Abstract: [Problem] A scroll compressor is provided which has improved workability when a back pressure chamber and a compression chamber are communicated with each other. [Solution] A scroll compressor 1 includes a back pressure chamber 39 formed in a back surface of a mirror plate 31 of a movable scroll 22 in the scroll compressor 1, and a communication hole 51 which is formed in the mirror plate 31 of the movable scroll 22 and communicates the back pressure chamber 39 and a compression chamber 34 with each other. The communication hole 51 is constituted of a large-diameter hole section 52 located on the back pressure chamber 33 side of the mirror plate 31 of the movable scroll 22, and a small-diameter hole section 53 which continues from the large-diameter hole section 52 to reach the compression chamber 34.

Abstract: To make validity of a prediction model created by machine learning be able to be verified with appropriate accuracy and efficiency. A software test apparatus includes a storage device configured to store a prediction model, and an arithmetic device. The arithmetic device is configured to accept inputs of a precondition, a constraint condition, and an approximation threshold value, convert the prediction model into a logical expression, analyze an approximation range based on the approximation threshold value with respect to the logical expression to simplify the logical expression, generate an inspection expression by combining the simplified logical expression with the precondition and negation of the constraint condition, search for, as a counterexample, a value satisfying the inspection expression, input the value to the prediction model to evaluate inspection accuracy when the counterexample exists, and output a result of the evaluation.

Abstract: According to one or more embodiments, a method for manufacturing a semiconductor device includes alternately stacking a first film and a second film on an object to form a multilayer film, then forming a stacked body and a recess by partially removing the multilayer film. A dielectric layer is then formed by applying a composite material to the recess to fill the recess with the dielectric layer. The composite material includes an inorganic material and an organic material. The dielectric layer is then exposed to an oxidizing gas to oxidize the inorganic material and to remove at least part of the organic material from the dielectric layer.

Abstract: In one embodiment, a guide layout creating apparatus includes a selection module that selects a first point as a point on which a guide to array a plurality of particles in a first array is arranged. The apparatus further includes a calculation module that calculates first free energy when the plurality of particles are arrayed in the first array by the guide arranged on the first point, and second free energy when the plurality of particles are arrayed in a second array by the guide arranged on the first point, a type of the second array being different from a type of the first array. The apparatus further includes a determination module that determines whether the first point is employed as the point on which the guide is arranged on the basis of the first free energy and the second free energy.

Abstract: A method for forming an etching mask includes forming a mask layer containing an organic material on a layer to be patterned using the etching mask in a subsequent etching process, processing the mask layer to form a pattern including an opening, forming a filling layer in the opening, impregnating the mask layer with a metal material, and removing the filling layer. The organic material in the mask layer includes reaction sites that react with the metal material, and the filling layer has fewer the reaction sites per the unit volume than the mask layer.

Abstract: According to one or more embodiments, a method for manufacturing a semiconductor device includes alternately stacking a first film and a second film on an object to form a multilayer film, then forming a stacked body and a recess by partially removing the multilayer film. A dielectric layer is then formed by applying a composite material to the recess to fill the recess with the dielectric layer. The composite material includes an inorganic material and an organic material. The dielectric layer is then exposed to an oxidizing gas to oxidize the inorganic material and to remove at least part of the organic material from the dielectric layer.

Abstract: According to one embodiment, a pattern forming method includes: forming a first mask layer on a sample; forming a second mask layer on the first mask layer, the second mask layer containing a first inorganic material and a first organic material; forming a pattern in the second mask layer; oxidizing the first inorganic material and removing at least a portion of the first organic material from the second mask layer by exposing the second mask layer to a first oxidizing gas containing ozone; and transferring the pattern to the first mask layer by etching the first mask layer with the second mask layer.

Abstract: The present invention relates to a chemically strengthened glass with a film, including: a chemically strengthened glass having a pair of main surfaces opposing each other; and a film formed on at least one of the main surfaces of the chemically strengthened glass, in which the chemically strengthened glass has two or less interference fringes observed under stress measurement utilizing surface propagation light having a wavelength of 365 nm, and the film has a refractive index lower than a refractive index of the chemically strengthened glass.

Abstract: According to one or more embodiments, a method for forming an etching mask includes forming a mask layer including a first organic material on a processing object, processing the mask layer to form a pattern including an opening, exposing the mask layer to a first oxidizing gas containing a first metal material such that the first metal material penetrates into the mask layer, and then exposing the mask layer to a first oxidizing gas including hydrogen peroxide or ozone to oxidize the first metal material.

Abstract: In one embodiment, a guide layout creating apparatus includes a selection module that selects a first point as a point on which a guide to array a plurality of particles in a first array is arranged. The apparatus further includes a calculation module that calculates first free energy when the plurality of particles are arrayed in the first array by the guide arranged on the first point, and second free energy when the plurality of particles are arrayed in a second array by the guide arranged on the first point, a type of the second array being different from a type of the first array. The apparatus further includes a determination module that determines whether the first point is employed as the point on which the guide is arranged on the basis of the first free energy and the second free energy.

Abstract: In one embodiment, a guide layout creating apparatus includes a selection module that selects a first point as a point on which a guide to array a plurality of particles in a first array is arranged. The apparatus further includes a calculation module that calculates first free energy when the plurality of particles are arrayed in the first array by the guide arranged on the first point, and second free energy when the plurality of particles are arrayed in a second array by the guide arranged on the first point, a type of the second array being different from a type of the first array. The apparatus further includes a determination module that determines whether the first point is employed as the point on which the guide is arranged on the basis of the first free energy and the second free energy.

Abstract: A method for forming an etching mask includes forming a mask layer containing an organic material on a layer to be patterned using the etching mask in a subsequent etching process, processing the mask layer to form a pattern including an opening, forming a filling layer in the opening, impregnating the mask layer with a metal material, and removing the filling layer. The organic material in the mask layer includes reaction sites that react with the metal material, and the filling layer has fewer the reaction sites per the unit volume than the mask layer.

Abstract: According to one or more embodiments, a method for forming an etching mask includes forming a mask layer including a first organic material on a processing object, processing the mask layer to form a pattern including an opening, exposing the mask layer to a first oxidizing gas containing a first metal material such that the first metal material penetrates into the mask layer, and then exposing the mask layer to a first oxidizing gas including hydrogen peroxide or ozone to oxidize the first metal material.

Abstract: In one embodiment, a guide layout creating apparatus includes a selection module that selects a first point as a point on which a guide to array a plurality of particles in a first array is arranged. The apparatus further includes a calculation module that calculates first free energy when the plurality of particles are arrayed in the first array by the guide arranged on the first point, and second free energy when the plurality of particles are arrayed in a second array by the guide arranged on the first point, a type of the second array being different from a type of the first array. The apparatus further includes a determination module that determines whether the first point is employed as the point on which the guide is arranged on the basis of the first free energy and the second free energy.

Abstract: According to one embodiment, a method of forming a pattern includes applying a polymer material having a first segment and a second segment in openings formed in a guide, heating the polymer material to achieve microphase separation of the polymer material to form a self-assembled pattern which includes a first polymer portion having a cylindrical shape which includes the first segment, and a second polymer portion including the second segment and surrounding a lateral portion of the first polymer portion, and selectively removing the first polymer portion. A molecular weight ratio of the first segment to the second segment in the polymer material is approximately 4:6.

Abstract: An opening-closing device for an opening in a vehicle includes an opening-closing body for opening and closing an opening formed in a vehicle body, a hinge arm for supporting the opening-closing body in a swingable manner on the vehicle body, and a torsion bar for pressing the hinge arm in the direction in which the opening-closing body is opened. The device includes a slide rail section provided on the surface of the hinge arm, and a slider capable of sliding in the longitudinal direction of the hinge arm by being guided by the slide rail section. The slider is held in a state in which the slider is always in contact with the slide rail section in the direction in which the torsion bar presses. The torsion bar is connected to the slider.

Abstract: An opening-closing device for an opening in a vehicle includes an opening-closing body for opening and closing an opening formed in a vehicle body, a hinge arm for supporting the opening-closing body in a swingable manner on the vehicle body, and a torsion bar for pressing the hinge arm in the direction in which the opening-closing body is opened. The device includes a slide rail section provided on the surface of the hinge arm, and a slider capable of sliding in the longitudinal direction of the hinge arm by being guided by the slide rail section. The slider is held in a state in which the slider is always in contact with the slide rail section in the direction in which the torsion bar presses. The torsion bar is connected to the slider.

Abstract: According to one embodiment, a pattern formation method includes: forming a cyclic pattern having first strips of a first polymer component and second strips of a second polymer component by forming chemical guides having affinity for the first polymer component on a substrate to be processed and coating a directed self-assembly material comprising the first polymer component and the second polymer component on the substrate to be processed. In this pattern formation method, the chemical guides comprise a plurality of regions arrayed in matrix with a predetermined interval on the substrate to be processed; each of the regions has a symmetrical shape with respect to a centerline of the region, the centerline extends in the first direction; and a width along the first direction of the region is narrowed from the centerline toward each of end parts of the region.

Abstract: According to one embodiment, a method of forming a pattern includes applying a polymer material having a first segment and a second segment in openings formed in a guide, heating the polymer material to achieve microphase separation of the polymer material to form a self-assembled pattern which includes a first polymer portion having a cylindrical shape which includes the first segment, and a second polymer portion including the second segment and surrounding a lateral portion of the first polymer portion, and selectively removing the first polymer portion. A molecular weight ratio of the first segment to the second segment in the polymer material is approximately 4:6.

Abstract: According to one embodiment, a pattern forming method includes forming a self-assembled material on a plurality of first patterns, forming a plurality of second patterns by heating the self-assembled material and causing microphase separation of the self-assembled material, the second patterns corresponding to the first patterns, and calculating positional deviations of respective positions of the second patterns from positions of the corresponding first patterns. When at least one of the positional deviations is larger than a predetermined value, the self-assembled material is adjusted.