Abstract: A heat source unit of a refrigerating apparatus includes a heat exchanger, an actuator, an electrical component controlling the actuator, a casing, and a partitioning plate. The casing has bottom and top plates with a vent on the top plate. The heat exchanger has first, second, third and fourth side face parts. The actuator is disposed in a first space surrounded by the first to fourth side face parts, and the partitioning plate. The electronic component is disposed in a second space partitioned from the first space by the partitioning plate. The second space is in a corner formed by the first and second side face parts. The partitioning plate is positioned between end parts of the first and fourth side face parts, and at least a portion is inserted between the bottom and top plates and fixed in a placed state.

Abstract: A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688×Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3×10?4 ?cm.

Abstract: The present invention relates to a substrate with a transparent electrode, which has a transparent electrode layer on at least one surface of a transparent film base material. The transparent film base material has a transparent dielectric material layer containing an oxide as a main component on a surface at the transparent electrode layer side. In one embodiment of the present invention, the transparent electrode layer is a crystalline transparent electrode layer that has a crystallinity degree of 80% or more. In this embodiment, the crystalline transparent electrode layer has a resistivity of 3.5×10?4 ?·cm or less, a thickness of 15 nm to 40 nm, an indium oxide content of 87.5% to 95.5%, and a carrier density of 4×1020/cm3 to 9×1020/cm3, and the substrate with the transparent electrode preferably has a heat shrinkage start temperature of 75° C. to 120° C. as measured by thermomechanical analysis.