Patents by Inventor Hiromichi INENAGA

Hiromichi INENAGA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power device with carrier lifetime zone
    Patent number: 11145644
    Abstract: A power device includes a substrate including a drift layer and having a first region and a second region, the drift layer having impurities of a first type; a switch formed in the first region; a diode formed in the second region; a metal structure formed over a surface of the substrate, the metal structure having a first thickness over the first region of the substrate and a second thickness over the second region of the substrate, the first thickness and second thickness having at least 3 um in thickness difference; and a zone provided in the drift layer in the second region of the substrate, the zone having impurities of a second type that is different from the first type.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: October 12, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takumi Hosoya, Hiromichi Inenaga, Seiji Miyoshi
  • POWER DEVICE WITH CARRIER LIFETIME ZONE
    Publication number: 20210050344
    Abstract: A power device includes a substrate including a drift layer and having a first region and a second region, the drift layer having impurities of a first type; a switch formed in the first region; a diode formed in the second region; a metal structure formed over a surface of the substrate, the metal structure having a first thickness over the first region of the substrate and a second thickness over the second region of the substrate, the first thickness and second thickness having at least 3 um in thickness difference; and a zone provided in the drift layer in the second region of the substrate, the zone having impurities of a second type that is different from the first type.
    Type: Application
    Filed: October 29, 2019
    Publication date: February 18, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takumi HOSOYA, Hiromichi INENAGA, Seiji MIYOSHI