Patents by Inventor Hironari SASAGAWA
Hironari SASAGAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961746Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.Type: GrantFiled: August 12, 2022Date of Patent: April 16, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Hironari Sasagawa, Maju Tomura, Yoshihide Kihara
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Publication number: 20240120187Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.Type: ApplicationFiled: December 20, 2023Publication date: April 11, 2024Applicant: Tokyo Electron LimitedInventors: Hironari SASAGAWA, Sho KUMAKURA
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Patent number: 11862441Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.Type: GrantFiled: May 26, 2021Date of Patent: January 2, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Hironari Sasagawa, Sho Kumakura
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Publication number: 20230369032Abstract: An etching processing apparatus includes a storage that stores a learned model of each group generated by each learning processing in a case where each processing condition acquired during execution of a specific step of an etching processing, is classified into a plurality of groups according to a difference in effects when executing the specific step, and the learning processing is performed for each group; an updating unit that updates the learned model of a specific group when an effect of executing the specific step on a test wafer using setting data included in a processing condition associated with the specific group is not equivalent to an effect associated with the specific group; and a searching unit that searches for, using the updated learned model, setting data capable of obtaining the effect associated with the specific group when the specific step is executed on the test wafer.Type: ApplicationFiled: May 10, 2023Publication date: November 16, 2023Applicant: Tokyo Electron LimitedInventors: Ryo IGOSAWA, Hironari SASAGAWA
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Patent number: 11810791Abstract: An etching method includes forming a film on a surface of a substrate. The substrate has a region at least partially made of silicon oxide and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The film is formed to correct a shape of a side wall defining the opening to a vertical shape. The etching method further includes etching the region.Type: GrantFiled: January 28, 2021Date of Patent: November 7, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Hironari Sasagawa, Maju Tomura
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Patent number: 11728166Abstract: Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.Type: GrantFiled: February 27, 2020Date of Patent: August 15, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Maju Tomura, Yoshihide Kihara, Hironari Sasagawa
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Publication number: 20220399212Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.Type: ApplicationFiled: August 12, 2022Publication date: December 15, 2022Applicant: Tokyo Electron LimitedInventors: Sho KUMAKURA, Hironari SASAGAWA, Maju TOMURA, Yoshihide KIHARA
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Publication number: 20220301881Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Applicant: Tokyo Electron LimitedInventors: Maju TOMURA, Sho KUMAKURA, Hironari SASAGAWA, Yoshihide KIHARA
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Patent number: 11450537Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.Type: GrantFiled: February 28, 2020Date of Patent: September 20, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Hironari Sasagawa, Maju Tomura, Yoshihide Kihara
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Patent number: 11380555Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.Type: GrantFiled: November 20, 2020Date of Patent: July 5, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Maju Tomura, Sho Kumakura, Hironari Sasagawa, Yoshihide Kihara
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Publication number: 20210375602Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.Type: ApplicationFiled: May 26, 2021Publication date: December 2, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Hironari SASAGAWA, Sho KUMAKURA
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Publication number: 20210233777Abstract: An etching method includes forming a film on a surface of a substrate. The substrate has a region at least partially made of silicon oxide and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The film is formed to correct a shape of a side wall defining the opening to a vertical shape. The etching method further includes etching the region.Type: ApplicationFiled: January 28, 2021Publication date: July 29, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Hironari SASAGAWA, Maju TOMURA
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Publication number: 20210233778Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.Type: ApplicationFiled: January 28, 2021Publication date: July 29, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Maju TOMURA, Tomohiko NIIZEKI, Takayuki KATSUNUMA, Hironari SASAGAWA, Yuta NAKANE, Shinya ISHIKAWA, Kenta ONO, Sho KUMAKURA, Yusuke TAKINO, Masanobu HONDA
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Publication number: 20210159084Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.Type: ApplicationFiled: November 20, 2020Publication date: May 27, 2021Applicant: Tokyo Electron LimitedInventors: Maju Tomura, Sho Kumakura, Hironari Sasagawa, Yoshihide Kihara
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Patent number: 10916420Abstract: A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.Type: GrantFiled: August 29, 2019Date of Patent: February 9, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu, Maju Tomura, Sho Kumakura, Hironari Sasagawa
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Publication number: 20200279757Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.Type: ApplicationFiled: February 28, 2020Publication date: September 3, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Sho KUMAKURA, Hironari SASAGAWA, Maju TOMURA, Yoshihide KIHARA
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Publication number: 20200279733Abstract: Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.Type: ApplicationFiled: February 27, 2020Publication date: September 3, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Sho KUMAKURA, Maju TOMURA, Yoshihide KIHARA, Hironari SASAGAWA