Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)??(1) where, Cc is a count number of a peak of a (001?) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, 1? is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h?00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h? is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001?) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h?00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)??(1) where, Cc is a count number of a peak of a (001?) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, 1? is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h?00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h? is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001?) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h?00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)??(1) where, Cc is a count number of a peak of a (001?)face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l? is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h?00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h? is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001?) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h?00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

Abstract: An inkjet recording apparatus is provided that is capable of stably maintaining image quality by preventing the degradation in image quality due to a rotational body for holding down a recording medium. The inkjet recording apparatus includes a linked-up head having a plurality of short chips arranged in a staggered arrangement in the width direction of the recording medium. The rotational bodies for holding the floating of the recording medium on the downstream side of the linked-up head in the conveying direction are arranged in the width direction of the recording medium within a range of the short chip that ejected ink earlier on the recording medium.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: An inkjet recording apparatus is provided that is capable of stably maintaining image quality by preventing the degradation in image quality due to a rotational body for holding down a recording medium. The inkjet recording apparatus includes a linked-up head having a plurality of short chips arranged in a staggered arrangement in the width direction of the recording medium. The rotational bodies for holding the floating of the recording medium on the downstream side of the linked-up head in the conveying direction are arranged in the width direction of the recording medium within a range of the short chip that ejected ink earlier on the recording medium.

Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)??(1) where, Cc is a count number of a peak of a (001?) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l? is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h?00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h? is a natural number selected so that Cc becomes maximum); WC is a half-value width of a peak of the (001?) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h?00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)??(1) where, Cc is a count number of a peak of a (00l?) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l? is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h?00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h? is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l?) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h?00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (00l) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2:

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: The present invention relates to a toner which forms a high quality image, which is stable in various environments, i.e. under high humidity, or low temperature and low humidity conditions, and has a fine particle diameter as well as a sharp particle size distribution, and to a process for producing the same. The toner contains at least a binder resin and a colorant, and has (i) a number average particle diameter of from 0.5 to 6.0 .mu.m, (ii) the coefficient of variation of number distribution of not more than 20%, and (iii) a methanol-soluble resin component in an amount of 0.01-10% based on the weight of the toner, and the methanol-soluble resin component contains a polymer composition having an organic acid group, and an acid value of from 50 to 600 mgKOH/g.

Abstract: Disclosed herein is a recording medium comprising a base material and an ink-receiving layer provided on the base material, wherein the ink-receiving layer comprises a high-water-absorptive material obtained by grafting, on a water-absorptive polymer, an inorganic oxide formed from an inorganic alkoxide represented by the formula(R.sub.2).sub.n --M--(OR.sub.1).sub.m-nwherein M denotes an element selected from the group consisting of Si, Al, Ti, Zr, Ca, Fe, V, Sn, Be, B and P, m is a valence of M, n is an integer of 1 or 2, R.sub.1 denotes an alkyl group having 1 to 4 carbon atoms which may have a substituent group, and R.sub.2 denotes an alkyl group having 1 to 4 carbon atoms or a phenyl group, each of which may have a substituent group.

Abstract: A carrier for use in electrophotography has carrier particles. The carrier particles each comprise a carrier core particle and a resin for coating the carrier core particle and having a resistivity of 10.sup.10 .OMEGA..multidot.cm or above under conditions of a temperature of 23.degree. C. and a humidity of 50% RH. The carrier particles have an average particle diameter of not larger than 100 .mu.m and a resistivity of 10.sup.10 .OMEGA..multidot.cm or above. The carrier particles comprise not less than 80% by number of resin-coated carrier particles whose carrier core particles are each coated with a resin in a coverage of not less than 90%.