Patents by Inventor Hiroo Nishi

Hiroo Nishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING FIN-SHAPED FIELD EFFECT TRANSISTOR
    Publication number: 20150079779
    Abstract: Disclosed is a semiconductor device including: an active region defined by an element isolation region; a gate trench going across the active region to define source/drain regions on both sides thereof, respectively, and to define, between the source/drain regions, the channel region having a first, second, and third protruding portions which are arranged in a gate width direction; and a gate electrode formed in the gate trench so as to cover the channel region through a gate insulating film.
    Type: Application
    Filed: November 24, 2014
    Publication date: March 19, 2015
    Inventors: Hiroo NISHI, Hiromitsu OSHIMA
  • Semiconductor device having fin-shaped field effect transistor and manufacturing method thereof
    Patent number: 8916918
    Abstract: Disclosed is a semiconductor device including: an active region defined by an element isolation region; a gate trench going across the active region to define source/drain regions on both sides thereof, respectively, and to define, between the source/drain regions, the channel region having a first, second, and third protruding portions which are arranged in a gate width direction; and a gate electrode formed in the gate trench so as to cover the channel region through a gate insulating film.
    Type: Grant
    Filed: April 4, 2012
    Date of Patent: December 23, 2014
    Assignee: PS4 Luxco S.A.R.L.
    Inventors: Hiroo Nishi, Hiromitsu Oshima
  • Semiconductor device
    Patent number: 8785999
    Abstract: A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the first interlayer insulating film, and is electrically connected to the first conductive member, the contact plug including a small-diameter part, and a large-diameter part arranged on the small-diameter part, an outer diameter of the large-diameter part being larger than an outer diameter of the small-diameter part, and the outer diameter of the large-diameter part being larger than an outer diameter of a connection face between the second conductive member and the large-diameter part; and a second conductive member that is provided on the first interlayer insulating film, and is electrically connected to the contact plug.
    Type: Grant
    Filed: August 12, 2011
    Date of Patent: July 22, 2014
    Assignee: PS4 Luxco S.A.R.L.
    Inventor: Hiroo Nishi
  • SEMICONDUCTOR DEVICE HAVING FIN-SHAPED FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
    Publication number: 20130264621
    Abstract: Disclosed is a semiconductor device including: an active region defined by an element isolation region; a gate trench going across the active region to define source/drain regions on both sides thereof, respectively, and to define, between the source/drain regions, the channel region having a first, second, and third protruding portions which are arranged in a gate width direction; and a gate electrode formed in the gate trench so as to cover the channel region through a gate insulating film.
    Type: Application
    Filed: April 4, 2012
    Publication date: October 10, 2013
    Applicant: ELPIDA MEMORY, INC.
    Inventors: Hiroo NISHI, Hiromitsu OSHIMA
  • SEMICONDUCTOR DEVICE
    Publication number: 20110291239
    Abstract: A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the first interlayer insulating film, and is electrically connected to the first conductive member, the contact plug including a small-diameter part, and a large-diameter part arranged on the small-diameter part, an outer diameter of the large-diameter part being larger than an outer diameter of the small-diameter part, and the outer diameter of the large-diameter part being larger than an outer diameter of a connection face between the second conductive member and the large-diameter part; and a second conductive member that is provided on the first interlayer insulating film, and is electrically connected to the contact plug.
    Type: Application
    Filed: August 12, 2011
    Publication date: December 1, 2011
    Applicant: Elpida Memory, Inc.
    Inventor: Hiroo NISHI
  • Semiconductor device and semiconductor device manufacturing method
    Patent number: 8008159
    Abstract: A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the first interlayer insulating film, and is electrically connected to the first conductive member, the contact plug including a small-diameter part, and a large-diameter part arranged on the small-diameter part, an outer diameter of the large-diameter part being larger than an outer diameter of the small-diameter part, and the outer diameter of the large-diameter part being larger than an outer diameter of a connection face between the second conductive member and the large-diameter part; and a second conductive member that is provided on the first interlayer insulating film, and is electrically connected to the contact plug.
    Type: Grant
    Filed: July 3, 2008
    Date of Patent: August 30, 2011
    Assignee: Elpida Memory, Inc.
    Inventor: Hiroo Nishi
  • SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    Publication number: 20090008744
    Abstract: A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the first interlayer insulating film, and is electrically connected to the first conductive member, the contact plug including a small-diameter part, and a large-diameter part arranged on the small-diameter part, an outer diameter of the large-diameter part being larger than an outer diameter of the small-diameter part, and the outer diameter of the large-diameter part being larger than an outer diameter of a connection face between the second conductive member and the large-diameter part; and a second conductive member that is provided on the first interlayer insulating film, and is electrically connected to the contact plug.
    Type: Application
    Filed: July 3, 2008
    Publication date: January 8, 2009
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Hiroo NISHI