Abstract: A rod-like electrode is disposed in a vacuum container, a ring-like electrode is disposed around the rod-like electrode, a tube to be processed is disposed such that the tube is substantially continuous to the ring-like electrode, an interior of the vacuum container is set to a predetermined degree of vacuum for deposition, a gas is introduced into a space between the electrodes, an electric power for forming plasma from the gas is applied while applying a magnetic field, and the plasma produced thereby is supplied into the tube. If the deposition material gas is used, the film is formed on the inner peripheral surface of the tube. If the plasma source gas for sputtering is used, a sputtering voltage is applied to a sputtering target disposed inside the tube, so that the film is formed on the inner peripheral surface of the tube by sputtering the target with ions in the plasma.

Abstract: The present invention is directed to a method for forming a thin film on a substrate by the use of a glow discharge plasma which comprises generating a magnetic field in a direction which crosses an electric field for discharge at right angles and fluctuating the magnetic field.