Abstract: A HUD apparatus that is an AR display apparatus mounted on an on-vehicle system includes: an image selection unit configured to input an image photographed by a camera, select and extract an area of an object from the image; a visibility judgment unit configured to judge visibility of a user with respect to the area of the object on a basis of an index value; an AR image generator unit configured to generate an AR image regarding the object by subjecting the area to image processing for improving the visibility on a basis of the visibility of the area of the object; and an AR display unit configured to superimpose and display the AR image onto a screen. The visibility judgment unit controls whether the AR image is to be displayed or not and content of the image processing to be changed in accordance with the visibility.

Abstract: Provided is an optical semiconductor device including: a wavelength tunable laser element; a beam splitter that splits an outgoing beam of the wavelength tunable laser element into a first light beam and a second light beam parallel to each other, and outputs the first light beam and the second light beam; and an etalon that transmits the first light beam and the second light beam, wherein an optical path length to the first light beam of the etalon is different from an optical path length to the second light beam of the etalon.

Abstract: A method to tune an emission wavelength of a wavelength tunable laser apparatus is disclosed. The laser apparatus implements, in addition to a wavelength tunable laser diode (t-LD) integrating with a semiconductor optical amplifier (SOA), a wavelength monitor including an etalon filter. The current emission wavelength is determined by a ratio of the magnitude of a filtered beam passing the etalon filter to a raw beam not passing the etalon filter. The method first sets the SOA in an absorbing mode to sense stray component disturbing the wavelength monitor, then correct the ratio of the beams by subtracting the contribution from the stray component.

Abstract: A method to tune an emission wavelength of a wavelength tunable laser apparatus is disclosed. The laser apparatus implements, in addition to a wavelength tunable laser diode (t-LD) integrating with a semiconductor optical amplifier (SOA), a wavelength monitor including an etalon filter. The current emission wavelength is determined by a ratio of the magnitude of a filtered beam passing the etalon filter to a raw beam not passing the etalon filter. The method first sets the SOA in an absorbing mode to sense stray component disturbing the wavelength monitor, then correct the ratio of the beams by subtracting the contribution from the stray component.

Abstract: A method to tune an emission wavelength of a wavelength tunable laser apparatus is disclosed. The laser apparatus implements, in addition to a wavelength tunable laser diode (t-LD) integrating with a semiconductor optical amplifier (SOA), a wavelength monitor including an etalon filter. The current emission wavelength is determined by a ratio of the magnitude of a filtered beam passing the etalon filter to a raw beam not passing the etalon filter. The method first sets the SOA in an absorbing mode to sense stray component disturbing the wavelength monitor, then correct the ratio of the beams by subtracting the contribution from the stray component.

Abstract: A method of controlling a wavelength tunable laser to control an oscillation wavelength based on a difference between a detection result of a wavelength by a wavelength detecting unit and a target value, the method includes: acquiring a first drive condition of the wavelength tunable laser to make the wavelength tunable laser oscillate at a first wavelength from a memory; calculating a second drive condition to drive the wavelength tunable laser at a second wavelength by referring to the first drive condition and a wavelength difference between the first wavelength and the second wavelength, the second wavelength differing from the first wavelength; and driving the wavelength tunable laser based on the second drive condition calculated at the calculating of the second drive condition.

Abstract: A method of controlling a wavelength tunable laser to control an oscillation wavelength based on a difference between a detection result of a wavelength by a wavelength detecting unit and a target value, the method includes: acquiring a first drive condition of the wavelength tunable laser to make the wavelength tunable laser oscillate at a first wavelength from a memory; calculating a second drive condition to drive the wavelength tunable laser at a second wavelength by referring to the first drive condition and a wavelength difference between the first wavelength and the second wavelength, the second wavelength differing from the first wavelength; and driving the wavelength tunable laser based on the second drive condition calculated at the calculating of the second drive condition.

Abstract: A method of controlling a wavelength tunable laser to control an oscillation wavelength based on a difference between a detection result of a wavelength by a wavelength detecting unit and a target value, the method includes: acquiring a first drive condition of the wavelength tunable laser to make the wavelength tunable laser oscillate at a first wavelength from a memory; calculating a second drive condition to drive the wavelength tunable laser at a second wavelength by referring to the first drive condition and a wavelength difference between the first wavelength and the second wavelength, the second wavelength differing from the first wavelength; and driving the wavelength tunable laser based on the second drive condition calculated at the calculating of the second drive condition.

Abstract: A method to tune an emission wavelength of a wavelength tunable laser apparatus is disclosed. The laser apparatus implements, in addition to a wavelength tunable laser diode (t-LD) integrating with a semiconductor optical amplifier (SOA), a wavelength monitor including an etalon filter. The current emission wavelength is determined by a ratio of the magnitude of a filtered beam passing the etalon filter to a raw beam not passing the etalon fitter. The method first sets the SOA in an absorbing mode to sense stray component disturbing the wavelength monitor, then correct the ratio of the beams by subtracting the contribution from the stray component.

Abstract: A method of controlling a wavelength tunable laser to control an oscillation wavelength based on a difference between a detection result of a wavelength by a wavelength detecting unit and a target value, the method includes: acquiring a first drive condition of the wavelength tunable laser to make the wavelength tunable laser oscillate at a first wavelength from a memory; calculating a second drive condition to drive the wavelength tunable laser at a second wavelength by referring to the first drive condition and a wavelength difference between the first wavelength and the second wavelength, the second wavelength differing from the first wavelength; and driving the wavelength tunable laser based on the second drive condition calculated at the calculating of the second drive condition.

Abstract: There are provided a carrier substrate, a temperature sensing resistor film formed directly on the carrier substrate, first and second conductive patterns formed on the carrier substrate and connected to both ends of the temperature sensing resistor film respectively, and a semiconductor chip mounting region portion formed on the carrier substrate.

Abstract: An optical semiconductor device includes an element in which a laser diode and an optical modulator are integrated, and a circuit that sets a common node of the laser diode and the optical modulator at a reference potential different from a ground potential and drives the laser diode and the optical modulator in opposite directions with respect to the reference potential.

Abstract: An optical semiconductor device includes an element in which a laser diode and an optical modulator are integrated, and a circuit that sets a common node of the laser diode and the optical modulator at a reference potential different from a ground potential and drives the laser diode and the optical modulator in opposite directions with respect to the reference potential.

Abstract: There are provided a carrier substrate, a temperature sensing resistor film formed directly on the carrier substrate, first and second conductive patterns formed on the carrier substrate and connected to both ends of the temperature sensing resistor film respectively, and a semiconductor chip mounting region portion formed on the carrier substrate.

Abstract: A color cathode-ray tube includes an antireflection layer and a black matrix layer on the inner surface of a face plate thereof. The antireflection layer contains SiO.sub.2 fine particles and is deposited on the inner surface of the face plate without being interposed between the face plate and the black matrix layer.

Abstract: An optical semiconductor device circuit including a MI-DFB-LD capable of minimizing an extension in the wavelength of the output light in order to improve transmission speed and distance. The optical device circuit includes a semiconductor laser diode; an optical modulator for modulating output light of the semiconductor laser diode; a resistive element which is connected to the laser diode and which operates as a resistor at a high frequency; common connection substrate connected to the semiconductor laser diode and to the optical modulator; impedance element or signal reflection element connected to the common connection substrate; and ground connected to the impedance element or the signal reflection element.

Abstract: Disclosed are an ultrafine particle film which is effective for the prevention of an electrostatic charge and reflection and can be applied to a large area at a low cost, a cathode ray tube to which the ultrafine particle film is applied, and image display plate to which the ultrafine particles is applied, and a process for producing the ultrafine particle film which comprises attaching a coating solution bath to a Braun tube surface and the like, introducing a containing solution containing anti-reflection SiO.sub.2 ultrafine particles and antistatic SnO.sub.2 ultrafine particles, and elevating up or down on the Braun tube surface and the like at a constant rate.

Abstract: An ultrafine particle film which has excellent anti-staining properties, is effective for the prevention of electrostatic charge and reflection of visible light and can be applied to a large area at low cost, and an image display plate such as the one adapted to a Braun tube to which the ultrafine particle film is applied, and a process for producing the ultrafine particle film which comprises attaching a coating solution bath 22 to a surface of a Braun tube 21, filling the bath with a coating solution 23 containing antistatic SnO.sub.

Abstract: An ultrafine particle film which is effective for the prevention of electrostatic charge and reflection of visible light and can be applied to a large area at low cost, an image display plate such as the one adapted to a Braun tube to which the ultrafine particle film is applied, and a process for producing the ultrafine particle film which comprises attaching a coating solution bath 22 to a surface of a Braun tube 21, filling the bath with a coating solution 23 containing the antistatic SnO.sub.2 ultrafine particles so that the surface of the Braun tube 21 is covered with the coating solution, and then exposing the coated Braun tube surface at a predetermined rate to form an electrically conductive film on the Braun tube surface, the above process being repeated by using a coating solution containing the visible light anti-reflection ultrafine particles to form a visible light anti-reflection film on the electrically conductive film.

Abstract: There are disclosed an image display panel having an antistatic film comprising a SiO2 coat of transparent and electroconductive properties on the front surface of said panel; the coat containing fine particles of at least one compound selected from electroconductive metal oxides and hygroscopic metal salts; and a process for producing the same.