Abstract: Provided is a semiconductor film having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution and the crystal defect density on at least one surface of the semiconductor film is 1.0×106/cm2 or less.

Abstract: A quartz glass crucible 1 having a cylindrical side wall portion 10a, a bottom portion 10b, and a corner portion 10c includes a transparent layer 11 as an innermost layer made of quartz glass, a semi-molten layer 13 as an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layer 12 made of quartz glass interposed therebetween. An infrared transmissivity of the corner portion 10c in a state where the semi-molten layer 13 is removed is 25 to 51%, the infrared transmissivity of the corner portion 10c in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the side wall portion 10a, and the infrared transmissivity of the side wall portion 10a in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the bottom portion 10b.

Abstract: An excellent method of manufacturing a patterned substrate which is capable of easily patterning an insulation layer to provide a patterned substrate even when a difficult-to-etch material is used for the insulation layer, a patterned substrate obtained thereby, and a patterned substrate intermediate thereof are provided. The method of manufacturing a patterned substrate with the insulation layer and an electrode layer stacked in this order on a substrate comprising: forming an organic resist material layer; irradiating the organic resist material layer with radiation or an electromagnetic wave of a wavelength of 10 to 780 nm and developing the organic resist material layer to form a first patterning layer; and removing the first patterning layer.

Abstract: This disclosure provides an electronic device member that is superior in ease of handling, without any loss of flatness or performance (e.g. flexibility and dielectric properties) despite being a dielectric sheet having a dielectric polymer cured material that is physically fragile. Disclosed herein is a layered body including (L1) a single layer or multiple layers of a high dielectric sheet that includes a polymer cured material having a dielectric functional group, and at least one (L2) pressure-sensitive adhesive layer, and in general further having (L3) an electrode layer and/or (L4) a non-silicone thermoplastic resin layer, and uses thereof.

Abstract: A curable fluorosilicone composition is provided. The curable fluorosilicone composition comprises: (A) an organopolysiloxane having at least two alkenyl groups and at least one fluoroalkyl group having 3 to 12 carbon atoms in a molecule; (B) an organopolysiloxane having at least two silicon atom-bonded hydrogen atoms and at least one fluoroalkyl group having 3 to 12 carbon atoms in a molecule; (C) a platinum group metal-based catalyst for hydrosilylation reaction; and (D) a silylated acetylene inhibitor. The platinum group metals in component (C) relative to the composition are 0.1 to 100 ppm, and the molar ratio of the aliphatic unsaturated bonds in component (D) relative to the platinum group metals in component (C) is 100 to 2,000. The curable fluorosilicone composition has favorable curability and a sufficiently long pot life at room temperature.

Abstract: A curable fluorosilicone composition is provided. The curable fluorosilicone composition comprises: (A) an organopolysiloxane having at least two alkenyl groups and at least one fluoroalkyl group in a molecule; (B) an organopolysiloxane having at least two silicon atom-bonded hydrogen atoms and at least one fluoroalkyl group in a molecule; (C) a platinum group metal-based catalyst for hydrosilylation reaction; and (D) a hydrosilylation reaction inhibitor having an aliphatic unsaturated bond. Component (C) is an encapsulation type catalyst having an acrylic resin as a wall material. The platinum group metals in component (C) relative to the composition are 0.1 to 100 ppm. The molar ratio of the aliphatic unsaturated bonds in component (D) relative to the platinum group metals in component (C) is 1 to 100. The curable fluorosilicone composition has favorable curability and a sufficiently pot life at room temperature.

Abstract: An information processing apparatus includes: an extraction unit that extracts a feature quantity from image data; an acquisition unit that obtains a partial feature quantity by cutting out a particular position from the feature quantity; an arithmetic unit that performs a predetermined arithmetic process by using the partial feature quantity; and a restoration unit that restores a result of the predetermined arithmetic process to a size of the feature quantity.

Abstract: A laminate body is provided, in which two or more organopolysiloxane cured films are obtained by curing curable organopolysiloxane compositions having different compositions because, e.g., the functions required for a dielectric layer and electrode layer are different. In general, problems such as peeling and defects due to insufficient adhesive strength and trackability do not easily occur at an interface between the cured films forming the laminate body. Applications and methods are also provided. The laminate body comprises a structure with two or more laminated organopolysiloxane cured films with different compositions. At least a portion of functional groups involved in the curing reaction are the same. The laminated cured films have structures chemically bonded at an interface thereof.

Abstract: An organopolysiloxane cured film which can be made thin, has an extremely low number of defects on a surface and inside of the film, and exhibits high dielectric breakdown strength with regard to a load voltage is provided. Also provided are applications thereof and a method of manufacturing. The organopolysiloxane cured film has an average thickness within a range of 1 to 200 ?m. In general, the number of surface defects is 0 to 1, and the number of internal defects is 0 to 20, when measuring the number of surface defects using optical means in an arbitrary position on the organopolysiloxane cured film with a unit area of 15 mm×15 mm. The organopolysiloxane cured film may be obtained by a rolling step in a clean room or the like, or may be obtained by curing between separators provided with a release layer.

Abstract: A multilayer structure of the present invention is a multilayer structure including a base substrate and a semiconductor film that is made of ?-Ga2O3 or an ?-Ga2O3-based solid solution and has a corundum crystal structure, the semiconductor film being disposed on the base substrate. The semiconductor film has an average film thickness of greater than or equal to 10 ?m. The semiconductor film is convexly or concavely warped. An amount of warpage of the semiconductor film is 20 ?m or greater and 64 ?m or less.

Abstract: A data processing apparatus (2) includes: a calculation unit (24) for calculating a map information (AP) that represents a distribution of a vector component having a relatively high importance of a plurality of feature vector components that are included in a fourth feature vector (z4) obtained by synthesizing a first feature vector (z1) and a second feature vector (z2); and a generation unit (23) for generating a third feature vector (z3) by using the fourth feature vector (z4) and the map information.

Abstract: An attention mechanism according to one aspect of the present disclosure includes: an intermediate acquisition unit that acquires a feature map indicating a feature of an image; an embedding unit that performs block-based feature embedding computation on the acquired feature map and generates an embedded feature map which is converted so that its scale is reduced; and a weighting unit that predicts an attention weight of the feature associated to a position of the image from information based on the embedded feature map by using an attention mechanism algorithm and generates a weighted feature map associated to the feature map by using the attention weight.

Abstract: An object tracking apparatus (1) includes: a first generation unit (221-224) for generating, based on a first position information (PIt-?) related to a position of an object (Ot-?) in a first image (IMt-?) captured at a first time (t-?) and a second position information (PIt) related to a position of an object (Ot) in a second image (IMt) captured at a second time (t), first and second feature vectors (CVt-?, CVt); and a second generation unit (225) for generating, as a correspondence information (AM) indicating a correspondence relationship between the object in the first image and the object in the second image, an information that is obtained by a calculation processing using the first and the second feature vectors.

Abstract: Performance requirements of electroactive polymer materials used for transducer devices include dielectric breakdown strength, Young's modulus, dielectric constant, thickness, and electromechanical instability. There are correlation relationships therebetween but definitions of the correlation relationships have not been achieved. Therefore, it is necessary to search for an excellent material by trial and error, which requires a great deal of work. Disclosed herein is a curable elastomer composition that includes a compound having a high dielectric functional group. A cured product of the composition satisfies the following formula: E = ? ? ( Y ? 0 ? ? r ) 0.5 where E is the dielectric breakdown strength in the range of 50 V/?m to 200 V/?m, ? is a constant in the range of 0.4 to 0.9, Y is Young's modulus and is in the range of 0.001 MPa to 10 MPa, ?? is a specific dielectric constant and is 100 or less, and ?0 represents the dielectric constant of vacuum.

Abstract: An organopolysiloxane is provided. The organopolysiloxane is represented by a general formula. In the general formula, R1 are the same or different aliphatic unsaturated monovalent hydrocarbon groups having 2 to 12 carbon atoms, R2s are the same or different monovalent hydrocarbon groups having 1 to 12 carbon atoms and not having an aliphatic unsaturated bond, R3s are the same or different alkyl groups having 1 to 3 carbon atoms, “n” is an integer of from 1 and 500, and “a” is 0 or 1. A thermally conductive silicone composition having the organopolysiloxane as a component is also provided. The organopolysiloxane can be used as a surface treatment agent for a thermally conductive filler. The organopolysiloxane provides for favorable handling/workability of compositions even if such compositions are highly loaded with a thermally conductive filler.

Abstract: A curable organopolysiloxane composition is provided. The composition can be easily processed into a film shape and has a high specific dielectric constant, high dielectric breakdown strength, and a low Young's modulus, allowing for a high energy density to be achieved, in addition to having excellent mechanical strength when used as a dielectric layer in a transducer. A fluoroalkyl group-containing curable organopolysiloxane composition, which can be cured by an addition reaction, comprises: an organopolysiloxane containing an alkenyl group and a fluoroalkyl group; an organohydrogen polysiloxane having SiH at both terminals of a molecular chain but not having a fluoroalkyl group; and a linear fluoroalkyl group-containing organohydrogen polysiloxane or a branched fluoroalkyl group-containing organohydrogen polysiloxane having T units.

Abstract: Provided is an ?-Ga2O3 based semiconductor film having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cm?1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm?1 or less.

Abstract: An ?-Ga2O3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

Abstract: Provided is a laminate having, on a substrate, a gel layer which is excellent in heat resistance, has low elastic modulus, low stress and is excellent in stress buffering properties and flexibility, is soft and excellent in holding property of electronic components before curing, and after curing, the gel layer is changed to a hard cured layer which is higher in shape retention and excellent in mold releasability than before curing, and a method for manufacturing the same. Also provided is a method for manufacturing an electronic component in which use of the laminate makes it difficult to cause problems such as deposits of silicone gel or a cured product thereof to a substrate or an electronic component, and makes it difficult to cause problems of defects or defective products of the electronic component. The laminate includes a curing reactive silicone gel layer on at least one type of substrate.

Abstract: Provided is a ?-Ga2O3 based semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. The maximum value ?max and the minimum value ?min for off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of ?max-?min?0.30°. The off-angle is defined as an inclination angle ? of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.