Abstract: A solar cell element according to an embodiment of the present invention includes a p-type semiconductor layer; an n-type semiconductor layer disposed on a first main surface of the p-type semiconductor layer; an insulating layer disposed on a first main surface of the n-type semiconductor layer, and including a through hole in a thickness direction; an electrode disposed on a portion of the first main surface of the n-type semiconductor layer in the through hole of the insulating layer, and being thicker than the insulating layer; and a conductor layer disposed on a first main surface of the insulating layer, being out of contact with the electrode, and having a lower work function than the n-type semiconductor layer.

Abstract: The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step. Moreover, the photoelectric converter of the present invention comprises a substrate formed from silicon; a first protective film formed from aluminum oxide; and a second protective film formed from aluminum oxide, wherein the concentration of hydrogen contained in the first protective film is higher than the concentration of hydrogen contained in the second protective film.

Abstract: The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) that has a photoelectric conversion layer (2a) and is formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step.

Abstract: A light emitting element array that can perform a time-division driving operation with a small number of driving ICs is provided. A light emitting element array chip (1) includes n switch thyristors (S) (wherein n is an integer equal to or greater than 2), n signal transmission lines (GH) connected to N-gate electrodes (d) of the switch thyristors (S) individually, a plurality of light emitting thyristors (T) having N-gate electrodes (b) connected to one of the n signal transmission lines (GH). Anodes (e) of selection thyristors (U) are connected to the N-gate electrodes (d) of the n switch thyristors (S), and N-gate electrodes (f) of the selection thyristors (U) are connected to a common selection signal transmission line (CSL).

Abstract: A light emitting element array that can perform a time-division driving operation with a small number of driving ICs is provided. A light emitting element array chip (1) includes n switch thyristors (S) (wherein n is an integer equal to or greater than 2), n signal transmission lines (GH) connected to N-gate electrodes (d) of the switch thyristors (S) individually, a plurality of light emitting thyristors (T) having N-gate electrodes (b) connected to one of the n signal transmission lines (GH). Anodes (e) of selection thyristors (U) are connected to the N-gate electrodes (d) of the n switch thyristors (S), and N-gate electrodes (f) of the selection thyristors (U) are connected to a common selection signal transmission line (CSL).

Abstract: Provided are a light emitting element array that can perform a time-division driving operation with a small number of driving ICs and a small-sized light emitting device employing the light emitting element array and an image forming apparatus having the light emitting device. A light emitting element array chip (1) includes n pieces of switch thyristors (S) (n is an integer of 2 or more), n pieces of horizontal gate lines (GH) respectively connected to N gate electrodes of the n pieces of switch thyristors (S), a plurality of light emitting thyristors (T) whose N gate electrodes (b) each is connected to any one of the n horizontal gate lines (GH). One ends of CS resistors (RCS) are connected to the N gate electrodes (d) of the n pieces of switch thyristors (S), and the another ends of the CS resistors (RCS) are connected to a common selection signal input terminal (CS).

Abstract: A pulse modulator includes a circulator which comprises: two ferrite plates; a plurality of mode suppressors for transmitting therethrough an LSM mode electromagnetic wave while shutting off an LSE mode electromagnetic wave; and an impedance matching member mounted on one end face of each of the mode suppressors, wherein a pulse modulation switch having a Schottky barrier diode is mounted on the other end face of any one of the mode suppressors in such a manner that the direction of application of a bias voltage to the Schottky barrier diode coincides with the direction of electric field of the LSM mode electromagnetic wave, and wherein the distance from an edge of the ferrite plates to the Schottky barrier diode is set approximately equal to n?/2. Herein, n is an integer not smaller than 1, and ? is the wavelength of the high frequency signal.

Abstract: A NRD guide includes a pair of parallel plate conductors opposed to each other at a spacing equal to or shorter than half the wavelength of a high-frequency signal to be transmitted and having opposing inner surfaces whose arithmetic average roughness Ra satisfies 0.1 ?m?Ra?50 ?m, and a dielectric strip arranged between the pair of parallel plate conductors and held in contact with the respective inner surfaces of the parallel plate conductors. The dielectric strip is strongly secured to the inner surfaces to exhibit an excellent durability. The transmission loss of the high-frequency signal can be effectively suppressed.

Abstract: A NRD guide includes a pair of parallel plate conductors opposed to each other at a spacing equal to or shorter than half the wavelength of a high-frequency signal to be transmitted and having opposing inner surfaces whose arithmetic average roughness Ra satisfies 0.1 &mgr;m≦Ra≦50 &mgr;m, and a dielectric strip arranged between the pair of parallel plate conductors and held in contact with the respective inner surfaces of the parallel plate conductors. The dielectric strip is strongly secured to the inner surfaces to exhibit an excellent durability. The transmission loss of the high-frequency signal can be effectively suppressed.

Abstract: An object of the present invention is to facilitate positioning of a metal member for mounting a high-frequency diode and of a dielectric strip, thereby remarkably improving control of oscillation characteristics and workability in production.

Abstract: An object of the present invention is to facilitate positioning of a metal member for mounting a high-frequency diode and of a dielectric strip, thereby remarkably improving control of oscillation characteristics and workability in production.

Abstract: An object of the present invention is to facilitate positioning of a metal member for mounting a high-frequency diode and of a dielectric strip, thereby remarkably improving control of oscillation characteristics and workability in production.

Abstract: An object of the present invention is to provide an NRD guide which can be used in a wide band in a state where output levels of distributed high-frequency signals are nearly equal and does not require precise positioning, thereby enhancing mass productivity thereof. The NRD guide comprises a first straight dielectric strip made of cordierite ceramics having a dielectric constant of 4.8 and a dielectric loss of 2.7×10−4 (at a measurement frequency of 77 GHz) and having a section of 1.0 mm width×2.25 mm height, and a second dielectric strip joined to the first dielectric strip at a midway position thereof so as to be branched along an arc and bent at an angle of 90°, wherein the first and second dielectric strips are integrally produced, and the radius of curvature r of a junction (branched portion) of the second dielectric strip is 12.7 mm, which is larger than the wavelength &lgr;≈5 mm of high-frequency signals of 60 GHz.

Abstract: An object of the present invention is to provide an NRD guide which can be used in a wide band in a state where output levels of distributed high-frequency signals are nearly equal and does not require precise positioning, thereby enhancing mass productivity thereof. The NRD guide comprises a first straight dielectric strip made of cordierite ceramics having a dielectric constant of 4.8 and a dielectric loss of 2.7×10−4 (at a measurement frequency of 77 GHz) and having a section of 1.0 mm width×2.25 mm height, and a second dielectric strip joined to the first dielectric strip at a midway position thereof so as to be branched along an arc and bent at an angle of 90°, wherein the first and second dielectric strips are integrally produced, and the radius of curvature r of a junction (branched portion) of the second dielectric strip is 12.7 mm, which is larger than the wavelength &lgr;≈5 mm of high-frequency signals of 60 GHz.

Abstract: An object of the present invention is to provide an NRD guide which can be used in a wide band in a state where output levels of distributed high-frequency signals are nearly equal and does not require precise positioning, thereby enhancing mass productivity thereof. The NRD guide comprises a first straight dielectric strip made of cordierite ceramics having a dielectric constant of 4.8 and a dielectric loss of 2.7×10−4 (at a measurement frequency of 77 GHz) and having a section of 1.0 mm width×2.25 mm height, and a second dielectric strip joined to the first dielectric strip at a midway position thereof so as to be branched along an arc and bent at an angle of 90°, wherein the first and second dielectric strips are integrally produced, and the radius of curvature r of a junction (branched portion) of the second dielectric strip is 12.7 mm, which is larger than the wavelength &lgr;≈5 mm of high-frequency signals of 60 GHz.

Abstract: A pulse modulator includes a circulator which comprises: two ferrite plates; a plurality of mode suppressors for transmitting therethrough an LSM mode electromagnetic wave while shutting off an LSE mode electromagnetic wave; and an impedance matching member mounted on one end face of each of the mode suppressors, wherein a pulse modulation switch having a Schottky barrier diode is mounted on the other end face of any one of the mode suppressors in such a manner that the direction of application of a bias voltage to the Schottky barrier diode coincides with the direction of electric field of the LSM mode electromagnetic wave, and wherein the distance from an edge of the ferrite plates to the Schottky barrier diode is set approximately equal to n&lgr;/2. Herein, n is an integer not smaller than 1, and &lgr; is the wavelength of the high frequency signal.