Abstract: An isolator includes a first core, a second core, a nonreciprocal member, and a magnetic body. The first core and the second core extend in a first direction and are positioned side by side with a cladding therebetween in a second direction that intersects the first direction. The nonreciprocal member is in contact with at least a part of the second core while being positioned side by side with the second core in the second direction. In a magnetic field generated by the magnetic body in a portion where the nonreciprocal member is positioned, a component in a third direction perpendicular to the first direction and the second direction is greater than any component other than the component in the third direction.

Abstract: The present invention is aimed to provide a method for producing a polyester with reduced CD content and elution amount, in which even after the production method, a reduction in physical properties of the polyester is small, and furthermore, a polyester having good moldability can be produced, and the present invention is concerned with a method for producing a polyester including an esterification reaction step of allowing an aliphatic diol and an aliphatic dicarboxylic acid to react with each other; a step of pelletizing a polyester obtained through the esterification reaction step; and a contact treatment step of bringing the obtained polyester pellets into contact with a mixed solution containing ethanol and water, wherein the mixed solution contains water in an amount of 10% by mass or more and not more than 99% by mass relative to the whole of the mixed solution.

Abstract: An object of the present invention is to provide a method for efficient continuous production of aliphatic polyester having good quality. The invention relates to a continuous production method of aliphatic polyester, wherein the polyester is obtained through a preparation step of slurry containing aliphatic dicarboxylic acid and aliphatic diol, an esterification reaction step and a polycondensation reaction step, wherein temperature range of the slurry during the preparation step thereof is from the coagulation point of the aliphatic diol to 80° C., and moisture content in the slurry is from 0.01 to 10% by weight.

Abstract: An object of the present invention is to provide a method for efficient continuous production of aliphatic polyester having good quality. The invention relates to a continuous production method of aliphatic polyester, wherein the polyester is obtained through a preparation step of slurry containing aliphatic dicarboxylic acid and aliphatic diol, an esterification reaction step and a polycondensation reaction step, wherein temperature range of the slurry during the preparation step thereof is from the coagulation point of the aliphatic diol to 80° C., and moisture content in the slurry is from 0.01 to 10% by weight.

Abstract: A punching device of the present invention is proposed which can perform positional alignment with high accuracy without generating positional deviation or vibration by shifting a workpiece, and which does not deteriorate the accuracy of determining the position of an image by shifting a photographic device. In this punching device, a CCD camera, which can photograph the position of the die hole upon the lower die and the position of the pattern upon the workpiece which shows the position thereon where punching is to be performed, is fixedly provided at a position removed from the raising and lowering track of the punch plate. Furthermore, a mirror may be provided between the CCD camera and the die hole upon the lower die.

Abstract: A punching device of the present invention is proposed which can perform positional alignment with high accuracy without generating positional deviation or vibration by shifting a workpiece, and which does not deteriorate the accuracy of determining the position of an image by shifting a photographic device. In this punching device, a CCD camera, which can photograph the position of the die hole upon the lower die and the position of the pattern upon the workpiece which shows the position thereon where punching is to be performed, is fixedly provided at a position removed from the raising and lowering track of the punch plate. Furthermore, a mirror may be provided between the CCD camera and the die hole upon the lower die.

Abstract: The present invention relates to a polyamide resin composition comprising 100 parts by weight of a polyamide resin and 0.001 to 2 parts by weight of at least two kinds of fillers having different average particle sizes from each other, an average particle size of a filler having minimum average particle size in said at least two kinds of fillers being 0.001 to 2 &mgr;m, an average particle size of a filler having maximum average particle size in said at least two kinds of fillers being more than 2 &mgr;m and not more than 15 &mgr;m, said at least two kinds of fillers having the following particle size distribution: (a) 20 to 90% by weight of a filler having a particle size of not more than 2 &mgr;m, (b) 0 to 15% by weight of a filler having a particle size of more than 2 &mgr;m and less than 3 &mgr;m, and (c) 10 to 80% by weight of a filler having a particle size of not less than 3 &mgr;m.

Abstract: The present invention relates to a polyamide resin composition comprising 100 parts by weight of a polyamide resin and 0.

Abstract: A charge transferring apparatus comprising, e.g., a buried type charge coupled device in which a pair of transfer electrodes located at the most downstream point of a charge transfer direction is driven by a drive pulse other than that for any other pair of transfer electrodes and a potential well formed at the pair of the transfer electrodes located at the most downstream point is made shallower than that at any other pair of transfer electrodes allowing the output dynamic range of a charge transfer device to be increased for improving the output quality.

Abstract: A protective circuit protects a plurality of protected portions having different withstand voltages and operation voltages of an active portion of a CCD solid state imaging device or the like by protective elements (e.g., transistors). The respective protected portions can be protected in an optimum fashion in response to the withstand voltages and operation voltages thereof. The breakdown voltages of the respective protective transistors are made different in response to the withstand voltages and operation voltages of the protected portions.

Abstract: A solid-state imaging device in which a light-barrier layer is formed on transfer electrodes on top of a vertical pixel isolating region by an insulating film. The light-barrier layer is adapted to overlie the lateral sides of the transfer electrodes and the peripheral region of a photosensor region neighboring on the vertical pixel isolating region. By provision of the light-barrier layer, the light incident on the vertical pixel isolating region is stopped to reduce smear charges which might otherwise be intruded into the vertical charge transfer section.

Abstract: An automotive disc brake assembly comprises a disc rotor made of graphite cast iron with a structure of pearlite, and a brake pad made of organic material. The disc rotor has a first thermal conductivity falling in a range from 0.090 to 0.140 cal/cm.sec..degree.C. The brake pad has second thermal conductivity falling in a range from 0.65 to 3.00 Kcal/mh.degree.C. The second thermal conductivity falls in a range from 0.65 to 0.98 Kcal/mh.degree.C. provided that the second thermal conductivity satisfies the following relationship with the first thermal conductivity:.lambda..sub.R .gtoreq.-0.152.times..lambda..sub.P +0.24where, .lambda..sub.R is first thermal conductivity, and .lambda..sub.P is the second thermal conductivity. The disc brake assembly is successful in improving heat check resistance ability which is substantially influenced by thermal conductivity of the disc rotor and the brake pad.

Abstract: A CCD imager includes a large number of light receiving sections each having in turn a semiconductor surface region of a second conductivity type, a first semiconductor region of a first conductivity type, a semiconductor region of the second conductivity type and a second semiconductor region of the first conductivity type, vertically. The second semiconductor region is formed by a dual structure of the low concentration semiconductor region and the high concentration semiconductor region. The dual structure provides for shuttering at a lower voltage since the potential barrier along the depth of the light receiving section is no longer affected by the amount of the stored charges, while spreading of the depletion layer at the junction is suppressed by the high concentration semiconductor region.