Patents by Inventor Hironaru Yamaguchi
Hironaru Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100167431Abstract: A laser processing apparatus which achieves both shorter TAT and reduction in processing defects. In the apparatus, a laser radiation section, an undulation measurement section for measuring undulation of a substrate or a film thickness measuring section for measuring the thickness of a thin film formed on the substrate, and an optical inspection section for optically inspecting grooves formed by laser-processing the thin film on the substrate are fixed so that their positional relationship is kept constant.Type: ApplicationFiled: October 1, 2009Publication date: July 1, 2010Inventors: Hironaru YAMAGUCHI, Mikio Hongo, Mitsuyoshi Koizumi, Masaki Araki
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Patent number: 7232716Abstract: The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.Type: GrantFiled: July 15, 2004Date of Patent: June 19, 2007Assignee: Hitachi Displays, Ltd.Inventors: Hironaru Yamaguchi, Kiyoshi Ogata, Takuo Tamura, Jun Gotoh, Masakazu Saito, Kazuo Takeda
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Patent number: 7227186Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.Type: GrantFiled: May 4, 2005Date of Patent: June 5, 2007Assignee: Hitachi, Ltd.Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Kazuhiko Horikoshi, Hironaru Yamaguchi, Makoto Ohkura, Hironobu Abe, Masakazu Saitou, Yoshinobu Kimura, Toshihiko Itoga
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Publication number: 20050202612Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.Type: ApplicationFiled: May 4, 2005Publication date: September 15, 2005Applicant: Hitachi, Ltd.Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Kazuhiko Horikoshi, Hironaru Yamaguchi, Makoto Ohkura, Hironobu Abe, Masakazu Saitou, Yoshinobu Kimura, Toshihiko Itoga
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Publication number: 20050142701Abstract: The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system.Type: ApplicationFiled: July 15, 2004Publication date: June 30, 2005Inventors: Hironaru Yamaguchi, Kiyoshi Ogata, Takuo Tamura, Jun Gotoh, Masakazu Saito, Kazuo Takeda
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Patent number: 6903371Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.Type: GrantFiled: February 6, 2004Date of Patent: June 7, 2005Assignee: Hitachi, Ltd.Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Kazuhiko Horikoshi, Hironaru Yamaguchi, Makoto Ohkura, Hironobu Abe, Masakazu Saitou, Yoshinobu Kimura, Toshihiko Itoga
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Publication number: 20040155295Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.Type: ApplicationFiled: February 6, 2004Publication date: August 12, 2004Applicant: Hitachi, Ltd.Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Kazuhiko Horikoshi, Hironaru Yamaguchi, Makoto Ohkura, Hironobu Abe, Masakazu Saitou, Yoshinobu Kimura, Toshihiko Itoga
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Patent number: 6762422Abstract: On a sample base 1 disposed within a vacuum container is provided a scale S(1). . . S(N), where in an actual distance of the sample base is monitored by observing the scale trough an optical system for exclusive use thereof, which can catch it within a field of view. With this, it is possible to position a foreign body, as a target of analysis, which is analyzed or observed by a first analysis/observation device, so that it necessarily falls within a field of view of a second analysis/observation device, thereby realizing quick and automatic delivery of the samples when observing the foreign body on the sample by plural numbers of the devices.Type: GrantFiled: September 24, 2002Date of Patent: July 13, 2004Assignee: Hitachi, Ltd.Inventors: Hironaru Yamaguchi, Hidefumi Ibe, Naoki Yamagami
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Patent number: 6716688Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.Type: GrantFiled: November 18, 2002Date of Patent: April 6, 2004Assignee: Hitachi, Ltd.Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Kazuhiko Horikoshi, Hironaru Yamaguchi, Makoto Ohkura, Hironobu Abe, Masakazu Saitou, Yoshinobu Kimura, Toshihiko Itoga
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Patent number: 6670638Abstract: Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H2O2 solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.Type: GrantFiled: February 28, 2001Date of Patent: December 30, 2003Assignee: Hitachi, Ltd.Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Hironaru Yamaguchi, Yoshinobu Kimura, Makoto Ohkura, Hironobu Abe, Shigeo Shimomura, Masakazu Saitou, Michiko Takahashi
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Patent number: 6657227Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.Type: GrantFiled: July 19, 2001Date of Patent: December 2, 2003Assignee: Hitachi, Ltd.Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Kazuhiko Horikoshi, Hironaru Yamaguchi, Makoto Ohkura, Hironobu Abe, Masakazu Saitou, Yoshinobu Kimura, Toshihiko Itoga
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Publication number: 20030116720Abstract: On a sample base 1 disposed within a vacuum container is provided a scale S(1) . . . S(N), where in an actual distance of the sample base is monitored by observing the scale trough an optical system for exclusive use thereof, which can catch it within a field of view.Type: ApplicationFiled: September 24, 2002Publication date: June 26, 2003Inventors: Hironaru Yamaguchi, Hidefumi Ibe, Naoki Yamagami
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Publication number: 20030094658Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.Type: ApplicationFiled: November 18, 2002Publication date: May 22, 2003Applicant: Hitachi, Ltd.Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Kazuhiko Horikoshi, Hironaru Yamaguchi, Makoto Ohkura, Hironobu Abe, Masakazu Saitou, Yoshinobu Kimura, Toshihiko Itoga
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Publication number: 20020066931Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.Type: ApplicationFiled: July 19, 2001Publication date: June 6, 2002Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Kazuhiko Horikoshi, Hironaru Yamaguchi, Makoto Ohkura, Hironobu Abe, Masakazu Saitou, Yoshinobu Kimura, Toshihiko Itoga
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Publication number: 20020036289Abstract: Disclosed is a polysilicon film having high crystal orientation, low in nonuniformity in the crystal grain sizes, having the surface protrusion suppressed and, thus, adapted for use in a liquid crystal display. For manufacturing such an excellent polysilicon film, a native oxide layer formed on a surface of the amorphous silicon film is completely removed by using a hydrofluoric acid solution, followed by immersing the amorphous silicon film in an H2O2 solution for a short time so as to newly form an extremely thin oxide layer on the surface of the amorphous silicon film, prior to a crystallizing processing performed by a laser beam irradiation.Type: ApplicationFiled: February 28, 2001Publication date: March 28, 2002Inventors: Takuo Tamura, Kiyoshi Ogata, Yoichi Takahara, Hironaru Yamaguchi, Yoshinobu Kimura