Patents by Inventor Hiroshi Echizen
Hiroshi Echizen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210378253Abstract: A high-protein milk raw material having a good flavor is provided. The liquid high-protein milk raw material of the present invention can be produced by preparing a milk fluid from the milk raw material and subjecting the milk fluid to concentration processing using a nanofiltration membrane.Type: ApplicationFiled: October 28, 2019Publication date: December 9, 2021Applicant: MEIJI CO., LTD.Inventors: Yuki KAWAMURA, Mizue SAITO, Hiroshi ECHIZEN
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Publication number: 20210378252Abstract: A high-protein milk raw material having a good flavor is provided. The liquid high-protein milk raw material of the present invention can be produced by preparing a milk fluid from the milk raw material and subjecting the milk fluid to treatment in contact with activated carbon.Type: ApplicationFiled: October 28, 2019Publication date: December 9, 2021Applicant: MEIJI CO., LTD.Inventors: Yuki KAWAMURA, Mizue SAITO, Hiroshi ECHIZEN
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Patent number: 9312289Abstract: A light guide portion includes a low refractive index portion and a high refractive index portion. The low refractive index portion has a refractive index equal to or lower than that of an insulating layer. The high refractive index portion has a refractive index higher than that of the low refractive index portion. The low refractive index portion is located above a separating portion, and is sandwiched by the high refractive index portion in a first direction. A width in the first direction of the low refractive index portion at a first position distant from the separating portion in a second direction is narrower than a width in the first direction of the low refractive index portion at a second position closer to the separating portion than the first position in the second direction.Type: GrantFiled: June 15, 2015Date of Patent: April 12, 2016Assignee: Canon Kabushiki KaishaInventors: Hiroshi Echizen, Mineo Shimotsusa
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Publication number: 20150364511Abstract: A light guide portion includes a low refractive index portion and a high refractive index portion. The low refractive index portion has a refractive index equal to or lower than that of an insulating layer. The high refractive index portion has a refractive index higher than that of the low refractive index portion. The low refractive index portion is located above a separating portion, and is sandwiched by the high refractive index portion in a first direction. A width in the first direction of the low refractive index portion at a first position distant from the separating portion in a second direction is narrower than a width in the first direction of the low refractive index portion at a second position closer to the separating portion than the first position in the second direction.Type: ApplicationFiled: June 15, 2015Publication date: December 17, 2015Inventors: Hiroshi Echizen, Mineo Shimotsusa
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Publication number: 20150272151Abstract: A dairy product-like processed food which enables rice to be consumed and a method of manufacturing the same are provided. The dairy product-like processed food contains rice. This processed food may be a processed food in which rice slurry containing ground rice and a dispersion medium, rice flour, glutinous rice flour, or top-grade rice flour is mixed therein. The method of manufacturing the dairy product-like processed food includes a step of wet-grinding rice, and a step of mixing the rice slurry produced by the wet grinding with a predetermined raw material of the processed food.Type: ApplicationFiled: July 30, 2013Publication date: October 1, 2015Inventors: Yoshiharu Narahara, Hiroshi Horiuchi, Hiroshi Echizen, Yutaka Kitamura
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Patent number: 7641382Abstract: In a deposited-film formation apparatus or process having the means or steps of evacuating the inside of an inside-evacuatable chamber through an evacuation piping by an evacuation means, feeding a material gas into the chamber while evacuating the inside of the chamber, and applying a high-frequency power to form a deposited film on a substrate disposed inside the chamber, a leak is detected on the basis of a measured value of a temperature sensor which detects the heat of reaction that is generated when the material gas fed into the chamber reacts with oxygen contained in air having entered from the outside, so as to be able to stop the material gas feeding. In deposited-film formation apparatus or processes making use of spontaneously ignitable gases, the leak can quickly be detected when air enters the chamber because of any unexpected accident such as a break of piping.Type: GrantFiled: November 10, 2005Date of Patent: January 5, 2010Assignee: Canon Kabushiki KaishaInventors: Hiroshi Izawa, Hiroshi Echizen, Hirokazu Ohtoshi, Masatoshi Tanaka
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Publication number: 20090136620Abstract: In order to provide fermented milk with excellent hardness and flavor and a method for producing the same, the method for producing fermented milk uses yogurt mix in which 0.3% by weight or more ?-lactalbumin is added to starting milk mixture, yogurt mix containing whey protein concentrate in which ?-lactalbumin is contained in the amount of 60% by weight based on the protein, yogurt mix in which 0.4% by weight or more ?-lactoglobulin is added to starting milk mixture, or yogurt mix containing whey protein concentrate in which ?-lactoglobulin is contained in the amount of 65% by weight or more based on the protein.Type: ApplicationFiled: September 15, 2006Publication date: May 28, 2009Applicant: MEIJI DAIRIES CORPORATIONInventors: Hiroshi Horiuchi, Hideo Ohtomo, Hiroshi Echizen
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Patent number: 7288140Abstract: In a wet-process gas treatment method of treating an acid gas by using at least two treating columns connected in series, a ratio of the concentration of an acid gas at an outlet to a concentration of the acid gas at an inlet of a first treating column is set higher than a ratio of the concentration of the acid gas at an outlet to the concentration of acid gas at an inlet of at least one of the other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from being blocked.Type: GrantFiled: October 8, 2004Date of Patent: October 30, 2007Assignee: Canon Kabushiki KaishaInventors: Hiroshi Echizen, Hiroshi Izawa
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Publication number: 20060068081Abstract: In a deposited-film formation apparatus or process having the means or steps of evacuating the inside of an inside-evacuatable chamber through an evacuation piping by an evacuation means, feeding a material gas into the chamber while evacuating the inside of the chamber, and applying a high-frequency power to form a deposited film on a substrate disposed inside the chamber, a leak is detected on the basis of a measured value of a temperature sensor which detects the heat of reaction that is generated when the material gas fed into the chamber reacts with oxygen contained in air having entered from the outside, so as to be able to stop the material gas feeding. In deposited-film formation apparatus or processes making use of spontaneously ignitable gases, the leak can quickly be detected when air enters the chamber because of any unexpected accident such as a break of piping.Type: ApplicationFiled: November 10, 2005Publication date: March 30, 2006Applicant: CANON KABUSHIKI KAISHAInventors: Hiroshi Izawa, Hiroshi Echizen, Hirokazu Ohtoshi, Masatoshi Tanaka
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Patent number: 6930025Abstract: In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies: 2?(second film formation rate)/(first film formation rate)?100; which provides a process for producing a transparent conductive film by a deposition process advantageous for cost reduction, which can form in a short time a transparent conductive film having an uneven surface profile with a high light-confining effect, and can bring about an improvement in photovoltaic performance and enjoy a high mass productivity when applied to the formation of multi-layer structure of photovoltaic devices.Type: GrantFiled: January 31, 2002Date of Patent: August 16, 2005Assignee: Canon Kabushiki KaishaInventors: Akiya Nakayama, Hiroshi Echizen, Yasuyoshi Takai, Naoto Okada, Shigeo Kiso
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Publication number: 20050081720Abstract: In a wet-process gas treatment method of treating an acid gas by using at least two treating columns connected in series, a ratio of the concentration of an acid gas at an outlet to a concentration of the acid gas at an inlet of a first treating column is set higher than a ratio of the concentration of the acid gas at an outlet to the concentration of acid gas at an inlet of at least one of the other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from being blocked.Type: ApplicationFiled: October 8, 2004Publication date: April 21, 2005Applicant: CANON KABUSHIKI KAISHAInventors: Hiroshi Echizen, Hiroshi Izawa
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Patent number: 6860974Abstract: There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.Type: GrantFiled: June 28, 2002Date of Patent: March 1, 2005Assignee: Canon Kabushiki KaishaInventors: Hiroshi Echizen, Yasuyoshi Takai, Akiya Nakayama
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Patent number: 6821317Abstract: In a wet-process gas treatment method of treating an acid gas by using at least two treating columns connected in series, a ratio of the concentration of an acid gas at an outlet to a concentration of the acid gas at an inlet of a first treating column is set higher than a ratio of the concentration of the acid gas at an outlet to the concentration of acid gas at an inlet of at least one of the other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from being blocked.Type: GrantFiled: December 18, 2002Date of Patent: November 23, 2004Assignee: Canon Kabushiki KaishaInventors: Hiroshi Echizen, Hiroshi Izawa
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Patent number: 6783640Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.Type: GrantFiled: January 18, 2002Date of Patent: August 31, 2004Assignee: Canon Kabushiki KaishaInventors: Toshihiro Yamashita, Hiroshi Echizen, Yasuyoshi Takai, Hidetoshi Tsuzuki
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Patent number: 6740210Abstract: Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.Type: GrantFiled: October 11, 2001Date of Patent: May 25, 2004Assignee: Canon Kabushiki KaishaInventors: Hiroshi Echizen, Toshihiro Yamashita
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Publication number: 20030207021Abstract: In a deposited-film formation apparatus or process having the means or steps of evacuating the inside of an inside-evacuatable chamber through an evacuation piping by an evacuation means, feeding a material gas into the chamber while evacuating the inside of the chamber, and applying a high-frequency power to form a deposited film on a substrate disposed inside the chamber, a leak is detected on the basis of a measured value of a temperature sensor which detects the heat of reaction that is generated when the material gas fed into the chamber reacts with oxygen contained in air having entered from the outside, so as to be able to stop the material gas feeding.Type: ApplicationFiled: April 19, 2001Publication date: November 6, 2003Inventors: Hiroshi Izawa, Hiroshi Echizen, Hirokazu Ohtoshi, Masatoshi Tanaka
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Publication number: 20030116018Abstract: In a wet-process gas treatment method of treating an acid gas by means of at least two treating columns connected in series, ratio of concentration of acid gas at an outlet to concentration of acid gas at an inlet, of a first treating column is set higher than ratio of concentration of acid gas at an outlet to concentration of acid gas at an inlet, of at least one of other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from their blockage.Type: ApplicationFiled: December 18, 2002Publication date: June 26, 2003Inventors: Hiroshi Echizen, Hiroshi Izawa
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Publication number: 20030085116Abstract: There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.Type: ApplicationFiled: June 28, 2002Publication date: May 8, 2003Inventors: Hiroshi Echizen, Yasuyoshi Takai, Akiya Nakayama
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Publication number: 20020157703Abstract: In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies:Type: ApplicationFiled: January 31, 2002Publication date: October 31, 2002Inventors: Akiya Nakayama, Hiroshi Echizen, Yasuyoshi Takai, Naoto Okada, Shigeo Kiso
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Publication number: 20020134670Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.Type: ApplicationFiled: January 18, 2002Publication date: September 26, 2002Inventors: Hiroshi Echizen, Yasuyoshi Takai, Hidetoshi Tsuzuki, Toshihiro Yamashita