Abstract: A magnetic memory element (10) includes a reference layer (11) of which a magnetization direction is fixed, a tunnel barrier layer (12) provided on the reference layer (11), a magnetic storage layer (13) that is provided on the tunnel barrier layer (12) and of which a magnetization direction is changeable, a high Hk application layer (14) that is provided on the magnetic storage layer (13) and improves magnetic anisotropy of the magnetic storage layer (13), and a Cap layer (15) provided on the high Hk application layer (14), and a material of the high Hk application layer (14) is different from a material of the Cap layer (15), and the material of the high Hk application layer (14) is a high melting point metal.

Abstract: Provided is a magnetic tunnel junction element including: a magnetization pinned layer having a fixed magnetization direction; a first insulating layer which is provided on the magnetization pinned layer and is formed of an insulating material; a magnetization free layer provided on the first insulating layer; an adjacent layer which is provided adjacent to the magnetization free layer and is formed of a non-magnetic transition metal; and a cap layer which is formed to have a multilayer structure including at least one barrier layer formed of a non-magnetic transition metal and is provided on the adjacent layer.

Abstract: An information processing device 10 includes an image interface 19, a sensor interface 20, and a controller 21. The image interface 19 is configured to acquire a captured image from an imaging device. The sensor interface 20 is configured to acquire a distance distribution from a distance measurement sensor. The distance measurement sensor has a detection range that overlaps at least partially with the imaging range of the imaging device. The distance measurement sensor is configured to measure a distance distribution by receiving a reflected wave of a projected wave at an object. The distance distribution includes distance values to a reflection point in each of a plurality of directions. The controller 21 is configured to detect a target, namely a subject image, from the captured image. The controller 21 is configured to calculate the position of a subject in the width direction on the basis of the captured image and the distance distribution. The subject corresponds to the subject image.

Abstract: An image sensor according to the present technology includes: a semiconductor substrate in which a plurality of pixels each having a photoelectric conversion element is two-dimensionally arranged; and a magnetic detection unit configured to detect a magnetic change according to a change in a relative position with respect to an imaging lens that guides light from a subject to the pixels.

Abstract: A variable-resistance nonvolatile memory element 11 of the present disclosure has a stack 30 including at least a magnetization fixed layer 31, an intermediate layer 32, and a storage layer 33, and a nonmagnetic material 36 is dispersed in at least one of the magnetization fixed layer 31 and the storage layer 33.

Abstract: An image processing device 10 includes an image interface 18, a memory 19, and a controller 20. The image interface 18 acquires a captured image. The positions of specific feature points in a world coordinate system and reference positions of the specific feature points are stored in the memory 19. The controller 20 detects the specific feature points in the captured image. In a case where discrepancy between the position in the captured image and the reference position is found with regard to a predetermined percentage or more of the specific feature points, the controller 20 recalculates a calibration parameter.

Abstract: Provided is a magnetic tunnel junction element including: a magnetization pinned layer having a fixed magnetization direction; a first insulating layer which is provided on the magnetization pinned layer and is formed of an insulating material; a magnetization free layer provided on the first insulating layer; an adjacent layer which is provided adjacent to the magnetization free layer and is formed of a non-magnetic transition metal; and a cap layer which is formed to have a multilayer structure including at least one barrier layer formed of a non-magnetic transition metal and is provided on the adjacent layer.

Abstract: The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW1 on the side of a magnetization fixed layer MFX1. A magnetic wall MW2 is moved to the magnetic wall MW1 side by causing current to flow from the formed side of the magnetic wall MW1. Thus, an electrical resistance RMTJ between a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.

Abstract: A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

Abstract: The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW1 on the side of a magnetization fixed layer MFX1. A magnetic wall MW2 is moved to the magnetic wall MW1 side by causing current to flow from the formed side of the magnetic wall MW1. Thus, an electrical resistance RMTJ between a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.

Abstract: A multiservice is implemented by connecting one base station and one terminal via one wireless link. There is provided communication control means 2-1 that performs communication in compliance with an OFDMA scheme having traffic channels including first sub-channels for containing information showing enabled or disabled sub-channels and second sub-channels for storing data pertaining to services in correspondence with the first sub-channels, that allocates a plurality of first sub-channels to a plurality of services, respectively, and that connects one base station to one terminal via one wireless link, thereby establishing communication pertaining to the plurality of services.

Abstract: A magnetic memory includes a magnetic memory, including a ferromagnetic underlayer including a magnetic material, a non-magnetic intermediate layer disposed on the underlayer, a ferromagnetic data recording layer formed on the intermediate layer and having a perpendicular magnetic anisotropy, a reference layer connected to the data recording layer across a non-magnetic layer, and first and second magnetization fixed layers disposed in contact with a bottom face of the underlayer. The data recording layer includes a magnetization free region having a reversible magnetization and opposed to the reference layer, a first magnetization fixed region coupled to a first border of the magnetization free layer and having a magnetization fixed in a first direction, and a second magnetization fixed region coupled to a second border of the magnetization free layer and having a magnetization fixed in a second direction opposite to the first direction.

Abstract: A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.

Abstract: A mobile station device configured to communicate with a base station device by a time division duplex (TDD) scheme, and to transmit retransmission data to the base station device by an automatic retransmission scheme in response to reception acknowledgement information transmitted from the base station device, the mobile station device including a controller configured to determine a number of frames from a reception of the reception acknowledgement information to a transmission of the retransmission data, based on a position of a reception slot within a reception frame, the reception slot including the reception acknowledgement information.

Abstract: There is provided an OFDMA communication system capable of suppressing the communication resource reduction and reducing the processing load on a base station. The system includes a downlink frame generation unit (14) that generates a downlink frame for a downlink period for performing communication to at least one terminal (20) of a plurality of terminals from the base station (10), an uplink frame generation unit (24) that generates an uplink frame for an uplink period for performing communication to the base station (10) from at least one terminal (20) of the plurality of terminals, and a channel allocation unit that allocates, for one terminal of the plurality of terminals, one or more subchannels available in the one terminal, wherein the channel allocation unit allocates, among the subchannels, subchannels having a same time slot and a same frequency band in the downlink frame and in the uplink frame for a single terminal of the plurality of terminals.

Abstract: There is provided an OFDMA communication system capable of suppressing the communication resource reduction and reducing the processing load on a base station. The system includes a downlink frame generation unit (14) that generates a downlink frame for a downlink period for performing communication to at least one terminal (20) of a plurality of terminals from the base station (10), an uplink frame generation unit (24) that generates an uplink frame for an uplink period for performing communication to the base station (10) from at least one terminal (20) of the plurality of terminals, and a channel allocation unit that allocates, for one terminal of the plurality of terminals, one or more subchannels available in the one terminal, wherein the channel allocation unit notifies information of the allocated one or more available subchannels to the one terminal only by the downlink frame.

Abstract: Present invention provides a communication method and a communication system that can provide more detailed communication control, larger transmission capacity, and more flexible resource distribution to users in comparison with a communication method using a conventional frame format. There are provided a downlink frame generator 14 that generates a downlink frame for a downlink period in which a cell station 10 communicates with at least one personal station of the plurality of personal stations 20 in a predetermined frame format, and an uplink frame generator 24 that generates an uplink frame for an uplink period in which at least one personal station of the plurality of personal stations communicates with the cell station 10 in a predetermined frame format, wherein the frame format of the downlink frame includes a MAP field that notifies, in the downlink period, each personal station of information indicating an available or unavailable subchannel for each personal station.

Abstract: There are provided an OFDMA communication system capable of reducing a time necessary for a handover without releasing a wireless communication with a base station as a handover source to search base stations, a base station and a mobile station used in the communication system, and a base station switching method. In an OFDMA communication system in which data communication is performed between a plurality of base stations 10 and a plurality of mobile stations, each base station 10 includes subchannel assignment setting unit 15-1 which sets assignment of subchannels including a first subchannel and a second subchannel for each of the mobile stations, the first subchannel including information indicating usable or unusable subchannels of the respective mobile stations and being assigned to the respective mobile stations, the second subchannel including actually-used data.

Abstract: A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

Abstract: Each mobile station device (12) includes: a subchannel allocation refusal determining section (50), which determines a subchannel refused to be allocated from a base station device (10), based on a communication quality measured for each subchannel by a communication quality measuring section (44); an RMAP creating section (52), which creates refused channel information (RMAP information) indicating the subchannel determined to be refused to be allocated; and a transmitting section (54) which gives notice of the created RMAP information to the base station device (10).