Abstract: A CVD container having excellent temperature controllability which ensures that a CVD precursor can be stably vaporized and supplied to a CVD apparatus is described. The CVD precursor supply container is adapted to vaporize a CVD precursor and supply the vaporized CVD precursor, and includes a metal container having a side portion of a double-wall structure including an inner tube and an outer tube each made of a metal, and a vacuum heat insulating layer provided between the inner tube and the outer tube.

Abstract: A method for efficiently and safely cleaning an apparatus for tin compound and a highly purified tin compound apparatus are provided. A cleaning method for an apparatus that has been in contact with a tin compound having formula (1) below includes at least steps (A) to (C), in which step (B) is performed after step (A), and step (C) is performed after step (B): (A) a step of cleaning the apparatus with a non-protic solvent, (B) a step of cleaning the apparatus with alcohol, and (C) a step of cleaning the apparatus with ultrapure water having a resistivity value of 17 M?·cm at 25° C. RpSnXm??(1) In formula (1), R is a hydrocarbon group, p is an integer from 1 to 3, X is a hydrolyzable substituent, and m=4?p.

Abstract: A method for efficiently and safely cleaning an apparatus for a tin compound and a highly purified apparatus for a tin compound are provided. A method of cleaning an apparatus that has been in contact with a tin compound having formula (1) includes at least steps (A) to (C) in this order: (A) a step of cleaning the apparatus with a non-protonic solvent, (B) a step of cleaning the apparatus with an acidic aqueous solution and/or alkaline aqueous solution, and (C) a step of cleaning the apparatus with ultrapure water having a resistivity of 17 M?·cm at 25° C. RpSnXm??(1) R is a hydrocarbon group, p is an integer of 0 to 3, X is a hydrolyzable substituent, and m=4-p.

Abstract: Provided is an ?-Ga2O3 based semiconductor film having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cm?1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm?1 or less.

Abstract: Provided is a semiconductor film having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution, and an X-ray rocking curve full width at half maximum of a (104) plane on at least one surface of the semiconductor film is 500 arcsec or less.

Abstract: A learning apparatus 1 comprises: an acquisition unit 11 acquires a video MV; an extraction unit 12 extracts sets from frames in the video MV, each of the sets including a first frame and a second frame different from the first frame; a detection unit 13 detects objects in the first and second frames respectively; an association unit 14 associates the object in the first frame with the object in the second frame; and a learning unit 15 makes the association unit 14 learn an association method for the object based on association results by the association unit 14 with respect to the sets, wherein the sets include: a first set where a time interval between the first and second frames is a first interval; and a second set where a time interval between the first and second frames is a second interval different from the first interval.

Abstract: An object tracking apparatus (1) includes: a first generation unit (221-224) for generating, based on a first position information (PIt-?) related to a position of an object (Ot-?) in a first image (IMt-?) captured at a first time (t-?) and a second position information (PIt) related to a position of an object (Ot) in a second image (IMt) captured at a second time (t), first and second feature vectors (CVt-?, CVt); and a second generation unit (225) for generating, as a correspondence information (AM) indicating a correspondence relationship between the object in the first image and the object in the second image, an information that is obtained by a calculation processing using the first and the second feature vectors.

Abstract: An organopolysiloxane is provided. The organopolysiloxane is represented by a general formula. In the general formula, R1 are the same or different aliphatic unsaturated monovalent hydrocarbon groups having 2 to 12 carbon atoms, R2s are the same or different monovalent hydrocarbon groups having 1 to 12 carbon atoms and not having an aliphatic unsaturated bond, R3s are the same or different alkyl groups having 1 to 3 carbon atoms, “n” is an integer of from 1 and 500, and “a” is 0 or 1. A thermally conductive silicone composition having the organopolysiloxane as a component is also provided. The organopolysiloxane can be used as a surface treatment agent for a thermally conductive filler. The organopolysiloxane provides for favorable handling/workability of compositions even if such compositions are highly loaded with a thermally conductive filler.

Abstract: An information processing apparatus includes: a generation unit that generates a patch token and a prefix token corresponding to an input image; an extension unit that extends the prefix token to a prefix token block having a size corresponding to a number of a plurality of patch token blocks into which the patch token is segmented in accordance with a predetermined grid pattern; and an arithmetic unit that performs an arithmetic operation on the prefix token block and the patch token blocks, on the basis of a self-attention mechanism, for each group of elements located at a common position in the respective blocks. According to the information processing apparatus, it is possible to properly perform processing based on the self-attention mechanism on the input image.

Abstract: A metal container for an organotin compound in which the metal container has a diamond-like carbon layer on an inner surface. The diamond-like carbon layer is a fluorine-containing diamond-like carbon layer or at least two diamond-like carbon layers having hydrogen atom contents different from each other, and the diamond-like carbon layer has a thickness of 50 to 15,000 nm.

Abstract: Provided is a ?-Ga2O3 based semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. The maximum value ?max and the minimum value ?min for off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of ?max-?min?0.30°. The off-angle is defined as an inclination angle ? of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.

Abstract: Provided is a curable organopolysiloxane composition for forming a film capable of uniform and thin film formation, and a method of manufacturing an organopolysiloxane cured film using the same. The curable organopolysiloxane composition for forming a film, comprises: a curing reactive organopolysiloxane, a curing agent, and one or more type of organic solvent selected from (D1) organic polar solvents, (D2) low molecular weight siloxane solvents, and (D3) halogen solvents, or a mixed solvent thereof. The viscosity of the entire composition measured at a shear rate of 0.1 (s?1) at 25° C. is 100,000 mPa·s or less, the viscosity of the entire composition measured at a shear rate of 10.0 (s?1) is within a range of 5 to 10,000 mPa·s, and a thixotropic ratio thereof is 25.0 or less.

Abstract: A curable organopolysiloxane composition is provided. The composition has relatively low viscosity before curing, can be easily processed into a film shape, and has excellent mechanical strength (e.g., tensile strength, tear strength, elongation, and the like) when, e.g., used as a dielectric layer in a transducer. Other applications are also provided. The composition comprises: (A1, A2) a combination of chain organopolysiloxanes having an alkenyl group only on an end of a molecular chain, and a degree of polymerization within a range of 50 to 550 and a range of 600 to 1000; (B) hydrophobically treated reinforcing silica; (C) a siloxane resin containing an alkenyl group; (D) an organohydrogenpolysiloxane; and (E) a catalyst. The mass ratio of components (A1)/(A2) is within a range of 0.45 to 1.30, and the sum of component (B) and component (C) is within a range of 10 to 25 mass % of the entire composition.

Abstract: A bonding structure used for forming a sealed space (for example, a container) for containing or transferring an organotin compound, wherein the bonding structure is a structure in which a first member is connected with a second member via a gasket or an O-ring, and the gasket or the O-ring is formed with a fluororesin derived from monomers of at least tetrafluoroethylene and perfluoromethyl vinyl ether.

Abstract: An information processing apparatus according to one example embodiment includes: at least one memory configured to store instructions; and at least one processor configured to execute the instructions to: extract, from a feature map, a first feature map pertaining to a first feature, a second feature map pertaining to a second feature, and a third feature map pertaining to a third feature; determine a correspondence relationship indicating a plurality of second components associated to each first component by shifting a grid pattern indicating a plurality of the second components associated to one first component on the second feature map, based on a position of each first component, and reflect a correlation between the first feature and the second feature being calculated from the correspondence relationship, in the third feature map.

Abstract: An object of this disclosure is to provide a laminate body where an organopolysiloxane cured material film which is a dielectric layer is laminated onto an electrode layer or base material layer, in which the adhesion of the interface of the cured material film is improved and the problems of peeling and defects caused by lack of adhesive strength and insufficient tracking do not readily occur, as well as a use thereof and a manufacturing method. A curable organopolysiloxane composition for a transducer, containing at least: (A) a polysiloxane having a C?C type curable reactive group; (B1) a side chain SiH type organohydrogenpolysiloxane; (B2) a terminated SiH type organohydrogenpolysiloxane; (C) a hydrosilylation reaction catalyst; (D) a reinforcing filler; and (E) an adhesion imparting agent. A value of: px1={HB1/HB2}/{(HB1+HB2)/Vi} is within a range of 0.1 to 6.0.

Abstract: A bonding structure used for forming a sealed space (for example, a container) for containing or transferring an organotin compound, wherein the bonding structure is a structure in which a first metal member (for example, a lid of the container) is connected to a second metal member (for example, a container body of the container) via a metal gasket or a metal O-ring, and the metal gasket or the metal O-ring has a surface having a Vickers hardness set to be not less than lower than a Vickers hardness of a surface of a portion of the metal member, the portion being contacted with the metal gasket or the metal O-ring.

Abstract: A method for purifying a tin compound, including: making an inert gas pass through in, or on a surface of, a liquid containing a tin compound represented by a chemical formula RSnX3, where R represents a hydrocarbon group having 1 to 30 carbon atoms optionally substituted with a halogen atom, and X represents a hydrolysable substituent, to perform stripping, before or after a distillation step of the tin compound.

Abstract: Provided is a curable organopolysiloxane composition for forming a film, which has low viscosity before curing, has excellent mechanical strength and dielectric breakdown strength after curing, and can provide a uniform and thin organopolysiloxane cured film. The curable organopolysiloxane composition comprises: a curing reactive organopolysiloxane, a curing agent, (D1) reinforcing fine particles having a BET specific surface area exceeding 100 m2/g, which have been surface treated with an organic silicon compound, and (D2) reinforcing fine particles having a BET specific surface area within a range of 10 to 100 m2/g, which have been surface treated with an organic silicon compound. The mass ratio of components (D1) and (D2) is within a range of 50:50 to 99:1, and the sum of components (D1) and (D2) is within a range of 10 to 40 mass %. A method of manufacturing an organopolysiloxane cured film using the curable organopolysiloxane composition is also provided.

Abstract: A silicone elastomer cured product having radical reactivity obtained by curing a composition is disclosed. The composition comprises (A) a chain organopolysiloxane having a curing reactive group, and optionally (B) an organohydrogen polysiloxane, (C1) a curing agent, and (D) an organopolysiloxane resin. The surface of the cured product has radical reactivity with, for example, an adhesive, and is easily removable along with, for example, adhesive tape after use as a protective material. In general, the cured product has excellent heat resistance and flexibility and exhibits good adhesion and conformity to a substrate so as not to separate from a substrate even when the cured product is cut together with the substrate while remaining easily removable from the substrate when desired. A protective material for an electronic component made of the cured product is also disclosed.