Abstract: For example, an I/O circuit is formed by freely combining a plurality of kinds of standard cells included in a cell library. The plurality of kinds of standard cells include at least first standard cells and a second standard cell. The first standard cells include first protection elements and a first power line formed in a region over the first protection elements to conduct to the first protection elements. The second standard cell includes a second protection element formed in a layout identical with that of the first protection elements, and a second power line formed in a region over the second protection element to conduct to the second protection element while being isolated from the first power line.

Abstract: A synchronous reset signal is generated from an asynchronous reset signal. The synchronous reset signal is output from the final-stage FF among L FFs connected in a cascade arrangement. A first error determination signal is output from the final-stage FF among M FFs connected in a cascade arrangement. Among N FFs connected in a cascade arrangement, the initial-stage FF receives the first error determination signal, and the final-stage FF outputs a second error determination signal. Based on the three outputs, the presence or absence of a fault in the circuit is determined. L, M, and N fulfil M?2, L?M+1, and M+N?L+1.

Abstract: A synchronous reset signal is generated from an asynchronous reset signal. The synchronous reset signal is output from the final-stage FF among L FFs connected in a cascade arrangement. A first error determination signal is output from the final-stage FF among M FFs connected in a cascade arrangement. Among N FFs connected in a cascade arrangement, the initial-stage FF receives the first error determination signal, and the final-stage FF outputs a second error determination signal. Based on the three outputs, the presence or absence of a fault in the circuit is determined. L, M, and N fulfil M?2, L?M+1, and M+N?L+1.

Abstract: Disclosed is a semiconductor integrated circuit including a logic circuit, and a plurality of scan flip-flop circuits that hold input data or output data of the logic circuit and are capable of forming a scan chain for executing a scan test of the logic circuit. Each scan flip-flop circuit includes a scan data input part that receives input of scan data for the scan test, a normal data input part that receives input of normal data different from the scan data, and a data holding part capable of separately holding the normal data and the scan data.

Abstract: Disclosed is a flip flop circuit including a master latch circuit receiving master input data based on target input data, a slave latch circuit configured to load master output data from the master latch circuit and to hold the master output data, and a data output section, target output data based on the target input data being output from the data output section. The slave latch circuit includes a first to an N-th slave latch circuits provided in parallel with the master latch circuit (N is an integer of 2 or larger), the flip flop circuit further includes an output selection circuit selecting any one of data output from the first to N-th slave latch circuits, and selection data from the output selection circuit is output from the data output section as the target output data.

Abstract: Disclosed is a semiconductor memory device including a memory cell based on a static random access memory having a 6T or 4T2R configuration and including a first internal node, a second internal node, a first ferroelectric capacitor, and a second ferroelectric capacitor, the first ferroelectric capacitor and the second ferroelectric capacitor having respective first ends connected respectively to the first internal node and the second internal node. For recovering data stored in a non-volatile fashion in the first ferroelectric capacitor and the second ferroelectric capacitor, a first access transistor connected between the first internal node and a first bit line and a second access transistor connected between the second internal node and a second bit line are turned on, and respective capacitive components of the first bit line and the second bit line are used as load capacitances.

Abstract: Disclosed is a flip flop circuit including a master latch circuit receiving master input data based on target input data, a slave latch circuit configured to load master output data from the master latch circuit and to hold the master output data, and a data output section, target output data based on the target input data being output from the data output section. The slave latch circuit includes a first to an N-th slave latch circuits provided in parallel with the master latch circuit (N is an integer of 2 or larger), the flip flop circuit further includes an output selection circuit selecting any one of data output from the first to N-th slave latch circuits, and selection data from the output selection circuit is output from the data output section as the target output data.

Abstract: Disclosed is a semiconductor integrated circuit including a logic circuit, and a plurality of scan flip-flop circuits that hold input data or output data of the logic circuit and are capable of forming a scan chain for executing a scan test of the logic circuit. Each scan flip-flop circuit includes a scan data input part that receives input of scan data for the scan test, a normal data input part that receives input of normal data different from the scan data, and a data holding part capable of separately holding the normal data and the scan data.

Abstract: Disclosed is a semiconductor memory device including a memory cell based on a static random access memory having a 6T or 4T2R configuration and including a first internal node, a second internal node, a first ferroelectric capacitor, and a second ferroelectric capacitor, the first ferroelectric capacitor and the second ferroelectric capacitor having respective first ends connected respectively to the first internal node and the second internal node. For recovering data stored in a non-volatile fashion in the first ferroelectric capacitor and the second ferroelectric capacitor, a first access transistor connected between the first internal node and a first bit line and a second access transistor connected between the second internal node and a second bit line are turned on, and respective capacitive components of the first bit line and the second bit line are used as load capacitances.

Abstract: A data processing apparatus includes: a plurality of power supplies; a nonvolatile logic configured to be driven with power output from the plurality of power supplies; and a plurality of detection parts configured to detect output states of the plurality of power supplies, wherein the nonvolatile logic performs data processing based on a result of the detection of the plurality of detection parts.

Abstract: A data holding device 100 has an inverter loop 101, a differential pair circuit 102 connected to the ground terminals of inverters, a first potential setter 103 configured to turn the output terminals of the inverters to a first potential (VDD), and a second potential setter 104 configured to turn the ground terminals of the inverters to a second potential (VSS). During data holding, the differential pair circuit 102 and the first potential setter 103 are disabled so that the ground terminals of the inverters are at the second potential. During data writing, the differential pair circuit 102 is disabled so that the output terminal of one inverter is at the first potential and the ground terminal of the other inverter is at the second potential.

Abstract: Provides is a C-plane GaN substrate which, although formed from a GaN crystal grown so that surface pits are generated, is free from any inversion domain, and moreover, has a low spiral dislocation density in a gallium polar surface. Provides is a C-plane GaN substrate wherein: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on a gallium polar surface; the spiral dislocation density is less than 1×106 cm?2 anywhere on the gallium polar surface; and the substrate is free from any inversion domain. The C-plane GaN substrate may comprise a high dislocation density part having a dislocation density of more than 1×107 cm?2 and a low dislocation density part having a dislocation density of less than 1×106 cm?2 on the gallium polar surface.

Abstract: A C-plane GaN substrate only mildly restricts the shape and dimension of a nitride semiconductor device formed on the substrate. The variation of an off-angle on the main surface of the substrate is suppressed. In the C-plane GaN substrate: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on the main surface; the number density of the facet growth area accompanied by a core among the plurality of facet growth areas is less than 5 cm?2 on the main surface; and, when any circular area of 4 cm diameter is selected from an area which is on the main surface and is distant by 5 mm or more from the outer peripheral edge of the substrate, the variation widths of an a-axis direction component and an m-axis direction component of an off-angle within the circular area is each 0.25 degrees or less.

Abstract: A data holding device 100 has an inverter loop 101, a differential pair circuit 102 connected to the ground terminals of inverters, a first potential setter 103 configured to turn the output terminals of the inverters to a first potential (VDD), and a second potential setter 104 configured to turn the ground terminals of the inverters to a second potential (VSS). During data holding, the differential pair circuit 102 and the first potential setter 103 are disabled so that the ground terminals of the inverters are at the second potential. During data writing, the differential pair circuit 102 is disabled so that the output terminal of one inverter is at the first potential and the ground terminal of the other inverter is at the second potential.

Abstract: For a Periodic Table Group 13 metal nitride semiconductor crystal obtained by epitaxial growth on the main surface of a base substrate that has a nonpolar plane and/or a semipolar plane as its main surface, an object of the present invention is to provide a high-quality semiconductor crystal that has a low absorption coefficient, is favorable for a device, and is controlled dopant concentration in the crystal, and to provide a production method that can produce the semiconductor crystal. A high-quality Periodic Table Group 13 metal nitride semiconductor crystal that has a precisely controlled dopant concentration within the crystal and a low absorption coefficient and that is thus favorable for a device, can be provided by inhibiting oxygen doping caused by impurity oxygen and having the Si concentration higher than the O concentration.

Abstract: A C-plane GaN substrate only mildly restricts the shape and dimension of a nitride semiconductor device formed on the substrate. The variation of an off-angle on the main surface of the substrate is suppressed. In the C-plane GaN substrate: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on the main surface; the number density of the facet growth area accompanied by a core among the plurality of facet growth areas is less than 5 cm?2 on the main surface; and, when any circular area of 4 cm diameter is selected from an area which is on the main surface and is distant by 5 mm or more from the outer peripheral edge of the substrate, the variation widths of an a-axis direction component and an m-axis direction component of an off-angle within the circular area is each 0.25 degrees or less.

Abstract: Provides is a C-plane GaN substrate which, although formed from a GaN crystal grown so that surface pits are generated, is free from any inversion domain, and moreover, has a low spiral dislocation density in a gallium polar surface. Provides is a C-plane GaN substrate wherein: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on a gallium polar surface; the spiral dislocation density is less than 1×106 cm?2 anywhere on the gallium polar surface; and the substrate is free from any inversion domain. The C-plane GaN substrate may comprise a high dislocation density part having a dislocation density of more than 1×107 cm?2 and a low dislocation density part having a dislocation density of less than 1×106 cm?2 on the gallium polar surface.

Abstract: A data retention control circuit includes a data retention part having first and second logic circuits, a ferroelectric storage part having first and second ferroelectric device parts, first and second transmission control parts, and a test voltage supply control part. The first transmission control part has first and second transmission control circuits controlling first and second logic signals to the first and second ferroelectric device parts, respectively. The second transmission control part has third and fourth transmission control circuits controlling transmission of first and second storage data from the first and second ferroelectric device part to the second and first logic circuits, respectively. The test voltage supply control part has first and second test voltage supply control circuits controlling supplies of first and second test voltages to the second and first logic circuit, respectively.

Abstract: A data processing apparatus includes: a plurality of power supplies; a nonvolatile logic configured to be driven with power output from the plurality of power supplies; and a plurality of detection parts configured to detect output states of the plurality of power supplies, wherein the nonvolatile logic performs data processing based on a result of the detection of the plurality of detection parts.

Abstract: A data retention control circuit includes a data retention part having first and second logic circuits, a ferroelectric storage part having first and second ferroelectric device parts, first and second transmission control parts, and a test voltage supply control part. The first transmission control part has first and second transmission control circuits controlling first and second logic signals to the first and second ferroelectric device parts, respectively. The second transmission control part has third and fourth transmission control circuits controlling transmission of first and second storage data from the first and second ferroelectric device part to the second and first logic circuits, respectively. The test voltage supply control part has first and second test voltage supply control circuits controlling supplies of first and second test voltages to the second and first logic circuit, respectively.