Patents by Inventor Hironori Matsuyoshi

Hironori Matsuyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a trench metal insulator metal capacitor
    Patent number: 9741817
    Abstract: A method for manufacturing a metal insulator metal (MIM) trench capacitor, the method may include forming a cavity in an Intermetal Dielectric stack, wherein a bottom of the cavity exposes a lower metal layer; wherein the Intermetal Dielectric stack comprises a top dielectric layer; depositing a first metal layer on a bottom of a cavity and on sidewalls of the cavity; depositing a sacrificial layer over the first metal layer; filling the cavity with a filling material; removing, by a planarization process, a portion of the sacrificial layer positioned above the top dielectric layer and a portion of the first metal layer positioned above the top dielectric layer to expose an upper portion of the sacrificial layer and an upper portion of the first metal layer; forming a recess by removing the upper portion of the sacrificial layer and the upper portion the first metal layer while using the filling material as a mask; removing the filling material by a first removal process that is selective to the sacrificial l
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: August 22, 2017
    Assignee: TOWER SEMICONDUCTOR LTD.
    Inventors: Michael Lisiansky, Amos Fenigstein, Yakov Roizin, Hironori Matsuyoshi, Toshiaki Ohmi
  • METHOD FOR MANUFACTURING A TRENCH METAL INSULATOR METAL CAPACITOR
    Publication number: 20170213896
    Abstract: A method for manufacturing a metal insulator metal (MIM) trench capacitor, the method may include forming a cavity in an Intermetal Dielectric stack, wherein a bottom of the cavity exposes a lower metal layer; wherein the Intermetal Dielectric stack comprises a top dielectric layer; depositing a first metal layer on a bottom of a cavity and on sidewalls of the cavity; depositing a sacrificial layer over the first metal layer; filling the cavity with a filling material; removing, by a planarization process, a portion of the sacrificial layer positioned above the top dielectric layer and a portion of the first metal layer positioned above the top dielectric layer to expose an upper portion of the sacrificial layer and an upper portion of the first metal layer; forming a recess by removing the upper portion of the sacrificial layer and the upper portion the first metal layer while using the filling material as a mask; removing the filling material by a first removal process that is selective to the sacrificial l
    Type: Application
    Filed: January 21, 2016
    Publication date: July 27, 2017
    Inventors: Michael Lisiansky, Amos Fenigstein, Yakov Roizin, Hironori Matsuyoshi, Toshiaki Ohmi