Abstract: A multi-phase alternating-current rotational electric machine wherein semiconductor switching devices are electrically insulated from heat sinks, and the heat sinks are grounded to the housing and thermally separated in each phase.

Abstract: A semiconductor device, in which a solder layer bonding chip parts and wiring members are enclosed with the resin layer, and the solder layer is comprised of a compound body in which metal powder is distributed in the matrix metal, is disclosed. When a semiconductor device in which the chip parts are installed in the wiring member with the solders, the soldering part is sealed with the resin is mounted secondly on the external wiring member, the outflow of the solders and the short circuit due to the outflow, the disconnections, and the displacement of the chip parts can be prevented.

Abstract: Amulti-phase alternating-current rotational electric machine wherein semiconductor switching devices are electrically insulated from heat sinks, and the heat sinks are grounded to the housing and thermally separated in each phase.

Abstract: In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.

Abstract: In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies in its portion is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on respective of main plane of the semiconductor element and a main electrode plate.

Abstract: In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.

Abstract: Control electrode wirings which are led out from control electrodes over a number of chips built in a flat package and insulating members which are provided in order to insulate the control electrode wirings from main electrode wirings are also given function of positioning of the respective semiconductor chips in the flat package. Further, a one-piece control electrode wiring net is housed in the common electrodes of the package and the electrodes which are led out from the control electrodes of the respective semiconductor chips are connected to the net to simplify the processing of a large number of gate signal wirings.

Abstract: Control electrode wirings which are led out from control electrodes over a number of chips built in a flat package and insulating members which are provided in order to insulate the control electrode wirings from main electrode wirings are also given function of positioning of the respective semiconductor chips in the flat package. Further, a one-piece control electrode wiring net is housed in the common electrodes of the package and the electrodes which are led out from the control electrodes of the respective semiconductor chips are connected to the net to simplify the processing of a large number of gate signal wirings.

Abstract: In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies in its portion is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on respective of main plane of the semiconductor element and a main electrode plate.

Abstract: A method of producing a sintered multi-layer ceramic body used for ceramic parts of various electronic devices such as multi-layer substrates for LSI packaging and highly functional structural materials and by applying a pressure and/or constraining force to an outermost surface of the laminate. The method is featured by the shape of the surfaces to which a pressure and/or constraining force are not applied, ranges of the pressure and/or the constraining force, and the like.

Abstract: A composite ceramic sintered body is made from a ceramic matrix comprised mainly of silicon nitride, silicon oxynitride or an inorganic oxide selected from alumina, mullite, zirconia, high silica glass, lithium-aluminosilicate glass, magnesium-aluminosilicate glass or barium-magnesium-aluminosilicate glass, containing both whiskers and particles of a material selected from silicon carbide, silicon nitride, silicon oxynitride, alumina and zirconia dispersed therein. The whiskers have a diameter of 0.1 to 5 .mu.m and the particles have an average particle size of 5 to 60 .mu.m. The composite ceramic sintered body is homogeneous and isotropic, and it has a high strength and high toughness at a high temperature and an excellent heat resistance and oxidation resistance.

Abstract: An installation structure of integrated circuit devices, in which two or more types of integrated circuit devices of different base materials are installed onto the same installation substrate. Since the installation structure has a construction according to different characteristics such as a thermal conductivity, heat generation amount, thermal expansion coefficient and the like of the integrated circuit devices made of different materials, the reliability of each device and its connection and the reduction of the costs required for the cooling method can be presented.

Abstract: An integrated circuit package produced by bonding a rear surface of an insulating substrate enclosed in the package to a heat sink such as a cooling fin by a resinous adhesive, which may include one or more fillers, having a Young's modulus of 500 kg/cm.sup.2 or less when formed into a film, has high reliability at the bonding portion and withstands without damages even if subjected to thermal shocks.

Abstract: The present invention relates to a sintered product containing silicon carbide as a main component which comprises a phase(a) containing at least one metal selected from among Al, Sc, Y and rare earth elements and oxygen, a particle phase(b) comprising at least one metal carbide selected from among carbides of Ti, Zr, Hf, Va, Nb, Ta, W and the like, a composite particle phase(c) comprising said phase(a) and said phase(b) surrounding the phase(a) and silicon carbide matrix(d) in which the above phase(a), (b) and (c) are dispersed.The silicon carbide sintered product of the present invention exhibits a remarkably high strength and a remarkably high toughness which have not been attained up to this time, so that it can form various heat-resistant structural materials having a high reliability.