Abstract: In a light detection device, the light detection unit includes an APD, a plurality of temperature compensation diodes, and a terminal electrically connecting the APD and the plurality of temperature compensation diodes in parallel with each other. The plurality of temperature compensation diodes is configured to provide temperature compensation for the gain of the APD. The light detection unit has a light detection region and temperature detection regions. The APD is provided in the light detection region. The temperature detection regions are located around the light detection region. The plurality of temperature compensation diodes are provided in the temperature detection regions. The light detection region is interposed between the temperature detection region and the temperature detection region.

Abstract: In a light detection device 1 the plurality of pad electrodes are arranged on the semiconductor substrate. Each of the plurality of wires is connected to the pad electrode corresponding thereto. A stitch bond of a corresponding wire is formed on each pad electrode. A distance between each pad electrode and a cell corresponding to the pad electrode is smaller than a distance between the pad electrodes connected to mutually different cells of the cells. The plurality of pad electrodes are arranged in a first region and a second region that are spaced apart from each other with a light receiving region interposed therebetween. The pad electrode corresponding to a cell is arranged in the first region. The pad electrode corresponding to a cell is arranged in the second region.

Abstract: A determination method determines a difference voltage between a breakdown voltage and a bias voltage. A temperature compensation unit provides temperature compensation for the gain of the APD by controlling the bias voltage based on the difference voltage. The bias voltage is “Vr”, and the gain of the APD to which the bias voltage is applied is “M”. The slope and intercept of the regression line having “(1/M)×(dM/dVr)” as an objective variable and “M” as an explanatory variable in data indicating the correlation between the bias voltage and the gain are obtained. “?V” calculated by substituting the slope into “a” in the Equation (1), substituting the intercept into “b” in the Equation (1), and substituting a gain to be set in an avalanche photodiode of a light detection device into “Md” in the Equation (1) is determined as the difference voltage.

Abstract: A light detection device includes an APD, a plurality of temperature compensation diodes, and a circuit unit. The plurality of temperature compensation diodes have different breakdown voltages lower than a breakdown voltage of the APD. The circuit unit puts any one of the plurality of temperature compensation diodes into a breakdown state. The circuit unit includes a plurality of terminals and a terminal. The plurality of terminals are respectively connected to electrodes of the mutually different temperature compensation diodes. The terminal is electrically connected to the APD and electrodes of the temperature compensation diodes.

Abstract: In a light detection device, the semiconductor substrate forms an APD and a temperature compensation diode so as to be spaced apart from each other. The semiconductor substrate includes a peripheral carrier absorbing portion configured to absorb carriers located at the periphery, between the APD and the temperature compensation diode when viewed from the direction perpendicular to the main surface. When viewed from the direction perpendicular to the main surface, on a line segment connecting the APD and the temperature compensation diode at the shortest distance, the shortest distance between the APD and the peripheral carrier absorbing portion is smaller than the shortest distance between the temperature compensation diode and a portion, which is closest to the APD, of edges of the peripheral carrier absorbing portion.

Abstract: A determination method determines a difference voltage between a breakdown voltage and a bias voltage. A temperature compensation unit provides temperature compensation for the gain of the APD by controlling the bias voltage based on the difference voltage. The bias voltage is “Vr”, and the gain of the APD to which the bias voltage is applied is “M”. The slope and intercept of the regression line having “(1/M)×(dM/dVr)” as an objective variable and “M” as an explanatory variable in data indicating the correlation between the bias voltage and the gain are obtained. “?V” calculated by substituting the slope into “a” in the Equation (1), substituting the intercept into “b” in the Equation (1), and substituting a gain to be set in an avalanche photodiode of a light detection device into “Md” in the Equation (1) is determined as the difference voltage.

Abstract: In a light detection device, the light detection unit includes an APD, a plurality of temperature compensation diodes, and a terminal electrically connecting the APD and the plurality of temperature compensation diodes in parallel with each other. The plurality of temperature compensation diodes is configured to provide temperature compensation for the gain of the APD. The light detection unit has a light detection region and temperature detection regions. The APD is provided in the light detection region. The temperature detection regions are located around the light detection region. The plurality of temperature compensation diodes are provided in the temperature detection regions. The light detection region is interposed between the temperature detection region and the temperature detection region.

Abstract: A light detection device includes an APD, a plurality of temperature compensation diodes, and a circuit unit. The plurality of temperature compensation diodes have different breakdown voltages lower than a breakdown voltage of the APD. The circuit unit puts any one of the plurality of temperature compensation diodes into a breakdown state. The circuit unit includes a plurality of terminals and a terminal. The plurality of terminals are respectively connected to electrodes of the mutually different temperature compensation diodes. The terminal is electrically connected to the APD and electrodes of the temperature compensation diodes.

Abstract: In a light detection device 1 the plurality of pad electrodes are arranged on the semiconductor substrate. Each of the plurality of wires is connected to the pad electrode corresponding thereto. A stitch bond of a corresponding wire is formed on each pad electrode. A distance between each pad electrode and a cell corresponding to the pad electrode is smaller than a distance between the pad electrodes connected to mutually different cells of the cells. The plurality of pad electrodes are arranged in a first region and a second region that are spaced apart from each other with a light receiving region interposed therebetween. The pad electrode corresponding to a cell is arranged in the first region. The pad electrode corresponding to a cell is arranged in the second region.

Abstract: A light detection device includes a semiconductor substrate. The semiconductor substrate forms an APD and a temperature compensation diode so as to be spaced apart from each other when viewed from a direction perpendicular to a main surface. The semiconductor substrate includes a peripheral carrier absorbing portion surrounding the APD when viewed from the direction perpendicular to the first main surface and configured to absorb carriers located at the periphery. A part of the peripheral carrier absorbing portion is located between the APD and the temperature compensation diode when viewed from the direction perpendicular to the main surface.

Abstract: In a light detection device, the semiconductor substrate has first and second main surfaces facing each other. The semiconductor substrate includes a plurality of cells. Each of the plurality of cells includes at least one avalanche photodiode. The plurality of pad electrodes are arranged on the first main surface so as to be spaced apart from the plurality of cells. The plurality of wiring portions are arranged on the first main surface. Each of the plurality of wiring portions connects the cell and the pad electrode corresponding to each other. The semiconductor substrate includes a peripheral carrier absorbing portion configured to absorb carriers located at a periphery of the peripheral carrier absorbing portion. The peripheral carrier absorbing portion is provided around each pad electrode and each wiring portion when viewed from a direction perpendicular to the first main surface.

Abstract: The present invention discloses an automatic semiconductor device classification system including a current measuring unit, a data memory, a processor connected to the data memory and the current measuring unit, and an output unit connected to the processor. Patterns of curves representing approximate I-V characteristics between predetermined electrodes of semiconductor devices are automatically determined and the approximate I-V characteristics are classified into predetermined categories. The data memory stores the discrete I-V relations, and further stores a first control voltage, a first threshold current value at the first control voltage, a second control voltage corresponding to the second control voltage. The processor includes an acquisition circuit, a comparison circuit and a classification circuit. In the acquisition circuit, the first decision current value at the first control voltage and the second decision current value at the second control voltage are obtained using the measured results.

Abstract: This invention relates to a method of manufacturing a semiconductor device having elements isolated by a trench. A trench is formed to surround an element region of a silicon substrate by anisotropic etching. A nonoxide film such as a silicon nitride film is selectively formed on the upper surface of the element region. Thermal oxidation is performed using the nonoxide film as a mask to form an oxide film on the inner face of the trench and the upper surface of a field region. Thereafter, a polysilicon layer is buried in the trench, and after the surface of the polysilicon layer is flattened, a capping oxide film is formed on the upper surface of the trench. In addition, a non-oxide film is formed to have an interval between the end of the nonoxide film and the trench of 2 .mu.m or more.

Abstract: A heat-treatment apparatus includes a quartz heat-treatment tube having a vertically set axis in which a heat-treatment gas is supplied from its lower portion, and a quartz cap to be mounted on an upper opening portion of the heat-treatment tube. An opening is formed in a central portion of the cap, a quartz rod is inserted through the opening along the axis of the heat-treatment tube, and semiconductor parts to be heat-treated are held by the rod. A first exhaust duct is formed in a side surface of the heat-treatment tube at a position higher than at least the semiconductor parts held by the rod and exhausts the heat-treatment gas in the heat-treatment tube. A ring-like chamber open toward the inner surface of the cap is formed in the outer circumferential surface of the heat-treatment tube in a position close to the upper opening surface, and a second exhaust duct communicates with this chamber.

Abstract: A semiconductor device of this invention is characterized in that one element region is electrically isolated from another element region adjacent thereto by forming a groove surrounding the one element region and a distance between the groove surrounding one element region and a groove surrounding the another element region is set to be equal to or larger than 3 .mu.m.

Abstract: A method of manufacturing a semiconductor having a trench region is disclosed. After an etching process for forming an trench region in a substrate, the corners of the trench region are covered with a polycrystalline layer. The structure is subjected to an oxidation treatment. Since the polycrystalline layer covers the corners roundly, the oxidation results in semiconductor islands having rounded corners.