color mixing is provided. Moreover, embodiments of the present disclosure provide for the creation of light blocking features (32) that avoid the creation of stress concentrations. More particularly, embodiments of the present disclosure provide for the creation of light blocking structures (32) using trenches formed in a substrate (44) that are arranged such that no two trenches intersect one another.Type: GrantFiled: May 16, 2013Date of Patent: September 11, 2018Assignee: SONY CORPORATIONInventors: Hiromi Okazaki, Masayuki Uchiyama, Kazufumi Watanabe
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Publication number: 20180138216Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: ApplicationFiled: December 21, 2017Publication date: May 17, 2018Inventor: Hiromi Okazaki
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Patent number: 9893106Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: GrantFiled: March 3, 2017Date of Patent: February 13, 2018Assignee: Sony CorporationInventor: Hiromi Okazaki
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Patent number: 9853077Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: GrantFiled: March 3, 2017Date of Patent: December 26, 2017Assignee: Sony CorporationInventor: Hiromi Okazaki
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Publication number: 20170179171Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: ApplicationFiled: March 3, 2017Publication date: June 22, 2017Inventor: Hiromi Okazaki
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Patent number: 9647026Abstract: A solid-state image pickup device, including: a plurality of pixels; a separation structure provided along a boundary line adjacent to the plurality of pixels; the separation structure includes a groove provided from a back surface of the semiconductor substrate to a depth corresponding to a wavelength, the groove being positioned along the boundary line, a first separation layer provided in the groove, and a second separation layer provided above the first separation layer and corresponding to the boundary line, the second separation layer being connected to the first separation layer; and methods including the same.Type: GrantFiled: August 1, 2014Date of Patent: May 9, 2017Assignee: Sony CorporationInventors: Yoshiki Ebiko, Atsuhiko Yamamoto, Yasushi Tateshita, Hiromi Okazaki
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Patent number: 9570501Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: GrantFiled: May 16, 2014Date of Patent: February 14, 2017Assignee: Sony CorporationInventor: Hiromi Okazaki
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Publication number: 20160211304Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: ApplicationFiled: March 30, 2016Publication date: July 21, 2016Inventor: Hiromi Okazaki
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Publication number: 20150091122Abstract: Systems and methods for providing a solid state image sensor (30) are provided. More particularly, an image sensor (30) that suppresses color mixing is provided. Moreover, embodiments of the present disclosure provide for the creation of light blocking features (32) that avoid the creation of stress concentrations. More particularly, embodiments of the present disclosure provide for the creation of light blocking structures (32) using trenches formed in a substrate (44) that are arranged such that no two trenches intersect one another.Type: ApplicationFiled: May 16, 2013Publication date: April 2, 2015Inventors: Hiromi Okazaki, Masayuki Uchiyama, Kazufumi Watanabe
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Publication number: 20150041942Abstract: A solid-state image pickup device, including: a plurality of pixels; a separation structure provided along a boundary line adjacent to the plurality of pixels; the separation structure includes a groove provided from a back surface of the semiconductor substrate to a depth corresponding to a wavelength, the groove being positioned along the boundary line, a first separation layer provided in the groove, and a second separation layer provided above the first separation layer and corresponding to the boundary line, the second separation layer being connected to the first separation layer; and methods including the same.Type: ApplicationFiled: August 1, 2014Publication date: February 12, 2015Inventors: Yoshiki Ebiko, Atsuhiko Yamamoto, Yasushi Tateshita, Hiromi Okazaki
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Publication number: 20140346628Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.Type: ApplicationFiled: May 16, 2014Publication date: November 27, 2014Applicant: Sony CorporationInventor: Hiromi Okazaki
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Solid-state imaging device, manufacturing method and designing method thereof, and electronic device
Patent number: 8558158Abstract: A solid-state imaging device includes a semiconductor substrate, photodiodes, a first insulating film, a second insulating film, a third insulating film, and a color filter. The photodiodes are disposed on the semiconductor substrate. The first insulating film covers a multilayer wiring on the semiconductor substrate. The first insulating film comprises a material having a first refractive index lower than a refractive index of the semiconductor substrate for at least bottom surface and top surface portions of the first insulating film. The second insulating film has a second refractive index higher than the first refractive index. The third insulating film has a third refractive index higher than the second refractive index.Type: GrantFiled: October 29, 2010Date of Patent: October 15, 2013Assignee: Sony CorporationInventors: Kyoko Izuha, Hiromi Okazaki, Yoshiaki Kitano