Patents by Inventor Hironori Takagi

Hironori Takagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240087730
    Abstract: An ambulance service support device receives biological information to be used for personal identification of a person to be transported. The ambulance service support device identifies, using a database storing personal medical information, the personal medical information of the person to be transported by using the acquired biological information. The personal medical information is personal information regarding medical care including the biological information. The ambulance service support device outputs emergency support information obtained from the identified personal medical information.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 14, 2024
    Applicant: NEC Corporation
    Inventors: Hiroki NAOSHIMA, Hironori NAKATA, Eiji TAKADA, Yuji TAKAGI, Yuri MASHIMO
  • Publication number: 20240087732
    Abstract: An ambulance service support device receives biological information to be used for personal identification of a person to be transported. The ambulance service support device identifies, using a database storing personal medical information, the personal medical information of the person to be transported by using the acquired biological information. The personal medical information is personal information regarding medical care including the biological information. The ambulance service support device outputs emergency support information obtained from the identified personal medical information.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: NEC Corporation
    Inventors: Hiroki NAOSHIMA, Hironori NAKATA, Eiji TAKADA, Yuji TAKAGI, Yuri MASHIMO
  • Patent number: 11891018
    Abstract: A storage compartment includes a housing, a lid, a locking mechanism, and a closure mechanism. The lid is pivotally coupled to the housing about a pivot axis for movement between a closed position and an opened position. The locking mechanism is displaceable in a first direction to move between an unlocked position and a locked position, the first direction extending generally normal to the pivot axis. The closure mechanism is configured to inhibit movement of the lid from the closed position towards the opened position upon movement of the locking mechanism to the unlocked position due to movement of the housing in the first direction with respect to the lid.
    Type: Grant
    Filed: April 7, 2021
    Date of Patent: February 6, 2024
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Hironori Takagi, Aaron Klenke
  • Publication number: 20220325566
    Abstract: A storage compartment includes a housing, a lid, a locking mechanism, and a closure mechanism. The lid is pivotally coupled to the housing about a pivot axis for movement between a closed position and an opened position. The locking mechanism is displaceable in a first direction to move between an unlocked position and a locked position, the first direction extending generally normal to the pivot axis. The closure mechanism is configured to inhibit movement of the lid from the closed position towards the opened position upon movement of the locking mechanism to the unlocked position due to movement of the housing in the first direction with respect to the lid.
    Type: Application
    Filed: April 7, 2021
    Publication date: October 13, 2022
    Inventors: Hironori Takagi, Aaron Klenke
  • Patent number: 7947994
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: May 24, 2011
    Assignee: Nichia Corporation
    Inventors: Koji Tanizawa, Tomotsugu Mitani, Yoshinori Nakagawa, Hironori Takagi, Hiromitsu Marui, Yoshikatsu Fukuda, Takeshi Ikegami
  • Publication number: 20080191195
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device.
    Type: Application
    Filed: March 12, 2008
    Publication date: August 14, 2008
    Applicant: NICHIA CORPORATION
    Inventors: Koji TANIZAWA, Tomotsugu MITANI, Yoshinori NAKAGAWA, Hironori TAKAGI, Hiromitsu MARUI, Yoshikatsu FUKUDA, Takeshi IKEGAMI
  • Patent number: 7402838
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: July 22, 2008
    Assignee: Nichia Corporation
    Inventors: Koji Tanizawa, Tomotsugu Mitani, Yoshinori Nakagawa, Hironori Takagi, Hiromitsu Marui, Yoshikatsu Fukuda, Takeshi Ikegami
  • Publication number: 20070063207
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device.
    Type: Application
    Filed: November 16, 2006
    Publication date: March 22, 2007
    Inventors: Koji Tanizawa, Tomotsugu Mitani, Yoshinori Nakagawa, Hironori Takagi, Hiromitsu Marui, Yoshikatsu Fukuda, Takeshi Ikegami
  • Patent number: 7193246
    Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
    Type: Grant
    Filed: March 10, 1999
    Date of Patent: March 20, 2007
    Assignee: Nichia Corporation
    Inventors: Koji Tanizawa, Tomotsugu Mitani, Yoshinori Nakagawa, Hironori Takagi, Hiromitsu Marui, Yoshikatsu Fukuda, Takeshi Ikegami