Abstract: A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

Abstract: A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

Abstract: A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

Abstract: A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

Abstract: A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

Abstract: A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

Abstract: An electric arc melting furnace includes a furnace shell (1) with an electrode (3) for melting scrap by heat of arc, an air blasting port (20) for blasting air, oxygen or oxygen-enriched air into the furnace shell (1) through an air control valve (19), a carbon blasted quantity indicator (CI) for measuring quantity of carbon to be charged into the furnace shell (1), a scrap charged quantity indicator (SI) for measuring quantity of the scrap charged into the furnace shell (1), an oxygen blasted quantity indicator (OI) for measuring quantity of oxygen blasted into the furnace shell (1) and an arithmetic processor (7) for computing quantity of air required for complete combustion of carbon monoxide (23) in the furnace shell (1) in response to measured value from the indicators (CI)(SI)(OI) to control a degree of opening of the air control valve (19).

Abstract: An electric arc melting furnace comprises a furnace shell (1) with an electrode (3) for melting scrap by heat of arc, an air blasting port (20) for blasting air, oxygen or oxygen-enriched air into the furnace shell (1) through an air control valve (19), a carbon blasted quantity indicator (CI) for measuring quantity of carbon to be charged into the furnace shell (1), a scrap charged quantity indicator (SI) for measuring quantity of the scrap charged into the furnace shell (1), an oxygen blasted quantity indicator (OI) for measuring quantity of oxygen blasted into the furnace shell (1) and an arithmetic processor (7) for computing quantity of air required for complete combustion of carbon monoxide (23) in the furnace shell (1) in response to measured value from the indicators (CI)(SI)(OI) to control a degree of opening of the air control valve (19).

Abstract: An apparatus for preheating and charging scrap material includes a throat section (38) having at one end thereof a material charging inlet (37) connected to a furnace shell (2), the throat section extending laterally and upwardly obliquely, a heat exchanger section (39) connected to the other end of the throat section (38) and extending upwardly, a sealing section (42) above the heat exchanger section (39), a material supply (43) for supplying the scrap material into the sealing section (42), an exhaust duct (53) formed at the heat exchanger section (39) just below the sealing section (42) and connected to an exhaust system (58) and a material delivery device (46) disposed at the other end of the throat section (38) for delivering the scrap material (13) from the heat exchanger section (39) to the material charging inlet (37). The scrap material (13) is substantially continuously charged into the furnace shell (2) while preheated by the high-temperature exhaust gases from the furnace shell (2).

Abstract: Provided are a furnace shell with a lower electrode at a bottom of the shell, a furnace roof adapted to close an upper portion of the furnace shell, a material charge port substantially at a center of the furnace roof and two upper electrodes positioned laterally opposite to each other with respect to the material charge port and vertically extending through the furnace roof. Scrap material is continuously charged through the material charge port and arcs are directed to the scrap material at a center of the furnace shell.