Patents by Inventor Hiroshi Echizen

Hiroshi Echizen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210378253
    Abstract: A high-protein milk raw material having a good flavor is provided. The liquid high-protein milk raw material of the present invention can be produced by preparing a milk fluid from the milk raw material and subjecting the milk fluid to concentration processing using a nanofiltration membrane.
    Type: Application
    Filed: October 28, 2019
    Publication date: December 9, 2021
    Applicant: MEIJI CO., LTD.
    Inventors: Yuki KAWAMURA, Mizue SAITO, Hiroshi ECHIZEN
  • Publication number: 20210378252
    Abstract: A high-protein milk raw material having a good flavor is provided. The liquid high-protein milk raw material of the present invention can be produced by preparing a milk fluid from the milk raw material and subjecting the milk fluid to treatment in contact with activated carbon.
    Type: Application
    Filed: October 28, 2019
    Publication date: December 9, 2021
    Applicant: MEIJI CO., LTD.
    Inventors: Yuki KAWAMURA, Mizue SAITO, Hiroshi ECHIZEN
  • Patent number: 9312289
    Abstract: A light guide portion includes a low refractive index portion and a high refractive index portion. The low refractive index portion has a refractive index equal to or lower than that of an insulating layer. The high refractive index portion has a refractive index higher than that of the low refractive index portion. The low refractive index portion is located above a separating portion, and is sandwiched by the high refractive index portion in a first direction. A width in the first direction of the low refractive index portion at a first position distant from the separating portion in a second direction is narrower than a width in the first direction of the low refractive index portion at a second position closer to the separating portion than the first position in the second direction.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: April 12, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Echizen, Mineo Shimotsusa
  • Publication number: 20150364511
    Abstract: A light guide portion includes a low refractive index portion and a high refractive index portion. The low refractive index portion has a refractive index equal to or lower than that of an insulating layer. The high refractive index portion has a refractive index higher than that of the low refractive index portion. The low refractive index portion is located above a separating portion, and is sandwiched by the high refractive index portion in a first direction. A width in the first direction of the low refractive index portion at a first position distant from the separating portion in a second direction is narrower than a width in the first direction of the low refractive index portion at a second position closer to the separating portion than the first position in the second direction.
    Type: Application
    Filed: June 15, 2015
    Publication date: December 17, 2015
    Inventors: Hiroshi Echizen, Mineo Shimotsusa
  • Publication number: 20150272151
    Abstract: A dairy product-like processed food which enables rice to be consumed and a method of manufacturing the same are provided. The dairy product-like processed food contains rice. This processed food may be a processed food in which rice slurry containing ground rice and a dispersion medium, rice flour, glutinous rice flour, or top-grade rice flour is mixed therein. The method of manufacturing the dairy product-like processed food includes a step of wet-grinding rice, and a step of mixing the rice slurry produced by the wet grinding with a predetermined raw material of the processed food.
    Type: Application
    Filed: July 30, 2013
    Publication date: October 1, 2015
    Inventors: Yoshiharu Narahara, Hiroshi Horiuchi, Hiroshi Echizen, Yutaka Kitamura
  • Patent number: 7641382
    Abstract: In a deposited-film formation apparatus or process having the means or steps of evacuating the inside of an inside-evacuatable chamber through an evacuation piping by an evacuation means, feeding a material gas into the chamber while evacuating the inside of the chamber, and applying a high-frequency power to form a deposited film on a substrate disposed inside the chamber, a leak is detected on the basis of a measured value of a temperature sensor which detects the heat of reaction that is generated when the material gas fed into the chamber reacts with oxygen contained in air having entered from the outside, so as to be able to stop the material gas feeding. In deposited-film formation apparatus or processes making use of spontaneously ignitable gases, the leak can quickly be detected when air enters the chamber because of any unexpected accident such as a break of piping.
    Type: Grant
    Filed: November 10, 2005
    Date of Patent: January 5, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Izawa, Hiroshi Echizen, Hirokazu Ohtoshi, Masatoshi Tanaka
  • Publication number: 20090136620
    Abstract: In order to provide fermented milk with excellent hardness and flavor and a method for producing the same, the method for producing fermented milk uses yogurt mix in which 0.3% by weight or more ?-lactalbumin is added to starting milk mixture, yogurt mix containing whey protein concentrate in which ?-lactalbumin is contained in the amount of 60% by weight based on the protein, yogurt mix in which 0.4% by weight or more ?-lactoglobulin is added to starting milk mixture, or yogurt mix containing whey protein concentrate in which ?-lactoglobulin is contained in the amount of 65% by weight or more based on the protein.
    Type: Application
    Filed: September 15, 2006
    Publication date: May 28, 2009
    Applicant: MEIJI DAIRIES CORPORATION
    Inventors: Hiroshi Horiuchi, Hideo Ohtomo, Hiroshi Echizen
  • Patent number: 7288140
    Abstract: In a wet-process gas treatment method of treating an acid gas by using at least two treating columns connected in series, a ratio of the concentration of an acid gas at an outlet to a concentration of the acid gas at an inlet of a first treating column is set higher than a ratio of the concentration of the acid gas at an outlet to the concentration of acid gas at an inlet of at least one of the other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from being blocked.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: October 30, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Echizen, Hiroshi Izawa
  • Publication number: 20060068081
    Abstract: In a deposited-film formation apparatus or process having the means or steps of evacuating the inside of an inside-evacuatable chamber through an evacuation piping by an evacuation means, feeding a material gas into the chamber while evacuating the inside of the chamber, and applying a high-frequency power to form a deposited film on a substrate disposed inside the chamber, a leak is detected on the basis of a measured value of a temperature sensor which detects the heat of reaction that is generated when the material gas fed into the chamber reacts with oxygen contained in air having entered from the outside, so as to be able to stop the material gas feeding. In deposited-film formation apparatus or processes making use of spontaneously ignitable gases, the leak can quickly be detected when air enters the chamber because of any unexpected accident such as a break of piping.
    Type: Application
    Filed: November 10, 2005
    Publication date: March 30, 2006
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hiroshi Izawa, Hiroshi Echizen, Hirokazu Ohtoshi, Masatoshi Tanaka
  • Patent number: 6930025
    Abstract: In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies: 2?(second film formation rate)/(first film formation rate)?100; which provides a process for producing a transparent conductive film by a deposition process advantageous for cost reduction, which can form in a short time a transparent conductive film having an uneven surface profile with a high light-confining effect, and can bring about an improvement in photovoltaic performance and enjoy a high mass productivity when applied to the formation of multi-layer structure of photovoltaic devices.
    Type: Grant
    Filed: January 31, 2002
    Date of Patent: August 16, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Akiya Nakayama, Hiroshi Echizen, Yasuyoshi Takai, Naoto Okada, Shigeo Kiso
  • Publication number: 20050081720
    Abstract: In a wet-process gas treatment method of treating an acid gas by using at least two treating columns connected in series, a ratio of the concentration of an acid gas at an outlet to a concentration of the acid gas at an inlet of a first treating column is set higher than a ratio of the concentration of the acid gas at an outlet to the concentration of acid gas at an inlet of at least one of the other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from being blocked.
    Type: Application
    Filed: October 8, 2004
    Publication date: April 21, 2005
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hiroshi Echizen, Hiroshi Izawa
  • Patent number: 6860974
    Abstract: There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: March 1, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Echizen, Yasuyoshi Takai, Akiya Nakayama
  • Patent number: 6821317
    Abstract: In a wet-process gas treatment method of treating an acid gas by using at least two treating columns connected in series, a ratio of the concentration of an acid gas at an outlet to a concentration of the acid gas at an inlet of a first treating column is set higher than a ratio of the concentration of the acid gas at an outlet to the concentration of acid gas at an inlet of at least one of the other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from being blocked.
    Type: Grant
    Filed: December 18, 2002
    Date of Patent: November 23, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Echizen, Hiroshi Izawa
  • Patent number: 6783640
    Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: August 31, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshihiro Yamashita, Hiroshi Echizen, Yasuyoshi Takai, Hidetoshi Tsuzuki
  • Patent number: 6740210
    Abstract: Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.
    Type: Grant
    Filed: October 11, 2001
    Date of Patent: May 25, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Echizen, Toshihiro Yamashita
  • Publication number: 20030207021
    Abstract: In a deposited-film formation apparatus or process having the means or steps of evacuating the inside of an inside-evacuatable chamber through an evacuation piping by an evacuation means, feeding a material gas into the chamber while evacuating the inside of the chamber, and applying a high-frequency power to form a deposited film on a substrate disposed inside the chamber, a leak is detected on the basis of a measured value of a temperature sensor which detects the heat of reaction that is generated when the material gas fed into the chamber reacts with oxygen contained in air having entered from the outside, so as to be able to stop the material gas feeding.
    Type: Application
    Filed: April 19, 2001
    Publication date: November 6, 2003
    Inventors: Hiroshi Izawa, Hiroshi Echizen, Hirokazu Ohtoshi, Masatoshi Tanaka
  • Publication number: 20030116018
    Abstract: In a wet-process gas treatment method of treating an acid gas by means of at least two treating columns connected in series, ratio of concentration of acid gas at an outlet to concentration of acid gas at an inlet, of a first treating column is set higher than ratio of concentration of acid gas at an outlet to concentration of acid gas at an inlet, of at least one of other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from their blockage.
    Type: Application
    Filed: December 18, 2002
    Publication date: June 26, 2003
    Inventors: Hiroshi Echizen, Hiroshi Izawa
  • Publication number: 20030085116
    Abstract: There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.
    Type: Application
    Filed: June 28, 2002
    Publication date: May 8, 2003
    Inventors: Hiroshi Echizen, Yasuyoshi Takai, Akiya Nakayama
  • Publication number: 20020157703
    Abstract: In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies:
    Type: Application
    Filed: January 31, 2002
    Publication date: October 31, 2002
    Inventors: Akiya Nakayama, Hiroshi Echizen, Yasuyoshi Takai, Naoto Okada, Shigeo Kiso
  • Publication number: 20020134670
    Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.
    Type: Application
    Filed: January 18, 2002
    Publication date: September 26, 2002
    Inventors: Hiroshi Echizen, Yasuyoshi Takai, Hidetoshi Tsuzuki, Toshihiro Yamashita