Patents by Inventor Hiromi Yagi

Hiromi Yagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7186295
    Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.
    Type: Grant
    Filed: December 5, 2003
    Date of Patent: March 6, 2007
    Assignee: Humo Laboratory, Ltd.
    Inventors: Naoyuki Takahashi, Takato Nakamura, Satoshi Nonaka, Hiromi Yagi, Yoichi Shinriki, Katsumi Tamanuki
  • Patent number: 7057470
    Abstract: A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 ?m or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.
    Type: Grant
    Filed: April 16, 2004
    Date of Patent: June 6, 2006
    Assignee: Humo Laboratory, Ltd.
    Inventors: Naoyuki Takahashi, Takato Nakamura, Satoshi Nonaka, Hiromi Yagi, Yoichi Shinriki, Katsumi Tamanuki
  • Patent number: 6844074
    Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.
    Type: Grant
    Filed: January 23, 2001
    Date of Patent: January 18, 2005
    Assignee: Humo Laboratory, Ltd.
    Inventors: Naoyuki Takahashi, Takato Nakamura, Satoshi Nonaka, Hiromi Yagi, Yoichi Shinriki, Katsumi Tamanuki
  • Publication number: 20040189415
    Abstract: A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 &mgr;m or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.
    Type: Application
    Filed: April 16, 2004
    Publication date: September 30, 2004
    Applicant: Humo Laboratory, Ltd.
    Inventors: Naoyuki Takahashi, Takato Nakamura, Satoshi Nonaka, Hiromi Yagi, Yoichi Shinriki, Katsumi Tamanuki
  • Patent number: 6750728
    Abstract: A quartz oscillator includes a base, a quartz thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the quartz thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a quartz oscillator.
    Type: Grant
    Filed: July 19, 2002
    Date of Patent: June 15, 2004
    Assignee: Humo Laboratory, Ltd.
    Inventors: Naoyuki Takahashi, Takato Nakamura, Satoshi Nonaka, Hiromi Yagi, Yoichi Shinriki, Katsumi Tamanuki
  • Publication number: 20040107895
    Abstract: A single crystal thin film and a production method therefor are provided. A method for producing a crystal epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a crystal on the substrate. The single crystal thin film has excellent crystalinity, and optical properties.
    Type: Application
    Filed: December 5, 2003
    Publication date: June 10, 2004
    Applicant: Humo Laboratory, Ltd.
    Inventors: Naoyuki Takahashi, Takato Nakamura, Satoshi Nonaka, Hiromi Yagi, Yoichi Shinriki, Katsumi Tamanuki
  • Publication number: 20030184397
    Abstract: A crystal oscillator includes a base, a crystal thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the crystal thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a crystal oscillator.
    Type: Application
    Filed: July 19, 2002
    Publication date: October 2, 2003
    Inventors: Naoyuki Takahashi, Takato Nakamura, Satoshi Nonaka, Hiromi Yagi, Yoichi Shinriki, Katsumi Tamanuki
  • Publication number: 20020060319
    Abstract: A single crystal thin film and a production method therefor are provided. A method for producing a crystal epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a crystal on the substrate. The single crystal thin film has excellent crystalinity, and optical properties.
    Type: Application
    Filed: January 23, 2001
    Publication date: May 23, 2002
    Inventors: Naoyuki Takahashi, Takato Nakamura, Satoshi Nonaka, Hiromi Yagi, Yoichi Shinriki, Katsumi Tamanuki