Abstract: A transistor (2) and a matching circuit substrate (3-6) are provided on a base plate (1) and connected to each other. A frame (15) is provided on the base plate (1) and surrounds the transistor (2) and the matching circuit substrate (3-6). The frame (15) has a smaller linear expansion coefficient than that of the base plate (1). A screwing portion (17) is provided in the frame (15). A size of the base plate (1) is smaller than that of the frame (15).

Abstract: A transistor (2) and a matching circuit substrate (3-6) are provided on a base plate (1) and connected to each other. A frame (15) is provided on the base plate (1) and surrounds the transistor (2) and the matching circuit substrate (3-6). The frame (15) has a smaller linear expansion coefficient than that of the base plate (1). A screwing portion (17) is provided in the frame (15). A size of the base plate (1) is smaller than that of the frame (15).

Abstract: A power amplifier includes: an amplifier; an input matching circuit connected to an input of the amplifier; an output matching circuit connected to an output of the amplifier; and a low-frequency processing circuit connected to the input matching circuit or the output matching circuit, wherein the low-frequency processing circuit includes a first line having a first end connected to the input matching circuit or the output matching circuit, a first shot stub connected to a second end of the first line and including a second line and a first capacitor connected in series each other, and a second short stub connected to the second end of the first line in parallel with the first short stub and including a third line and a second capacitor which are connected in series each other, the first line has a length of ?/8, the second line has a length of ?/4, and the third line has a length of ?/8 with respect to a wavelength ? of a fundamental frequency.

Abstract: A power amplifier includes: an amplifier; an input matching circuit connected to an input of the amplifier; an output matching circuit connected to an output of the amplifier; and a low-frequency processing circuit connected to the input matching circuit or the output matching circuit, wherein the low-frequency processing circuit includes a first line having a first end connected to the input matching circuit or the output matching circuit, a first shot stub connected to a second end of the first line and including a second line and a first capacitor connected in series each other, and a second short stub connected to the second end of the first line in parallel with the first short stub and including a third line and a second capacitor which are connected in series each other, the first line has a length of ?/8, the second line has a length of ?/4, and the third line has a length of ?/8 with respect to a wavelength ? of a fundamental frequency.

Abstract: An internal matching transistor comprises: a conductive base material including a groove, a first region, and a second region which is located opposite to the first region across the groove; a transistor bonded onto the first region of the base material; an internal matching circuit bonded onto the second region of the base material; a wire connecting the transistor to the internal matching circuit across above the groove; and a conductive or non-conductive material located between the wire and the groove, wherein capacitance between the wire and the base material is adjusted by the material.

Abstract: A semiconductor package includes a base portion including a first member and a second member which are joined to each other; a semiconductor element mounted on the first member; a terminal mounted on the second member; and a wire electrically connecting the semiconductor element to the terminal. Heat resistance of the first member is lower than heat resistance of the second member, and linear thermal expansion coefficient of the second member is smaller than linear thermal expansion coefficient of the first member.

Abstract: An internal matching transistor comprises: a conductive base material including a groove, a first region, and a second region which is located opposite to the first region across the groove; a transistor bonded onto the first region of the base material; an internal matching circuit bonded onto the second region of the base material; a wire connecting the transistor to the internal matching circuit across above the groove; and a conductive or non-conductive material located between the wire and the groove, wherein capacitance between the wire and the base material is adjusted by the material.

Abstract: An internally matching type transistor includes a semiconductor element and an internally matching circuit, and includes a resonant circuit for short-circuiting differential frequencies of two signals of different frequencies is employed as the internally matching circuit. Thereby, intermodulation distortion characteristics in the internally matching type transistor 1 can be improved. Therefore, complicated operations, such as adjustment by externally connecting a resonant circuit to a semiconductor device, can be eliminated, and the internally matching type transistor 1 of improved intermodulation distortion characteristics can be provided as a stand-alone part.