Abstract: A method for operating a transport robot includes receiving image data representative of a group of objects. One or more target objects are identified in the group based on the received image data. Addressable vacuum regions are selected based on the identified one or more target objects. The transport robot is command to cause the selected addressable vacuum regions to hold and transport the identified one or more target objects. The transport robot includes a multi-gripper assembly having an array of addressable vacuum regions each configured to independently provide a vacuum. A vision sensor device can capture the image data, which is representative of the target objects adjacent to or held by the multi-gripper assembly.

Abstract: A system and method for operating a transport robot to simultaneously grasp and transfer multiple objects is disclosed. The transport robot includes a multi-gripper assembly having an array of addressable vacuum regions each configured to independently provide a vacuum. The robotic system receives image data representative of a group of objects. Individual target objects are identified in the group based on the received image data. Addressable vacuum regions are selected based on the identified target objects. The transport robot is command to cause the selected addressable vacuum regions to simultaneously grasp and transfer multiple target objects.

Abstract: A robot and work equipment are disposed near a work table including a work table-side controller and a process planning and designing controller capable of being operated by a user. The work table-side controller executes a work process in which the robot and the work equipment operate in conjunction, by receiving signals carrying identification and state monitoring information from a robot-side controller and the work equipment and then sending these signals to the process planning and designing controller, and by sending operation command signals to the robot-side controller and the work equipment in accordance with the aforementioned work process and then receiving operation status signals from the robot-side controller and the work equipment. Based on the signals carrying the identification and state monitoring information on the robot and the work equipment, the process planning and designing controller plans and designs the aforementioned work process.

Abstract: The present disclosure relates to operation of a robotic system to transfer an object from a source to a destination. The robotic system may implement one or more motion plans or portions thereof to operate a picking robot to grip and lift the object and place a transfer tray under the lifted object. The robotic system may further implement the one or more motion plans or portions thereof to place the object on the transfer tray and laterally displace the transfer tray and the object thereon toward the destination. The robotic system may operate a placement mechanism to transfer the object from the transfer tray to the destination.

Abstract: The present disclosure relates to operation of a robotic system to transfer an object from a source to a destination. The robotic system may implement one or more motion plans or portions thereof to operate a picking robot to grip and lift the object and place a transfer tray under the lifted object. The robotic system may further implement the one or more motion plans or portions thereof to place the object on the transfer tray and laterally displace the transfer tray and the object thereon toward the destination. The robotic system may operate a placement mechanism to transfer the object from the transfer tray to the destination.

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract: A light irradiation apparatus includes: a rotary holding unit that rotates a substrate around a rotary axis while holding the substrate; a lighting unit positioned to face the rotary holding unit; a light shielding mask positioned between the rotary holding unit and the lighting unit, and widened along a direction orthogonal to the rotary axis; and a driving unit that linearly moves the lighting unit along the direction orthogonal to the rotary axis. The light shielding mask overlaps with the substrate when viewed in the direction of the rotary axis. The light shielding mask has an opening portion. An opening width of the opening portion at a side away from the rotary axis is larger than the opening with near the rotary axis. The lighting unit irradiates light through the opening portion toward the surface of the substrate while being moved above the opening portion by the driving unit.

Abstract: A method for correcting a drift of an accelerating voltage includes measuring, after a position of a focus of a charged particle beam has been adjusted based on a first adjustment value and a predetermined time period has passed, a second adjustment value when the position of the focus of the charged particle beam is newly adjusted, calculating a deviation amount between the first adjustment value and the second adjustment value, calculating, using a correlation stored in a storage device, a correction value of an accelerating voltage to be applied to a beam source which emits the charged particle beam, where the correction value corresponds to the deviation amount, and correcting the accelerating voltage to be applied to the beam source, by using the correlation value.

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract: A light irradiation apparatus includes: a rotary holding unit that rotates a substrate around a rotary axis while holding the substrate; a lighting unit positioned to face the rotary holding unit; a light shielding mask positioned between the rotary holding unit and the lighting unit, and widened along a direction orthogonal to the rotary axis; and a driving unit that linearly moves the lighting unit along the direction orthogonal to the rotary axis. The light shielding mask overlaps with the substrate when viewed in the direction of the rotary axis. The light shielding mask has an opening portion. An opening width of the opening portion at a side away from the rotary axis is larger than the opening with near the rotary axis. The lighting unit irradiates light through the opening portion toward the surface of the substrate while being moved above the opening portion by the driving unit.

Abstract: A method for correcting a drift of an accelerating voltage includes measuring, after a position of a focus of a charged particle beam has been adjusted based on a first adjustment value and a predetermined time period has passed, a second adjustment value when the position of the focus of the charged particle beam is newly adjusted, calculating a deviation amount between the first adjustment value and the second adjustment value, calculating, using a correlation stored in a storage device, a correction value of an accelerating voltage to be applied to a beam source which emits the charged particle beam, where the correction value corresponds to the deviation amount, and correcting the accelerating voltage to be applied to the beam source, by using the correlation value.

Abstract: A charged particle beam writing apparatus includes a first limiting aperture member, in which a first opening is formed, to block a charged particle beam having been blanking-controlled to be beam “off”, and to let a part of the charged particle beam having been blanking-controlled to be beam “on” pass through the first opening, a first detector to detect a first electron amount irradiating the first limiting aperture member, in a state where beam “on” and beam “off” are repeated, a first integration processing unit to generate a first integrated signal by integrating components in a band sufficiently lower than a band of a repetition cycle of beam “on” and beam “off”, in a first detected signal detected for obtaining the first electron amount, and a first irregularity detection unit to detect irregularity in a dose amount of the charged particle beam by using the first integrated signal.

Abstract: A charged particle beam writing apparatus includes a first limiting aperture member, in which a first opening is formed, to block a charged particle beam having been blanking-controlled to be beam “off”, and to let a part of the charged particle beam having been blanking-controlled to be beam “on” pass through the first opening, a first detector to detect a first electron amount irradiating the first limiting aperture member, in a state were beam “on” and beam “off” are repeated, a first integration processing unit to generate a first integrated signal by integrating components in a band sufficiently lower than a band of a repetition cycle of beam “on” and beam “off”, in a first detected signal detected for obtaining the first electron amount, and a first irregularity detection unit to detect irregularity in a dose amount of the charged particle beam by using the first integrated signal.