Abstract: A diamond-coated member includes a basal material such as aluminum nitride, and a diamond thin film coating at least one part of a surface of the basal material, being adhered thereto, and has corrosion-erosion resistance. Adhesion strength between the thin film and the basal material is 15 MPa or more.

Abstract: An object of the invention is to integrate porous ceramics and dense ceramics with an adequately high bonding strength.

Abstract: Ceramic sintered bodies having a different thickness along a predetermined axial direction are manufactured in the following manner. At first, a ceramic formed body to be sintered having different thickness along the predetermined axial direction is accommodated in a hot press apparatus. An upper forming mold and a lower forming mold each having a forming surface corresponding to an upper surface and a lower surface of the ceramic formed body to be sintered are set. A pressure along the predetermined axial direction is applied to the ceramic formed body to be sintered via the upper forming mold and the lower forming mold while heating the ceramic formed body to be sintered to perform a hot press sintering thereof. A thickness of a ceramic sintered body is controlled in such a manner that a maximum thickness in the predetermined direction is not more than two times a minimum thickness in the predetermined direction.

Abstract: A carrier for an electrophotographic developer which has a flowability index F1, represented by formula (1), of 63 to 75 sec/(50·cm3) and a flowability index F2, represented by formula (2), of 30 to 100 Oe·g/cm3:

Abstract: A composite material has a quartz glass phase and a complex compound phase compounded with the quartz glass phase, which is made of one or more compounds selected from a group of silicon carbide, silicon nitride, silicon, titanium nitride and titanium carbide, as a main ingredient. The composite material can be used instead of quartz glass, and can prevent the generations of microcrack, tipping and particles after the mechanical working.

Abstract: A silicon nitride film is first formed on a semiconductor substrate and serves as a polishing stopper film. Then, the silicon nitride film and the semiconductor substrate are etched in a predetermined region to form an isolating trench which partitions an active region. Next, a silicon dioxide film is deposited on the semiconductor substrate so that the isolating trench is filled with the silicon dioxide film. Next, first-stage chemical mechanical polishing (CMP) is performed with a SiO2-contained slurry which can efficiently polish the surface of the silicon dioxide film regardless of level difference. Finally, second-stage CMP is performed with a CeO2-contained slurry ensuring a large polishing selectivity ratio of the silicon dioxide with regard to silicon nitride films.

Abstract: Corrosion-resistive ceramic materials include a ceramic having silicon atom wherein a percentage of respective metal elements other than metal elements constituting sintering agents and silicon atom is not more than 10 weight ppm. The corrosion-resistive ceramic materials show a high corrosion resistance with respect to corrosive substances and suppress particle generation due to an exposure to corrosive substances. Therefore, chippings and cracks do not occur easily during a machining work.

Abstract: A silicon nitride film is first formed on a semiconductor substrate and serves as a polishing stopper film. Then, the silicon nitride film and the semiconductor substrate are etched in a predetermined region to form an isolating trench which partitions an active region. Next, a silicon dioxide film is deposited on the semiconductor substrate so that the isolating trench is filled with the silicon dioxide film. Next, first-stage chemical mechanical polishing (CMP) is performed with a SiO2-contained slurry which can efficiently polish the surface of the silicon dioxide film regardless of level difference. Finally, second-stage CMP is performed with a CeO2-contained slurry ensuring a large polishing selectivity ratio of the silicon dioxide with regard to silicon nitride films.

Abstract: There is disclosed a two-component developing agent for use in an mage formation based on electrophotography, which has high developability even at a high speed printing and good developability in the case of the image formation for a long period of time. The two-component developing agent includes a carrier comprising a magnetic particle and an insulating toner. A surface of the magnetic particle is coated with at least a resin. A mean particle size of the magnetic particle is between 30 and 90 &mgr;m and an aggregation degree of said carrier is between 2 and 15%.

Abstract: Ceramic sintered bodies having a different thickness along a predetermined axial direction are manufactured in the following manner. At first, a ceramic formed body to be sintered having different thickness along the predetermined axial direction is accommodated in a hot press apparatus. An upper forming mold and a lower forming mold each having a forming surface corresponding to an upper surface and a lower surface of the ceramic formed body to be sintered are set. A pressure along the predetermined axial direction is applied to the ceramic formed body to be sintered via the upper forming mold and the lower forming mold while heating the ceramic formed body to be sintered to perform a hot press sintering thereof. A thickness of a ceramic sintered body in such a manner that a maximum thickness in the predetermined direction is not two times larger or more than a minimum thickness in the predetermined direction.

Abstract: There is described a semiconductor device which has an isolation region, the isolation region being polished by means of chemical-and-mechanical polishing, and which prevents occurrence of variations in a finished state of active regions even in a case where a large isolation area is present. An isolation region for separating active regions is formed on a semiconductor wafer. An annular dummy pattern is formed in an inactive region of greater than a predetermined size, so as to surround the isolation region. An isolation region is ensured between the active regions surrounding the inactive region and the dummy pattern.

Abstract: Ceramic sintered bodies having a different thickness along a predetermined axial direction are manufactured in the following manner. At first, a ceramic formed body to be sintered having different thickness along the predetermined axial direction is accommodated in a hot press apparatus. An upper forming mold and a lower forming mold each having a forming surface corresponding to an upper surface and a lower surface of the ceramic formed body to be sintered are set. A pressure along the predetermined axial direction is applied to the ceramic formed body to be sintered via the upper forming mold and the lower forming mold while heating the ceramic formed body to be sintered to perform a hot press sintering thereof. A thickness of a ceramic sintered body in such a manner that a maximum thickness in the predetermined direction is not two times larger or more than a minimum thickness in the predetermined direction.

Abstract: A composite material has a quartz glass phase and a complex compound phase compounded with the quartz glass phase, which is made of one or more compounds selected from a group of silicon carbide, silicon nitride, silicon, titanium nitride and titanium carbide, as a main ingredient. The composite material can be used instead of quartz glass, and can prevent the generations of microcrack, tipping and particles after the mechanical working.

Abstract: An aluminum nitride sintered body has characteristics such that an amount of total metal elements other than aluminum is smaller than 100 ppm, and a volume resistivity at room temperature is greater than 1.0×109 &OHgr;·cm and is smaller than 1.0×1013 &OHgr;·cm. A metal including member has such a construction that a metal member is embedded in the aluminum nitride sintered body mentioned above. An electrostatic chuck is made by the metal including member mentioned above. In the metal including member mentioned above in which the metal member is embedded in the aluminum nitride sintered body mentioned above, a volume resistivity thereof can be controlled without adding a low resistance material in aluminum nitride.

Abstract: An underlaid silicon oxide film (2) and a polycrystalline silicon film (5) are formed in this order on a surface (1S) of a silicon substrate (1). The polycrystalline silicon film (5) and the underlaid silicon oxide (2) are opened by anisotropic etching, to form a trench (21) extending to the inside of the semiconductor substrate (1). A silicon oxide film (11) formed by HDP-CVD is buried in the trench (21). A resist (41) is formed only on a surface of the silicon oxide film (11) in a device isolation region (20). The silicon oxide film (11) in an active region (30) is removed by dry etching with the resist (41) as a mask. After removing the resist (41), only the polycrystalline silicon film (5) is removed by dry etching. The underlaid oxide film (2) is removed by wet etching with hydrofluoric acid. By this method of manufacturing a semiconductor device, the surface of the semiconductor substrate and a trench-type device isolation are flattened effectively at low cost.

Abstract: A carrier for an electrophotographic developer comprising a carrier core coated with a silicone resin containing a quaternary ammonium salt as a catalyst.

Abstract: A carrier for an electrophotographic developer comprising a carrier core coated with a silicone resin containing a crosslinking agent having a phenyl group.

Abstract: A process for producing a bonded article of ceramic bodies comprising steps of: machining the ceramic bodies to be bonded to form machined surfaces with average surface roughnesses (Ra) of not more than 0.2 .mu.m and flatnesses of not more than 0.2 .mu.m; applying solution containing a bonding aid on at least one of the machined surfaces; contacting the machined surfaces with each other to produce an assembly; and subjecting the assembly to a heat treatment to produce the bonded article. The roughnesses and the flatnesses may preferably be not more than 0.1 .mu.m. The bonding aid may preferably be a sintering aid applicable to at least one of the ceramic bodies. The ceramic bodies may preferably be one or more material selected from a group consisting of aluminum nitride and silicon nitride. The bonding aid may preferably be one or more bonding aid selected from a group consisting of a substance of yttrium and a substance of ytterbium.

Abstract: An aluminum nitride sintered body has characteristics such that an amount of total metal elements other than aluminum is smaller than 100 ppm, and a volume resistivity at room temperature is greater than 1.0.times.10.sup.9 .OMEGA..multidot.cm and is smaller than 1.0.times.10.sup.13 .OMEGA..multidot.cm. A metal including member has such a construction that a metal member is embedded in the aluminum nitride sintered body mentioned above. An electrostatic chuck is made by the metal including member mentioned above. In the metal including member mentioned above in which the metal member is embedded in the aluminum nitride sintered body mentioned above, a volume resistivity thereof can be controlled without adding a low resistance material in aluminum nitride.

Abstract: An aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. The aluminum nitride sintered body is produced by sintering a raw material composed of powdery aluminum nitride at a temperature of not less than 1730.degree. C. to not more than 1920.degree. under a pressure of not less than 80 kg/cm.sup.2.