Patents by Inventor Hironari Urabe

Hironari Urabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Al-Ni-B alloy material for reflective film
    Patent number: 8003218
    Abstract: With respect to a reflection-type display device, an Al-based alloy material for a reflective film, which has excellent reflective characteristics and can be directly bonded to a transparent electrode layer such as ITO and IZO is provided. The present invention is Al—Ni—B alloy material for a reflective film, comprising aluminum containing nickel and boron, wherein a nickel content is 1.5-4 at %, a boron content is 0.1-0.5 at %, and the balance is aluminum. It is more preferable if the nickel content is 1.5-3 at %, and the boron content is 0.1-0.4 at %.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: August 23, 2011
    Assignee: Mitsui Mining & Smelting Co., Ltd
    Inventors: Yoshinori Matsuura, Ryoma Tsukuda, Hironari Urabe, Takashi Kubota
  • Al-Ni-based alloy wiring material and element structure using the same
    Patent number: 7755198
    Abstract: The present invention provides Al—Ni-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding to the semiconductor layer, such as n+-Si.
    Type: Grant
    Filed: September 7, 2007
    Date of Patent: July 13, 2010
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Hironari Urabe, Yoshinori Matsurra, Takashi Kubota
  • Al-Ni-B ALLOY MATERIAL FOR REFLECTIVE FILM
    Publication number: 20090230416
    Abstract: With respect to a reflection-type display device, an Al-based alloy material for a reflective film, which has excellent reflective characteristics and can be directly bonded to a transparent electrode layer such as ITO and IZO is provided. The present invention is Al—Ni—B alloy material for a reflective film, comprising aluminum containing nickel and boron, wherein a nickel content is 1.5-4 at %, a boron content is 0.1-0.5 at %, and the balance is aluminum. It is more preferable if the nickel content is 1.5-3 at %, and the boron content is 0.1-0.4 at %.
    Type: Application
    Filed: August 30, 2007
    Publication date: September 17, 2009
    Inventors: Yoshinori Matsuura, Ryoma Tsukuda, Hironari Urabe, Takashi Kubota
  • Al-Ni-B alloy wiring material and element structure using the same
    Patent number: 7531904
    Abstract: The present invention provides Al-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding to the semiconductor layer, such as n+-Si. The Al—Ni—B alloy wiring material according to the present invention is configured such that the nickel content X at %, the nickel atomic percent, and the boron content Y at %, the boron atomic percent, satisfy the following equations: 0.5?X?10.0, 0.05?Y?11.0, Y+0.25X?1.0 and Y+1.15X?11.5, and the remainder is aluminum.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: May 12, 2009
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Hironari Urabe, Yoshinori Matsuura, Takashi Kubota
  • Al-Ni-BASED ALLOY WIRING MATERIAL AND ELEMENT STRUCTURE USING THE SAME
    Publication number: 20080073793
    Abstract: The present invention provides Al—Ni-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding to the semiconductor layer, such as n+-Si.
    Type: Application
    Filed: September 7, 2007
    Publication date: March 27, 2008
    Inventors: Hironari Urabe, Yoshinori Matsurra, Takashi Kubota
  • Al-Ni-B Alloy Wiring Material and Element Structure Using the Same
    Publication number: 20080001153
    Abstract: The present invention provides Al-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding to the semiconductor layer, such as n+-Si. The Al—Ni—B alloy wiring material according to the present invention is configured such that the nickel content X at %, the nickel atomic percent, and the boron content Y at %, the boron atomic percent, satisfy the following equations: 0.5?X?10.0, 0.05?Y?11.0, Y+0.25X?1.0 and Y+1.15X?11.5, and the remainder is aluminum.
    Type: Application
    Filed: March 30, 2006
    Publication date: January 3, 2008
    Inventors: Hironari Urabe, Yoshinori Matsuura, Takashi Kubota