Patents by Inventor Hiroomi KANEKO
Hiroomi KANEKO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220286110Abstract: An acoustic wave device includes a substrate, a transmission filter formed on the substrate, a reception filter formed on the substrate, a transmission ground pad of the transmission filter, the transmission ground pad is formed on the substrate, and a reception ground pad of the reception filter, the reception ground pad is formed on the substrate. The transmission filter includes a plurality of series resonators and a plurality of parallel resonators. The plurality of parallel resonators includes a first parallel resonator electrically connected to the reception ground pad.Type: ApplicationFiled: June 15, 2021Publication date: September 8, 2022Inventor: Hiroomi KANEKO
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Patent number: 10666226Abstract: A ladder-type filter includes: a first piezoelectric thin film resonator including a first lower electrode, a first piezoelectric film, a first upper electrode, and an insertion film inserted between the first lower and upper electrodes, the insertion film being located in an outer peripheral region of a first resonance region; a second piezoelectric thin film resonator including a second lower electrode, a second piezoelectric film, and a second upper electrode, the second piezoelectric thin film resonator having no insertion film between the second lower and upper electrodes in a second resonance region; a series resonator, at least one of the series resonator being a first resonator that is one of the first and second piezoelectric thin film resonators, and a parallel resonator, at least one of the parallel resonator being a second resonator that is another of the first and second piezoelectric thin film resonators.Type: GrantFiled: September 17, 2018Date of Patent: May 26, 2020Assignee: TAIYO YUDEN CO., LTD.Inventors: Yuki Takahashi, Hiroomi Kaneko, Hiroshi Kawakami, Shinji Taniguchi
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Patent number: 10523177Abstract: A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.Type: GrantFiled: June 14, 2018Date of Patent: December 31, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Shinji Taniguchi, Hiroomi Kaneko, Hiroshi Kawakami, Tokihiro Nishihara
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Patent number: 10469049Abstract: A piezoelectric thin film resonator includes: an acoustic reflection layer including an air gap or an acoustic mirror; lower and upper electrodes facing each other in a stacking direction, at least a part of each of the lower and upper electrodes being located on or above the acoustic reflection layer; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, at least a part of an end face of the piezoelectric film in a film thickness direction being located between outer outlines of the resonance region and the acoustic reflection layer in at least a part of a region surrounding a resonance region; and an insertion film inserted between the lower and upper piezoelectric films, located in at least a part of an outer peripheral region within the resonance region, and not located in a center region of the resonance region.Type: GrantFiled: November 21, 2016Date of Patent: November 5, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Jiansong Liu, Tsuyoshi Yokoyama, Hiroomi Kaneko, Shinji Taniguchi, Tokihiro Nishihara
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Patent number: 10404230Abstract: A piezoelectric thin film resonator includes: lower and upper electrodes located on a substrate and facing each other; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, an outer outline of the upper piezoelectric film coinciding with or being located further out than an outer outline of a resonance region in a region surrounding the resonance region, the outer outline of the upper piezoelectric film being located further in than an outer outline of the lower piezoelectric film in the region; an insertion film interposed between the lower and upper piezoelectric films, located in an outer peripheral region within the resonance region, not located in a central region of the resonance region, and located on an upper surface of the lower piezoelectric film in the region; and a protective film located on the upper electrode in the resonance region, and located so as to cover an end face of the upper piezoelectric film and an upper surface of tType: GrantFiled: January 26, 2017Date of Patent: September 3, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Hiroomi Kaneko, Hiroshi Kawakami, Shinji Taniguchi, Tokihiro Nishihara, Tsuyoshi Yokoyama
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Publication number: 20190115901Abstract: A ladder-type filter includes: a first piezoelectric thin film resonator including a first lower electrode, a first piezoelectric film, a first upper electrode, and an insertion film inserted between the first lower and upper electrodes, the insertion film being located in an outer peripheral region of a first resonance region; a second piezoelectric thin film resonator including a second lower electrode, a second piezoelectric film, and a second upper electrode, the second piezoelectric thin film resonator having no insertion film between the second lower and upper electrodes in a second resonance region; a series resonator, at least one of the series resonator being a first resonator that is one of the first and second piezoelectric thin film resonators, and a parallel resonator, at least one of the parallel resonator being a second resonator that is another of the first and second piezoelectric thin film resonators.Type: ApplicationFiled: September 17, 2018Publication date: April 18, 2019Applicant: TAIYO YUDEN CO., LTD.Inventors: Yuki TAKAHASHI, Hiroomi KANEKO, Hiroshi KAWAKAMI, Shinji TANIGUCHI
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Publication number: 20190007021Abstract: A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.Type: ApplicationFiled: June 14, 2018Publication date: January 3, 2019Applicant: TAIYO YUDEN CO., LTD.Inventors: Shinji TANIGUCHI, Hiroomi KANEKO, Hiroshi KAWAKAMI, Tokihiro NISHIHARA
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Publication number: 20170257076Abstract: A piezoelectric thin film resonator includes: lower and upper electrodes located on a substrate and facing each other; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, an outer outline of the upper piezoelectric film coinciding with or being located further out than an outer outline of a resonance region in a region surrounding the resonance region, the outer outline of the upper piezoelectric film being located further in than an outer outline of the lower piezoelectric film in the region; an insertion film interposed between the lower and upper piezoelectric films, located in an outer peripheral region within the resonance region, not located in a central region of the resonance region, and located on an upper surface of the lower piezoelectric film in the region; and a protective film located on the upper electrode in the resonance region, and located so as to cover an end face of the upper piezoelectric film and an upper surface of tType: ApplicationFiled: January 26, 2017Publication date: September 7, 2017Applicant: TAIYO YUDEN CO., LTD.Inventors: Hiroomi KANEKO, Hiroshi KAWAKAMI, Shinji TANIGUCHI, Tokihiro NISHIHARA, Tsuyoshi YOKOYAMA
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Patent number: 9716956Abstract: A piezoelectric thin film resonator includes: a lower electrode and an upper electrode facing each other across a piezoelectric film; an insertion film inserted into the piezoelectric film, located in at least a part of an outer peripheral region in a resonance region and outside the outer peripheral region, and not located in a center region of the resonance region; a protective film on the upper electrode and the piezoelectric film; and a wiring line connecting to the lower electrode and covering an outer periphery of the protective film in an extraction region of the lower electrode, wherein in the extraction region, an outer periphery of the insertion film is further out than an outer periphery of the upper electrode and further in than an outer periphery of the piezoelectric film, and the outer periphery of the protective film is further out than the outer periphery of the insertion film.Type: GrantFiled: April 29, 2016Date of Patent: July 25, 2017Assignee: TAIYO YUDEN CO., LTD.Inventors: Ryuichi Okamura, Hiroshi Kawakami, Hiroomi Kaneko, Shinji Taniguchi, Tsuyoshi Yokoyama
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Publication number: 20170207768Abstract: A piezoelectric thin film resonator includes: an acoustic reflection layer including an air gap or an acoustic mirror; lower and upper electrodes facing each other in a stacking direction, at least a part of each of the lower and upper electrodes being located on or above the acoustic reflection layer; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, at least a part of an end face of the piezoelectric film in a film thickness direction being located between outer outlines of the resonance region and the acoustic reflection layer in at least a part of a region surrounding a resonance region; and an insertion film inserted between the lower and upper piezoelectric films, located in at least a part of an outer peripheral region within the resonance region, and not located in a center region of the resonance region.Type: ApplicationFiled: November 21, 2016Publication date: July 20, 2017Applicant: TAIYO YUDEN CO., LTD.Inventors: Jiansong LIU, Tsuyoshi YOKOYAMA, Hiroomi KANEKO, Shinji TANIGUCHI, Tokihiro NISHIHARA
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Publication number: 20160353221Abstract: A piezoelectric thin film resonator includes: a lower electrode and an upper electrode facing each other across a piezoelectric film; an insertion film inserted into the piezoelectric film, located in at least a part of an outer peripheral region in a resonance region and outside the outer peripheral region, and not located in a center region of the resonance region; a protective film on the upper electrode and the piezoelectric film; and a wiring line connecting to the lower electrode and covering an outer periphery of the protective film in an extraction region of the lower electrode, wherein in the extraction region, an outer periphery of the insertion film is further out than an outer periphery of the upper electrode and further in than an outer periphery of the piezoelectric film, and the outer periphery of the protective film is further out than the outer periphery of the insertion film.Type: ApplicationFiled: April 29, 2016Publication date: December 1, 2016Applicant: TAIYO YUDEN CO., LTD.Inventors: Ryuichi OKAMURA, Hiroshi KAWAKAMI, Hiroomi KANEKO, Shinji TANIGUCHI, Tsuyoshi YOKOYAMA