Abstract: A vehicle lamp is provided with a feeder device for simplifying the labor of disposing feeder cords while improving accuracy. The vehicle lamp has a movable reflector tiltably supported by a lamp body via an aiming mechanism. A back cover is detachably fitted in an opening formed in the rear of the lamp body. The back cover includes a terminal for conducting the terminal of a feeder cord connected to a light source provided in the lamp body, and the terminal of a power supply cord connected to a power supply for supplying power to the light source.

Abstract: A vehicle lamp comprising a reflector, a discharge bulb, a connector, and a electrically-conductive cover. The reflector includes an electrically-conductive film on a surface of the reflector and a contact terminal portion electrically connected to the electrically-conductive film. The discharge bulb is supported in the reflector. The connector is detachably connected to the discharge bulb, and the electrically-conductive cover covers the connector. In the vehicle lamp, the electrically-conductive cover is in contact with the contact terminal portion of the reflector when the connector is connected to the discharge bulb.

Abstract: An electrical connector for an automotive headlamp includes a connector housing formed from an insulating material and electrical terminals which are electrically conductive and inserted into the respective sleeves of the connector housing. Respective planar connecting portions of the electrical terminals are disposed in the same plane and are disposed to as to about a plane in which corresponding external terminals provided in the lamp are disposed. Thus, the length of the connector housing in the direction perpendicular to the plane of the planar connecting portions can be reduced, thereby reducing the width of the electrical connector. As a result, the overall height of the headlamp can be reduced.

Abstract: The purpose of the present invention is to provide a semiconductor light-emitting element that can reduce an operational voltage by improving a contact construction with a p-side electrode. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a ZnSSe cap layer, a ZnSe cap layer, a compositional gradient super-lattice layer, and a low defect contact layer are sequentially laminated on an n-type substrate. The compositional gradient super-lattice layer is formed by alternately laminating p-type ZnTe layers and p-type ZnSe layers. The p-type ZnTe layers are formed to be thickened toward the side of the low defect contact layer. The thickness of the low defect contact layer must be 5 nm or less. Relaxing lattice distortion reduces defect density of the low defect contact layer. Accordingly, the increase in the operational voltage immediately after energization is suppressed, and the operational voltage becomes lower.

Abstract: A microscopic interconnection pattern and a gate electrode can be prevented from being deformed when a first region requiring high temperature heating, such as a source-drain region and a second region which should be prevented from being heated at high temperature, such as a microscopic interconnection pattern and a gate electrode are formed on the same semiconductor substrate. A first region which requires high temperature heating and a second region which should be avoided from being heated at high temperature are formed on a semiconductor substrate. In that case, the second region is composed of a narrow portion (1) and wide portions (2) wider than the narrow portion (1) formed on respective ends of the narrow portion 1. Then, the semiconductor substrate is photo-annealed.

Abstract: By applying the method, the critical film thickness of a compound semiconductor layer is determined, and a semiconductor device having a compound semiconductor layer with an optimized film thickness excellent in emitting performance is manufactured.The relationship between film thickness of a compound semiconductor layer and photoluminescence (PL) corresponding to the film thickness is obtained by measurement, the film thickness where PL exhibits a peak is designated as critical film thickness. The semiconductor layer comprises II-VI group compound semiconductor layer containing at least cadmium. The relationship between the critical film thickness and cadmium composition ratio is obtained by measurement. An equation which approximates the relationship between the critical film thickness and cadmium composition ratio is formulated.

Abstract: A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-VI column compound semiconductor layers not containing Te. The second chamber is used to form II-VI column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers.

Abstract: A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II-VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.

Abstract: A vehicular lamp which can be manufactured without removing insulating covers from lamp-side cords to expose the core wires, and in which the lamp-side cords can be readily connected between terminals arranged in a socket or connector, the wiring and connecting of the cords is achieved in a short time, and can be automated. A connector and sockets are detachably mounted on a rear cover. The connector includes a connector casing, and a plurality of terminals. Each of the terminals has a cord connecting groove, the edge of which serves as an insulating cover cutting edge. When the connector casing is engaged with a mounting section and secured with elastic engaging pieces, the terminals are caused to push the cords so that the cords are pushed into the cord connecting grooves of the terminals. In this operation, the insulating covers of the cords are cut by the insulating-cover cutting edge, so that the core wires of the cords are electrically connected to the terminals.

Abstract: A method for growing a II-VI compound semiconductor layer containing Cd, such as Zn.sub.1-x Cd.sub.x Se, by a molecular beam epitaxy method is disclosed. During the growth, the ratio of the intensity of molecular beams of a group VI element to the intensity of molecular beams of a group II element in terms of intensities of molecular beams actually irradiated onto a substrate, namely, the substantial VI/II ratio, is controlled preferably in the range from 0.7 to 1.3, to increase the Cd incorporating efficiency into the grown layer sufficiently high.

Abstract: An outer lens attachment structure in which a lamp body is integrally formed with an engagement device having an engagement piece member which is bent inwardly of an opening part of the lamp body to be engaged therewith, and when the engagement piece member is depressed to be bent inwardly, the engagement piece member urges the peripheral part of the outer lens against the opening periphery of the lamp body so that the peripheral part of the outer lens is securely held between the engagement piece member and the opening periphery of the lamp body.

Abstract: The headlamp is structured such that a reflector 4 is supported within a lamp body 2 so as to be inclinable with respect to the lamp body 2 and, by rotatively operating an aiming screw 20 which extends through and forwardly of the lamp body 2 and is supported rotatable in the extend-through portion thereof, the reflector 4 is inclined right and left with respect to the lamp body 2 by an amount equivalent to the amount of rotation of the aiming screw 20 to thereby be able to adjusted the right and left illumination angle of the headlamp.

Abstract: By applying the method, the critical film thickness of a compound semiconductor layer is determined, and a semiconductor device having a compound semiconductor layer with an optimized film thickness excellent in emitting performance is manufactured.The relationship between film thickness of a compound semiconductor layer and photoluminescence (PL) corresponding to the film thickness is obtained by measurement, the film thickness where PL exhibits a peak is designated as critical film thickness. The semiconductor layer comprises II-VI group compound semiconductor layer containing at least cadmium. The relationship between the critical film thickness and cadmium composition ratio is obtained by measurement. An equation which approximates the relationship between the critical film thickness and cadmium composition ratio is formulated.

Abstract: A reflector with an electric lighting bulb mounted thereto is coupled to a lamp body via a ball-and-socket connection and a vertical and a horizontal aiming screw. Each aiming screw comprises a threaded shank engaged with a nut on the back of the reflector, a journal joined to the threaded shank and rotatably received in a bearing sleeve formed on the lamp body, and a head portion joined to the journal and projecting rearwardly from the bearing sleeve. The aiming screw is formed to include two collars for engaging the bearing sleeve therebetween and so the aiming screw is restrained from axial displacement relative to the sleeve. The diameters of the various parts of the aiming screw and of the bearing sleeve are so determined in relation to one another that, in the assemblage of the headlamp, the aiming screw can be inserted, with its head portion foremost, into and through the bearing sleeve from inside the lamp body, either before or after coupling the aiming screw to the reflector via the nut.

Abstract: A vehicular lamp having a structure of electrical connection between a lamp bulb serving as a light source installed in a lamp body and an external power source for supplying electric power to the lamp bulb which includes a back cover detachably attached to a bulb insertion hole formed in a back surface of the lamp body and a relay connector connecting with both the lamp bulb and an external power source, and the relay connector is constituted by an internal electrical connection section disposed at an inside of the back cover for electrically connecting with the lamp bulb and an external electrical connection section disposed at an outside of the back cover for connecting with a harness for the external power source. The internal electrical connection section and the external electrical connection section are formed integrally with each other by a conductive terminal which penetrates the back cover.

Abstract: An automotive headlamp having a tilt measuring device for measuring an amount of horizontal tilt of a reflector is mounted between an aiming screw and a guide member extending parallel to the aiming screw. The aiming screw is supported by a lamp body. By turning (or moving back and forth) the aiming screw, the reflector is tilted in the horizontal direction. The tilt measuring device includes a slide member loosely coupled to the aiming screw and slidable along a guide member, a screw holding member functioning such that when the screw holding member grasps the aiming screw in proximity to the slide member, the sliding motion of the slide member is associated with the rotation (or the back and forth movement) of the aiming screw, and when the screw holding member is retracted to the side of the aiming screw, the coupling of the slide member with the aiming screw is released, a cursor provided on the slide member, and a scale provided on the guide member.

Abstract: A vehicular headlamp having an aiming leveling device in which a support table is formed so as to project from a reflector which is tiltable relatively to a lamp body, and a bubble tube support frame supporting a linear bubble tube is provided in such a manner that one end of the support frame is fixed to the support table while the other end of the support frame is held by a zero point adjusting means used to adjust the position of the other end of the support frame in the up/down direction, with the support frame extending substantially parallel to an optical axis, and with the quantity of tilting of the reflector in the up/down direction being indicated by the bubble tube.

Abstract: A method of fabricating a semiconductor device comprises: a first annealing process for annealing a semiconductor substrate provided with element isolating regions and gate electrode regions; and a second annealing process for annealing the semiconductor substrate further provided with source-drain regions with a pulse laser beam. The first annealing process is a furnace annealing process of a rapid thermal annealing process. Most preferably, the pulse laser beam may be emitted by a XeF laser which emits a laser beam of 351 nm in wavelength or a XeCl laser which emits a laser beam of 308 nm in wavelength. The first annealing process activates electrically relatively thick conductive layers formed in the element isolating regions and gate electrode regions and forms a silicide layer of a low resistance over the gate electrode regions. The second annealing process forms relatively shallow junctions in the source-drain regions.

Abstract: XeCl excimer laser annealing for activating a source/drain region of a MOS-FET is carried out without deforming a gate electrode. Generally, a reflectance of a thin film varies in accordance with a cycle of .lambda./2n due to interference of an incident light and a reflection light. A difference of thickness d.sub.1 between a thickness d.sub.3 of the film for attaining a maximum reflectance and a thickness d.sub.2 for attaining a minimum reflectance is indicated by .lambda./4n. Thus, a first SiO.sub.2 film pattern 8 of the thickness d.sub.1 is formed in advance on a gate electrode 7a, and a second SiO.sub.2 film 12 is formed on an entire surface of a wafer so that the thickness of the film on the source drain region (a high-concentration impurity diffused region 11 and an LDD region 9) becomes d.sub.2. Even under conditions for sufficient heating of the source/drain regions, heat generation of the gate electrode 7a can be controlled, thereby preventing deformation thereof.