Abstract: A flicker noise detecting method that shortens the time for detecting flicker noise. The method sets two of a plurality of horizontal lines forming a frame as average brightness calculation regions that are separated from each other by the predetermined number of the horizontal lines, calculates an average brightness of the two average brightness calculation regions for each of three frames, multiplies each average brightness by a product sum calculation coefficient, and adds the products to generate a sum and generate a detection signal of flicker noise based on the sum. The product sum calculation coefficient is obtained by plotting one cycle of a sine wave and one cycle of a cosine wave at intervals of ?/3.

Abstract: A semiconductor integrated circuit includes a differential calculating unit which obtains a differential between a value of a pixel of interest and values of surrounding pixels contained in an image signal supplied from an image sensor, a dead-zone generating unit which defines a predetermined range of pixel values, and a comparison unit which checks whether the differential falls outside the predetermined range, wherein contour enhancement is applied to the pixel of interest in response to a determination by the comparison unit that the differential falls outside the predetermined range.

Abstract: A semiconductor integrated circuit includes a check unit which compares a value of a pixel of interest with values of neighboring pixels contained in an image signal supplied from an image sensor, and determines based on the comparison whether the pixel of interest is defective, and a defect correcting unit which corrects the value of the pixel of interest by using values of surrounding pixels in response to the determination by the check unit that the pixel of interest is defective.

Abstract: A resolution conversion method and a pixel data processing circuit for a single-plate type color image sensor has been disclosed, in which resolution conversion processing and simultaneous processing can be performed with a simple configuration, an image of high sharpness can be obtained without degradation of resolution, and the pixel positions of respective colors coincide with each other. Resolution conversion processing that converts color data of each pixel output from a single-plate-type color-image sensor into data of a predetermined resolution and simultaneous processing that processes the color data so that the pixel positions of respective colors coincide with each other are performed simultaneously in the same circuit.

Abstract: A solid-state image sensor able to adjust sensitivity in a wide range without causing flicker or stripes, even when the illumination source is a fluorescent lamp, has been disclosed. The solid-state image sensor comprises: plural pixels and; a gain variable amplifier that amplifies signals sequentially read from the plural pixels at a fixed cycle time and the amplification factor of which can be varied, and the storage time of the pixel can be set to an arbitrary value, wherein the sensor comprises: a brightness/illumination flicker detection section; and a control section that varies the storage time step by step to one of plural flicker-less times in accordance with the detected brightness and the illumination flicker as well as varying the amplification factor of the amplifier in accordance with the detected brightness and the storage time.

Abstract: It is an object of the invention to provide a method of reducing flicker noises in an X-Y address type solid-state image pickup device for reducing flicker noises generated by a fluorescent light for room illumination when taking a picture in door.

Abstract: A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.

Abstract: An infrared detection device has a substrate with a plurality of hollow mesas and a pyroelectric thin film formed on the surface having the mesas.