Abstract: A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.

Abstract: A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and after the forming of the first puncture, forming a second puncture which at least partially overlaps the first puncture by irradiating, with a second pulse of the light beam, a second position on the surface of the sample positioned away from the first position in a first direction. The second puncture has a tip which is positioned inside the sample and which is bent in a direction opposite to the first direction.

Abstract: A method of manufacturing a semiconductor laser element includes: first dividing a substrate to produce a divided substrate including waveguides spaced apart in a second direction, the substrate being a substrate on which a nitride-based semiconductor laser stacking structure including waveguides extending in the first direction is formed; cleaving the divided substrate in the second direction to produce a semiconductor laser element including waveguides; and second dividing the semiconductor laser element in the first direction to remove an end portion of the semiconductor laser element in the second direction. The cleaving includes: forming, on the divided substrate, a cleavage lead-in groove extending in the second direction; and cleaving the divided substrate using the cleavage lead-in groove. In the second dividing, a portion including the cleavage lead-in groove is removed as the end portion of the semiconductor laser element in the second direction.

Abstract: A different-material fastener fastens together a first member and a second member formed from a material different from a material of the first member. The different-material fastener includes a rivet and a stud. The rivet includes a shank configured to be pressed into the first member, and a first head disposed at one end of the shank. The first head has a diameter larger than a diameter of the shank. The stud includes a shaft protruding from a center of an upper surface of the first head, and a second head that is disposed at an end of the shaft. The second head has a diameter larger than a diameter of the shaft and smaller than the diameter of the first head.

Abstract: A work operation assurance system includes an information projector, an imaging unit, and a processor. The information projector projects work information on a work object. The imaging unit obtains image data on an operator performing a work operation on the work object. The processor includes an artificial intelligence component that determines whether the work operation performed by the operator is appropriate based on the image data obtained by the imaging unit and work operation information preliminarily learned by the artificial intelligence component. In a case where the artificial intelligence component determines that the work operation performed by the operator is inappropriate, the processor causes the information projector to project a notification indicating that the work operation performed by the operator is inappropriate.

Abstract: A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.

Abstract: A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and after the forming of the first puncture, forming a second puncture which at least partially overlaps the first puncture by irradiating, with a second pulse of the light beam, a second position on the surface of the sample positioned away from the first position in a first direction. The second puncture has a tip which is positioned inside the sample and which is bent in a direction opposite to the first direction.

Abstract: A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.

Abstract: A method for manufacturing a semiconductor memory device includes forming an isolation layer adjacent a diffusion region over a substrate that also has a stacked gate region. A gate oxide layer is formed over the gate region; a first conductive layer over the isolation and gate oxide layers and the diffusion region; a nitride layer over the first conductive layer, the nitride layer having an opening at the isolation layer; and an oxide region in the first conductive layer using the nitride layer as a mask. After removing the nitride layer and the silicon oxide region, an interelectrode dielectric layer is formed over the first conductive layer, and a second conductive layer is formed over the interelectrode dielectric layer. Then, the interelectrode dielectric layer and the first conductive layer over the diffusion portion are removed and a diffusion layer is formed in the substrate of the diffusion portion.

Abstract: A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.

Abstract: A method for manufacturing a semiconductor memory device includes forming an isolation layer over a semiconductor substrate having a stacked gate region and a diffusion region, the isolation layer is formed adjacent the diffusion region of the semiconductor substrate.

Abstract: The present invention provides a fender rearview mirror for an automotive vehicle which can be later attached in an easy and quick manner by a nonprofessional even in a vehicle using a door sideview mirror and satisfies a safety standard, such door sideview mirror being constituted by a mirror portion (1), a mounting seat portion (2) and a leg portion (3) therebetween, the mirror portion (1) forming a cylindrical base portion (8) which has an open lower portion on one side of a mirror cover (4) commonly serving as a hood; the mounting seat portion (2) can be gripped and fixed by a fastening bolt (13) with holding a frontward side edge portion (10) of a bonnet (9); the leg portion (3) rotatably engaging an upper portion with the cylindrical base portion (8) of the mirror portion (1) and forming a lower end surface in a cylindrical shape supported on the mounting seat portion (2); a tension coil spring (14) being provided so that an upper end portion (15) thereof may be engaged with an integral portion (17) of

Abstract: An aseismatic device for a door comprises a main portion and a roller-bearing plate. The main portion includes a plate capable of being attached to one upper corner of one side door, which is to be closed and locked. The plate is provided with a longitudinally rotatable roller in such a manner that it projects somewhat upwardly and with a laterally rotatable roller in such a manner that it projects somewhat laterally.The roller-bearing plate is capable of being attached to one corner portion of a door frame corresponding to said main portion, and has a pair of planes for bearing said rollers.The main portion and the roller-bearing plate are arranged in such a manner that the rollers are normally not in contact with said bearing planes.