Abstract: The resist film after high-concentration ion implantation has a hard modified layer on the surface thereof, and is difficult to remove in the temperature region as low as about 150 degrees centigrade. This is because the etching rate of the modified layer sharply decreases with a decrease in temperature. The temperature is increased up to about 250 degrees centigrade to perform an ashing treatment in vacuum in order to increase the etching rate of the modified layer. Then, there occurs a popping phenomenon that the inside resist solvent swells and breaks. The residues scattered thereby of the modified layer and the like seize the wafer surface, and also become difficult to remove even in the subsequent cleaning.

Abstract: The resist film after high-concentration ion implantation has a hard modified layer on the surface thereof, and is difficult to remove in the temperature region as low as about 150 degrees centigrade. This is because the etching rate of the modified layer sharply decreases with a decrease in temperature. The temperature is increased up to about 250 degrees centigrade to perform an ashing treatment in vacuum in order to increase the etching rate of the modified layer. Then, there occurs a popping phenomenon that the inside resist solvent swells and breaks. The residues scattered thereby of the modified layer and the like seize the wafer surface, and also become difficult to remove even in the subsequent cleaning.

Abstract: A shielding film having a higher lead content than that of a capacitive insulating film is formed under a lower electrode of a capacitor in a FeRAM memory cell, and another shielding film having a higher lead content than that of the capacitive insulating film is formed on an upper electrode. PZT films to be used as barrier layers are formed in the interlayer insulating films of the FeRAM memory cell. As a result, it is possible to prevent H2 or H2O from entering an upper portion or a lower portion of the capacitor, and lead diffused from the capacitive insulating film can be compensated by lead included in the shielding films, and it is possible to prevent characteristics of the capacitive insulating film from being degraded.

Abstract: This invention provides a technique for preventing film quality of a capacitive insulating film made of a ferroelectric film of a FeRAM memory cell from being degraded and for improving the characteristics of the FeRAM memory cell. A shielding film having a higher lead content than that of a capacitive insulating film is formed under a lower electrode of a capacitor in a FeRAM memory cell, and another shielding film having a higher lead content than that of the capacitive insulating film is formed on an upper electrode. PZT films to be used as barrier layers are formed in the interlayer insulating films the FeRAM memory cell. As a result, it is possible to prevent H2 or H2O from entering an upper portion or a lower portion of the capacitor, and lead diffused from the capacitive insulating film 11a can be compensated by lead included in the shielding films, and it is possible to prevent characteristics of the capacitive insulating film 11a from being degraded.

Abstract: This invention provides a technique for preventing film quality of a capacitive insulating film made of a ferroelectric film of a FeRAM memory cell from being degraded and for improving the characteristics of the FeRAM memory cell.

Abstract: A shielding film having a higher lead content than that of a capacitive insulating film is formed under a lower electrode of a capacitor in a FeRAM memory cell, and another shielding film having a higher lead content than that of the capacitive insulating film is formed on an upper electrode. PZT films to be used as barrier layers are formed in the interlayer insulating films of the FeRAM memory cell. As a result, it is possible to prevent H2 or H2O from entering an upper portion or a lower portion of the capacitor, and lead diffused from the capacitive insulating film can be compensated by lead included in the shielding films, and it is possible to prevent characteristics of the capacitive insulating film from being degraded.

Abstract: This invention provides a technique for preventing film quality of a capacitive insulating film made of a ferroelectric film of a FeRAM memory cell from being degraded and for improving the characteristics of the FeRAM memory cell.