Abstract: A power supply unit for an aerosol generating device includes a power supply, a heater connector connected to a heater, a voltage conversion IC, a circuit board, a capacitor, a first ground provided inside the circuit board and connected to the other end of the capacitor, a second ground provided inside the circuit board, insulated from the first ground inside the circuit board, and connected to the detection terminal, and a common ground configured to electrically connect the first ground and the second ground. On the second surface, no electronic component is provided in a common ground projection region overlapping with the common ground when viewed from a direction orthogonal to the circuit board.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: This inhalation device is provided with: a power source unit for supplying power; a heating unit for using power supplied from the power source unit to heat a substrate containing an aerosol source; a measurement unit for measuring a measurement value corresponding to the temperature of the heating unit; an operation unit, which is different from the heating unit, that runs on power supplied from the power source unit; and a control unit for controlling operation of the heating unit on the basis of heating settings stipulating a time series transition in a target temperature that is a target value for the temperature of the heating unit. The control unit implements correction processing to correct the measurement value in response to the start of power supply to the operation unit from the power source unit.

Abstract: A power supply unit for an aerosol generation device that generates an aerosol by heating an aerosol source, the power supply unit including: a power supply; a connector electrically connectable to an external power supply; a first load; a charging IC including an input terminal connected to the connector, a charging terminal connected to the power supply, and an output terminal connected to the first load, and configured to convert electric power input to the input terminal and output the converted electric power from the charging terminal; and a discharge path configured to connect the power supply and a second load without passing through the charging IC, in which the charging IC is configured to supply electric power input from the power supply to the charging terminal to the first load via the output terminal.

Abstract: A power supply unit for an aerosol generating device, includes a power supply, a heater connector connected to a heater configured to heat an aerosol source by consuming power supplied from the power supply, a case which constitutes a surface of the power supply unit, and a sensor which is disposed in the vicinity of the case and is configured to output a value related to a temperature of the case. Protection control for prohibiting one or both of charging of the power supply and discharging from the power supply to the heater is executed based on an output value of the sensor.

Abstract: A power supply unit of an aerosol generation device includes: a power supply; a heater connector to which a heater is connected; a controller configured to control supply of power from the power supply to the heater connector, a charging IC including an input terminal and a charging terminal connected to the power supply and configured to convert power input to the input terminal and output the power from the charging terminal; a receptacle including a power supply terminal and a data terminal and electrically connected to an external power supply; a power supply line connecting the power supply terminal and the input terminal; a data line connecting the data terminal and the controller; first protective components on the power supply line; and a second protective component on the data line. The number of the first protective components is larger than the number of the second protective component.

Abstract: A power supply unit of an aerosol generation device which a heating unit is attachable to and detachable from includes: a secondary battery; a case forming a surface of the power supply unit; a chassis accommodated in an internal space of the case and made of an insulating resin; a plurality of magnets held by the chassis with a gap therebetween; an inner member covering a side surface of the chassis; and an outer member covering an outer surface of the inner member. The inner member includes a plurality of through holes exposing the plurality of magnets, and the outer member is replaceably fixed by the plurality of magnets exposed from the plurality of through holes.

Abstract: A power supply unit of an aerosol generation device includes: a power supply; a heater connector to which a heater configured to heat an aerosol source by consuming power supplied from the power supply is connected; a first sensor disposed in the vicinity of the heater or the power supply and configured to output a value related to a temperature of the heater or a value related to a temperature of the power supply; and a second sensor provided at a position separated from the first sensor and configured to output a value related to a temperature at the position. At least one of the output value of the first sensor and the output value of the second sensor is abnormal, at least one or both of charging of the power supply and discharging from the power supply to the heater are temporarily prohibited.

Abstract: A power supply unit for an aerosol generating device includes a power supply, a heater connector connected to a heater configured to heat an aerosol source by consuming power supplied from the power supply, a connector electrically connectable to an external power supply, a charging IC which includes an input terminal connected to the connector and a charging terminal connected to the power supply, and is configured to convert power input to the input terminal and output power which is converted from the charging terminal, and a first load having one end connected in parallel with the input terminal. The charging IC is configured to supply power input from the power supply to the charging terminal to the first load via the input terminal.

Abstract: A circuit for an aerosol generation device includes: a heater connector to which is connected a heater that consumes power supplied from a power supply and heats an aerosol source; a controller that includes a first communication terminal and a second communication terminal for serial communication, and controls supply of power from the power supply to the heater; a first IC that is a separate entity from the controller and that includes a third communication terminal for serial communication; a second IC that is a separate entity from the controller and the first IC, and that includes a fourth communication terminal for serial communication; a first communication line that connects the first communication terminal and the third communication terminal; and a second communication line that connects the second communication terminal and the fourth communication terminal and that does not have an electrical contact with the first communication line.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes an oxide in a channel formation region; the semiconductor device includes a first transistor, a second transistor, a first wiring, a second wiring, and a third wiring, and the first transistor includes the oxide over a first insulator, a second insulator over the oxide, a first conductor over the second insulator, a third insulator over the first conductor, and a fourth insulator in contact with the second insulator, the first conductor, and the third insulator. The second transistor includes the oxide over a fifth insulator, a sixth insulator over the oxide, a second conductor over the sixth insulator, a seventh insulator over the second conductor, and an eighth insulator in contact with the sixth insulator, the second conductor, and the seventh insulator.

Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator over a substrate, an oxide over the first insulator, a second insulator over the oxide, a conductor overlapping with the oxide with the second insulator therebetween, a third insulator in contact with a top surface of the oxide, a fourth insulator in contact with a top surface of the third insulator, a side surface of the second insulator, and a side surface of the conductor, and a fifth insulator in contact with a side surface of the fourth insulator, a side surface of the third insulator, and the top surface of the oxide. The third insulator has a lower oxygen permeability than the fourth insulator.

Abstract: A highly integrated semiconductor device is provided. The semiconductor device includes an oxide semiconductor including a first region, a second region, a third region adjacent to the first region and the second region, and a fourth region adjacent to the second region; a first insulator over the oxide semiconductor; a first conductor over the first insulator; a second insulator over the oxide semiconductor, the first insulator, and the first conductor; a third insulator provided to overlap with a side surface of the first insulator and a side surface of the first conductor with the second insulator therebetween; a fourth insulator over the second insulator and the third insulator; and a second conductor in contact with the oxide semiconductor.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.