Abstract: A method is described for producing a polyether polymer, in which side reactions are suppressed to increase the thiol group content without adding hydrogen sulfide, and the halogen content is reduced. A method is also described for producing a thiol group-containing polyether polymer by reacting a terminal halogenated polyether polymer and a hydrogen sulfide metal salt by a substitution reaction, in which the substitution reaction is performed in a closed system, the terminal halogenated polyether polymer is charged into a closed system in an amount of 20 vol % or more of a volume of the closed system, and the hydrogen sulfide metal salt is charged into the closed system as an aqueous solution having a concentration of 25 mass % or more.

Abstract: An epoxy resin curable composition cures quickly, has high hardness after curing, and an excellent color tone. An epoxy resin curable composition contains an epoxy resin containing two or more epoxy groups in one molecule, a thiol compound containing two or more thiol groups in one molecule, an amine compound A containing a primary amino group and/or a secondary amino group, and an amine compound B containing a tertiary amino group, in which a molar ratio M1+2/Me is 0.11 to 0.5 and a molar ratio M3/Me is 0.005 to 0.1, in which Me is the number of moles of the epoxy groups contained in the epoxy resin curable composition, M1+2 is the total number of moles of the primary amino group and the secondary amino group, and M3 is the number of moles of the tertiary amino group.

Abstract: A slightly colored or completely colorless epoxy resin composition includes an epoxy resin containing two or more epoxy groups in one molecule, a thiol compound containing two or more thiol groups in one molecule, and an amine compound, that forms a cured product having an a* value of ?15 to 15 and a b* value of ?15 to 15 as chromaticity features according to the color system.

Abstract: The present disclosure provides a workpiece conveyance system that can be configured at a low cost. A first exemplary aspect is a workpiece conveyance system configured to convey a first workpiece inside a facility and raise the first workpiece, the workpiece conveyance system including: an on-floor carriage configured to be movable on a floor of the facility, the on-floor carriage including a placement part on which the first workpiece is placed; and an elevating machine configured to push up the placement part, the elevating machine being configured separately from the on-floor carriage.

Abstract: An integrated control system for an automatic guided vehicle in a vehicle production line includes: a plurality of the automatic guided vehicles each conveying a conveyance object which is a vehicle; a map construction unit that acquires a map of the vehicle production line; a position information acquisition unit that acquires position information of the plurality of the automatic guided vehicles on the map; a production instruction acquisition unit that acquires vehicle information of each of the vehicles conveyed by the plurality of the automatic guided vehicles; and an operation control unit that controls movement of each of the plurality of the automatic guided vehicles on the map based on the position information and the vehicle information.

Abstract: The present disclosure provides a workpiece conveyance system that can be configured at a low cost. A first exemplary aspect is a workpiece conveyance system configured to convey a first workpiece inside a facility and raise the first workpiece, the workpiece conveyance system including: an on-floor carriage configured to be movable on a floor of the facility, the on-floor carriage including a placement part on which the first workpiece is placed; and an elevating machine configured to push up the placement part, the elevating machine being configured separately from the on-floor carriage.

Abstract: A control device is capable of controlling each of a robot having a robot arm, and an imaging portion which is capable of capturing a first reference marker, a second reference marker, and a third reference marker, any one of the imaging portion, the first reference marker, the second reference marker, and the third reference marker is provided in the robot, and a posture of a reference surface parallel to a plane which passes through the first reference marker, the second reference marker, and the third reference marker, is acquired based on a first image in which the first reference marker is captured by the imaging portion, a second image in which the second reference marker is captured by the imaging portion, and a third image which captures the third reference marker by the imaging portion.

Abstract: A control device is capable of controlling each of a robot having a robot arm, and an imaging portion which is capable of capturing a first reference marker, a second reference marker, and a third reference marker, any one of the imaging portion, the first reference marker, the second reference marker, and the third reference marker is provided in the robot, and a posture of a reference surface parallel to a plane which passes through the first reference marker, the second reference marker, and the third reference marker, is acquired based on a first image in which the first reference marker is captured by the imaging portion, a second image in which the second reference marker is captured by the imaging portion, and a third image which captures the third reference marker by the imaging portion.

Abstract: A method of purifying dimethyl sulfoxide economically and at good yield satisfies the specifications of the United States Pharmacopoeia and reduces odor. The method includes distilling a solution having 35 parts by weight or more of water admixed per 100 parts by weight of raw dimethyl sulfoxide.

Abstract: A first metal film is deposited on a bottom and a wall of a recess formed in an insulating film on a semiconductor substrate. A second metal film is filled in the recess on the first metal film. The second metal film is formed from a polycrystalline tungsten film having a crystal plane of a (110) orientation.

Abstract: A first metal film is deposited on a bottom and a wall of a recess formed in an insulating film on a semiconductor substrate. A second metal film is filled in the recess on the first metal film. The second metal film is formed from a polycrystalline tungsten film having a crystal plane of a (110) orientation.

Abstract: When epitaxially growing on an n-type GaAs semiconductor substrate (1), in order, AlGaInP-based semiconductors of an n-type clading layer (3), an active layer, and a p-type cladding layer to provide a doublehetero structure of an overlying light emitting layer forming portion (10), the p-type cladding layer is grown to a carrier concentration of 1×1016 to 5×1016 cm−3. Further, a window laer (6) of a p-type AlGaAs-based compound semiconductor is grown thereon, and a p-side electrode (8) and an n-side electrode (9) are provided. With this structure, the p-type impurity is suppressed to a minimal degree from diffusing into the active layer during growing the semiconductor layers, thereby providing a semiconductor light emitting device that is high in light emitting efficiency and brightness.

Abstract: A semiconductor light-emitting device includes a substrate formed of an AlGaAs-base semiconductor material. A light-emitting layer forming portion of an AlGaInP-base compound semiconductor material is formed on the substrate so as to provide a light emitting layer. On the surface of the light-emitting layer forming portion, an window layer of an AlGaAs-base semiconductor material is provided. An upper electrode is formed on the upper-side layer in electrical connection therewith, while a lower electrode formed on the substrate in electrical connection therewith. The light-emitting layer forming portion is of an overlaid structure formed by a clad layer formed in a first conductivity type on the substrate. An active layer is formed on the clad layer to have a composition with a lower band gap energy than that of the clad layer. A clad layer is formed in a second conductivity type on the active layer to have the same composition as the first-conductivity clad layer.