Patents by Inventor Hiromitsu Marui

Hiromitsu Marui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NITRIDE SEMICONDUCTOR DEVICE
    Publication number: 20140077157
    Abstract: A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm3, and the resistivity can be lowered below 8×10?3 ?cm.
    Type: Application
    Filed: November 22, 2013
    Publication date: March 20, 2014
    Applicant: Nichia Corporation
    Inventors: Shuji NAKAMURA, Takashi Mukai, Koji Tanizawa, Tomotsugu Mitani, Hiromitsu Marui
  • Nitride semiconductor device
    Patent number: 7947994
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: May 24, 2011
    Assignee: Nichia Corporation
    Inventors: Koji Tanizawa, Tomotsugu Mitani, Yoshinori Nakagawa, Hironori Takagi, Hiromitsu Marui, Yoshikatsu Fukuda, Takeshi Ikegami
  • NITRIDE SEMICONDUCTOR DEVICE
    Publication number: 20080191195
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device.
    Type: Application
    Filed: March 12, 2008
    Publication date: August 14, 2008
    Applicant: NICHIA CORPORATION
    Inventors: Koji TANIZAWA, Tomotsugu MITANI, Yoshinori NAKAGAWA, Hironori TAKAGI, Hiromitsu MARUI, Yoshikatsu FUKUDA, Takeshi IKEGAMI
  • Nitride semiconductor device
    Patent number: 7402838
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: July 22, 2008
    Assignee: Nichia Corporation
    Inventors: Koji Tanizawa, Tomotsugu Mitani, Yoshinori Nakagawa, Hironori Takagi, Hiromitsu Marui, Yoshikatsu Fukuda, Takeshi Ikegami
  • Nitride semiconductor device
    Publication number: 20070063207
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device.
    Type: Application
    Filed: November 16, 2006
    Publication date: March 22, 2007
    Inventors: Koji Tanizawa, Tomotsugu Mitani, Yoshinori Nakagawa, Hironori Takagi, Hiromitsu Marui, Yoshikatsu Fukuda, Takeshi Ikegami
  • Nitride semiconductor device
    Patent number: 7193246
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
    Type: Grant
    Filed: March 10, 1999
    Date of Patent: March 20, 2007
    Assignee: Nichia Corporation
    Inventors: Koji Tanizawa, Tomotsugu Mitani, Yoshinori Nakagawa, Hironori Takagi, Hiromitsu Marui, Yoshikatsu Fukuda, Takeshi Ikegami