Abstract: A suction pressure acquisition unit acquires pressure data indicating pressure of a pump. A variation coefficient calculation unit calculates a variation coefficient indicating amplitude of pressure magnitude of the pump on a basis of the pressure data acquired by the suction pressure acquisition unit. An adjustment unit performs adjustment detection information that includes the variation coefficient calculated by the variation coefficient calculation unit, by using a pressure transmission coefficient representing ease of transmission for pressure of the pump. The detection information is used for cavitation occurrence detection. A determination unit 125 detects cavitation occurrence in the pump on a basis of the detection information adjusted by the adjustment unit.

Abstract: A detection apparatus includes a suction pressure acquirer configured to acquire suction pressure data indicating suction pressure of a pump, and a detector configured to detect occurrence of cavitation in the pump based on a variation coefficient of the suction pressure data during a detection target period.

Abstract: A detection apparatus includes a suction pressure acquirer configured to acquire suction pressure data indicating suction pressure of a pump, and a detector configured to detect occurrence of cavitation in the pump based on a variation coefficient of the suction pressure data during a detection target period.

Abstract: According to the present disclosure, a photoelectric conversion film includes a plurality of semiconductor nanoparticles and a matrix phase provided around each of the plurality of semiconductor nanoparticles. The matrix phase includes a principal phase including a composite, which includes an organic molecule polymer and an inorganic material. A photoelectric conversion device includes a transparent electrically conductive film, a photoelectric conversion layer, a semiconductor substrate, and an electrode layer, which are layered on a glass substrate in this order. The photoelectric conversion layer includes the photoelectric conversion film.

Abstract: According to the present disclosure, a photoelectric conversion film includes a plurality of semiconductor nanoparticles and a matrix phase provided around each of the plurality of semiconductor nanoparticles. The matrix phase includes a principal phase including a composite, which includes an organic molecule polymer and an inorganic material. A photoelectric conversion device includes a transparent electrically conductive film, a photoelectric conversion layer, a semiconductor substrate, and an electrode layer, which are layered on a glass substrate in this order. The photoelectric conversion layer includes the photoelectric conversion film.

Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Abstract: A photoelectric conversion device and a method for producing a photoelectric conversion device are disclosed. The photoelectric conversion device includes a light-absorbing layer. The light-absorbing layer contains a chalcopyrite-based compound, and has a peak intensity ratio IB/IA in a range of 3 to 9, where IA represents a peak intensity of the peak formed by combining a peak of a (220) plane and a peak of a (204) plane in X-ray diffraction, and IB represents a peak intensity of a (112) plane.

Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Abstract: A method for manufacturing a semiconductor layer according to an embodiment of the present invention comprises preparing a first compound, preparing a second compound, making a semiconductor layer forming solution, and forming a semiconductor layer including a group compound by using this semiconductor layer forming solution. The first compound contains a first chalcogen-element-containing organic compound, a first Lewis base, a I-B group element, and a first III-B group element. The second compound contains an organic ligand and a second III-B group element. The semiconductor layer forming solution contains the first compound, the second compound, and an organic solvent.

Abstract: An organic EL display comprises an element substrate, an organic EL element formed on the element substrate, comprising an organic layer including a light emitting layer and a pair of electrode layers disposed on both sides of the organic layer. The organic layer comprises a first organic material. The organic EL display further comprises a capping layer comprising a second organic material having a glass transition point lower than one of the first organic material and a protective layer on the capping layer.

Abstract: An EL device includes a substrate having a square shape, an element-forming region provided on an upper surface of the substrate and having organic light-emitting elements, a protruding section arranged in a region between the element-forming region and an end portion of the substrate, and a protection film deposited in a region extending from the element-forming region to the end portion of the substrate and disposed so as to cover the protruding section. The protruding section is disposed in a substantially strip-like shape along at least two of four sides of the substrate.

Abstract: An organic EL display comprises an element substrate, an organic EL element formed on the element substrate, comprising an organic layer including a light emitting layer and a pair of electrode layers disposed on both sides of the organic layer. The organic layer comprises a first organic material. The organic EL display further comprises a capping layer comprising a second organic material having a glass transition point lower than one of the first organic material and a protective layer on the capping layer.

Abstract: In a power supply device supplying, in parallel, power from a plurality of DC/DC converters to a common load, there is provided an output compensation circuit which is provided on an output side of each of the DC/DC converters and compensates for an output voltage drop due to a voltage drop developing across a diode for parallel operation.