Abstract: A printing apparatus includes a printing unit configured to print an image on a print medium, an acquiring unit configured to acquire temperature information of the printing unit, and a control unit configured to control the printing unit so as to start relative scanning in a case where a temperature that is indicated by the temperature information has reached a print permission temperature. The print permission temperature in a first print mode whose speed at a time of a constant speed in relative scanning is a first speed is a first temperature. The print permission temperature in a second print mode whose speed at the time of the constant speed is a second speed that is faster than the first speed is a second temperature that is lower than the first temperature.

Abstract: A printing apparatus includes a printing unit configured to print an image on a print medium, an acquiring unit configured to acquire temperature information of the printing unit, and a control unit configured to control the printing unit so as to start relative scanning in a case where a temperature that is indicated by the temperature information has reached a print permission temperature. The print permission temperature in a first print mode whose speed at a time of a constant speed in relative scanning is a first speed is a first temperature. The print permission temperature in a second print mode whose speed at the time of the constant speed is a second speed that is faster than the first speed is a second temperature that is lower than the first temperature.

Abstract: An active matrix substrate includes a thin film transistor, a pixel electrode, a transparent capacitor portion including the pixel electrode, and when viewed from a direction normal to the substrate, a drain contact region where a drain electrode and a semiconductor layer are in contact with each other in a drain opening portion does not overlap either a first contact region where a connecting electrode and the drain electrode are in contact with each other in the first opening portion or a second contact region where the pixel electrode and the connecting electrode are in contact with each other in the second opening portion, the entirety of the second contact region overlaps the first contact region, and the transparent capacitor portion at least partially overlaps the first contact region.

Abstract: A liquid crystal display includes: an active matrix substrate; an opposite substrate facing the active matrix substrate; and a liquid crystal layer provided between the active matrix substrate and the opposite substrate. The liquid crystal display includes a plurality of pixels. The active matrix substrate includes: a first substrate; a base coat layer; a plurality of TFTs; a plurality of scanning wirings; and a plurality of signal wirings. The active matrix substrate further includes a plurality of second light-shielding layers provided between the first substrate and the base coat layer. The base coat layer includes a silicon nitride layer.

Abstract: An active matrix substrate includes a thin film transistor, a pixel electrode, a transparent capacitor portion including the pixel electrode, and when viewed from a direction normal to the substrate, a drain contact region where a drain electrode and a semiconductor layer are in contact with each other in a drain opening portion does not overlap either a first contact region where a connecting electrode and the drain electrode are in contact with each other in the first opening portion or a second contact region where the pixel electrode and the connecting electrode are in contact with each other in the second opening portion, the entirety of the second contact region overlaps the first contact region, and the transparent capacitor portion at least partially overlaps the first contact region.

Abstract: A display substrate includes: a switching element including a pixel connection electrode composed of a first conductive film; a pixel electrode composed of a third conductive film and including a portion overlapping the pixel connection electrode; a pixel contact hole drilled through first, second, and third insulating films at a position overlapping the pixel connection electrode and the pixel electrode; a wiring composed of a second conductive film; a wiring connection portion including a portion overlapping the wiring; a first wiring contact hole drilled through the third insulating film at a position overlapping the wiring and the wiring connection portion; a touch lead-out wiring including a portion overlapping a section of the wiring connection portion not overlapping the wiring; and a second wiring contact hole drilled through the first to the third insulating films at a position overlapping the wiring connection portion and the lead-out wiring.

Abstract: A display substrate includes: a switching element including a pixel connection electrode composed of a first conductive film; a pixel electrode composed of a third conductive film and including a portion overlapping the pixel connection electrode; a pixel contact hole drilled through first, second, and third insulating films at a position overlapping the pixel connection electrode and the pixel electrode; a wiring composed of a second conductive film; a wiring connection portion including a portion overlapping the wiring; a first wiring contact hole drilled through the third insulating film at a position overlapping the wiring and the wiring connection portion; a lead-out wiring including a portion overlapping a section of the wiring connection portion not overlapping the wiring; and a second wiring contact hole drilled through the first to the third insulating films at a position overlapping the wiring connection portion and the lead-out wiring.

Abstract: A liquid crystal display includes: an active matrix substrate; an opposite substrate facing the active matrix substrate; and a liquid crystal layer provided between the active matrix substrate and the opposite substrate. The liquid crystal display includes a plurality of pixels. The active matrix substrate includes: a first substrate; a base coat layer; a plurality of TFTs; a plurality of scanning wirings; and a plurality of signal wirings. The active matrix substrate further includes a plurality of second light-shielding layers provided between the first substrate and the base coat layer. The base coat layer includes a silicon nitride layer.

Abstract: A semiconductor device includes at least one thin film transistor (100, 200), the at least one thin film transistor including a semiconductor layer (3A, 3B) which includes a channel region (31A, 31), a high-concentration impurity region, and a low-concentration impurity region (32A, 32B) which is located between the channel region and the high-concentration impurity region, a gate electrode (7A, 7B) provided on a gate insulating layer (5), an interlayer insulating layer (11) provided on the gate electrode, and a source electrode (8A, 8B) and a drain electrode (9A, 9B), wherein the interlayer insulating layer and the gate insulating layer have a contact hole extending to the semiconductor layer, at least one of the source electrode (8A, 8B) and the drain electrode (9A, 9B) being in contact with the high-concentration impurity region inside the contact hole, at a side wall of the contact hole, a side surface of the gate insulating layer is aligned with a side surface of the interlayer insulating layer, and at a

Abstract: A touch-panel-equipped display device includes display control elements formed on an active matrix substrate; a plurality of pixel electrodes formed on the active matrix substrate; a plurality of counter electrodes that are formed on the active matrix substrate, electrostatic capacitors being formed between the counter electrodes and the pixel electrodes; a control unit that supplies a touch driving signal to the counter electrodes so as to detect a touch position; and touch sensor lines for supplying the touch driving signal from the control unit to the counter electrodes. On a counter substrate, a color filter that includes at least blue color areas 51b, green color areas 51g, and red color areas 51r is provided, and at a boundary between the blue color area 51b and another color area of the color filter, the touch sensor line 22 is arranged so as to be offset toward the blue color area 51b side.

Abstract: A semiconductor device includes at least one thin film transistor (100, 200), the at least one thin film transistor including a semiconductor layer (3A, 3B) which includes a channel region (31A, 31), a high-concentration impurity region, and a low-concentration impurity region (32A, 32B) which is located between the channel region and the high-concentration impurity region, a gate electrode (7A, 7B) provided on a gate insulating layer (5), an interlayer insulating layer (11) provided on the gate electrode, and a source electrode (8A, 8B) and a drain electrode (9A, 9B), wherein the interlayer insulating layer and the gate insulating layer have a contact hole extending to the semiconductor layer, at least one of the source electrode (8A, 8B) and the drain electrode (9A, 9B) being in contact with the high-concentration impurity region inside the contact hole, at a side wall of the contact hole, a side surface of the gate insulating layer is aligned with a side surface of the interlayer insulating layer, and at a

Abstract: Disclosed is a semiconductor device 1000 including a substrate 1, a thin film diode 100 that is supported by the substrate 1 and has a first semiconductor layer 10 having a light-receiving region 10i, a thin film transistor 200 that is supported by the substrate 1 and has a second semiconductor layer 20, and a metal layer 22a that has an inclined surface 23 that is inclined to the surface of the substrate 1, in which the thin film diode 100 can detect light that enters the light-receiving region 10i and has a prescribed wavelength, in which both the first semiconductor layer 10 and the second semiconductor layer 20 are composed of the same semiconductor film, and in which the inclined surface 23 of the metal layer 22a faces at least a part of the side faces 3R and 3L of the first semiconductor layer 10. This constitution enables an increase in the amount of light absorbed by the thin film diode and an improvement in the effective light reception sensitivity of an optical sensor part.

Abstract: Disclosed is a display device that has a light detecting element (D1) disposed in a pixel region (1), an opening (a through hole) (19a) formed in an insulating film (19) that is disposed above the light detecting element (D1), and a transparent electrode (20) formed in the opening (19a), and that can reduce occurrence of leakage between the transparent electrode (20) and other wiring line (SL). Specifically disclosed is a display device that has an active matrix substrate (100) in which a first wiring line (SL) and a second wiring line (GL) are formed so as to cross each other, and a light detecting element (D1) disposed on a pixel region (1) in the active matrix substrate (100).

Abstract: A first thin film diode (100A) has a first semiconductor layer (10A) and a first light blocking layer (12A) disposed on the substrate side of the first semiconductor layer. A second thin film diode (100B) has a second semiconductor layer (10B) and a second light blocking layer (12B) disposed on the substrate side of the second semiconductor layer. An insulating film (14) is formed between the first semiconductor layer (10A) and the first light blocking layer (12A) and between the second semiconductor layer (10B) and the second light blocking layer (12B). A thickness D1 of a portion of the insulating film (14) positioned between the first semiconductor layer (10A) and the first light blocking layer (12A) is different from a thickness D2 of a portion of the insulating film (14) positioned between the second semiconductor layer (10B) and the second light blocking layer (12B).

Abstract: Disclosed is a display device that has a light detecting element (D1) disposed in a pixel region (1), an opening (a through hole) (19a) formed in an insulating film (19) that is disposed above the light detecting element (D1), and a transparent electrode (20) formed in the opening (19a), and that can reduce occurrence of leakage between the transparent electrode (20) and other wiring line (SL). Specifically disclosed is a display device that has an active matrix substrate (100) in which a first wiring line (SL) and a second wiring line (GL) are formed so as to cross each other, and a light detecting element (D1) disposed on a pixel region (1) in the active matrix substrate (100).

Abstract: Disclosed is a semiconductor device 1000 including a substrate 1, a thin film diode 100 that is supported by the substrate 1 and has a first semiconductor layer 10 having a light-receiving region 10i, a thin film transistor 200 that is supported by the substrate 1 and has a second semiconductor layer 20, and a metal layer 22a that has an inclined surface 23 that is inclined to the surface of the substrate 1, in which the thin film diode 100 can detect light that enters the light-receiving region 10i and has a prescribed wavelength, in which both the first semiconductor layer 10 and the second semiconductor layer 20 are composed of the same semiconductor film, and in which the inclined surface 23 of the metal layer 22a faces at least a part of the side faces 3R and 3L of the first semiconductor layer 10. This constitution enables an increase in the amount of light absorbed by the thin film diode and an improvement in the effective light reception sensitivity of an optical sensor part.

Abstract: Each pixel 105 includes a display part 111 for displaying an image and a sensor 112 for detecting light. The sensors 112 of the pixels 105 that are systematically pre-selected from a plurality of pixels 105 are provided with a photodiode 115 and a light-shielding film 116 in a manner such that the light-shielding film 116 is positioned below the photodiode 115 so as to overlap the photodiode 115 when viewed from the direction perpendicular to the active matrix substrate, and wiring lines 117 and bus lines 118 that electrically connect all light-shielding films 116 to each other are provided so as to avoid the display parts 111. This makes it possible to provide an active matrix substrate, a glass substrate, a liquid crystal panel, and a liquid crystal display device that can reduce the occurrence of damage due to electrostatic discharge when they are equipped with a light-receiving element and a light-shielding film to achieve optical sensor function.

Abstract: A first thin film diode (100A) has a first semiconductor layer (10A) and a first light blocking layer (12A) disposed on the substrate side of the first semiconductor layer. A second thin film diode (100B) has a second semiconductor layer (10B) and a second light blocking layer (12B) disposed on the substrate side of the second semiconductor layer. An insulating film (14) is formed between the first semiconductor layer (10A) and the first light blocking layer (12A) and between the second semiconductor layer (10B) and the second light blocking layer (12B). A thickness D1 of a portion of the insulating film (14) positioned between the first semiconductor layer (10A) and the first light blocking layer (12A) is different from a thickness D2 of a portion of the insulating film (14) positioned between the second semiconductor layer (10B) and the second light blocking layer (12B).

Abstract: A display panel substrate includes a plurality of pixels, a pixel in the display panel substrate including a PIN diode for conducting therethrough a different electric current in accordance with an amount of light received by the light receiving element, a first inorganic insulating film formed on the PIN diode, a line formed on or above the first inorganic insulating film and electrically connected to the PIN diode, an organic insulating film formed on or above the line, a transparent pixel electrode formed on the organic insulating film, and a transparent cover electrode provided at such a position that the transparent electrode is located between the organic insulating film and the first inorganic insulating film and formed to cover at least a part of an I-layer of the PIN diode.

Abstract: An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting the ions, generated in the ion source 12, from the ion source 12 and accelerating the ions toward a target. The ion source 12 includes an inlet port 14 to introduce a gas including a dopant element, a filament 15 emitting thermo electrons, and an anode electrode 17 to produce an arc discharge between the filament and itself. The ion source 12 decomposes the gas through the arc discharge, thereby generating ions including the dopant element. The ion doping system controls the arc discharge such that a constant amount of arc current flows between the filament and the anode electrode.