Abstract: A method for washing an aluminum nitride single crystal substrate, the aluminum nitride single crystal substrate including: an aluminum-polar face; and a nitrogen-polar face opposite to the aluminum-polar face, the method including: (a) scrubbing a surface of the nitrogen-polar face.

Abstract: A wire harness manufacturing method includes manufacturing a standard-size electric wire in which a terminal-equipped electric wire which is connected to a terminal is manufactured in lot units for each type, clamping the terminal-equipped electric wire to a pair of electric wire clips, dispensing a plurality of terminal-equipped electric wires respectively clamped by the electric wire clamps to electric wire holders, storing the plurality of the terminal-equipped electric wires temporarily in the electric wire holders, locking the both end portions of the terminal-equipped electric wire to an electric wire clip tool respectively and aggregating an electric wire group configuring a wire harness at the electric wire clip tool to form a harness set, and detaching the end portions of the terminal-equipped electric wire from the harness set and inserting the terminal connected and fixed into a terminal accommodating chamber of a connector housing.

Abstract: A method for producing a group III nitride laminate by growing a layer containing a group III nitride single crystal represented by AlXInYGaZN, where X, Y, and Z in the composition formula satisfy relation of X+Y+Z=1.0, 0.8?X<1.0, 0.0?Y<0.2, and 0.0<Z?0.2, on main surface of a base substrate having at least one main surface including an aluminum nitride single crystal layer, in which a V/III ratio representing a molar ratio of a nitrogen source gas to a group III raw material gas which are used for growing the layer containing the group III nitride single crystal is 5000 or more and 15000 or less.

Abstract: A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlXGa1-XN layer (0<X?1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5×1010 cm?2 or a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlXGa1-XN layer (0<X?1).

Abstract: A wire harness manufacturing method includes manufacturing a standard-size electric wire in which a terminal-equipped electric wire which is connected to a terminal is manufactured in lot units for each type, clamping the terminal-equipped electric wire to a pair of electric wire clips, dispensing a plurality of terminal-equipped electric wires respectively clamped by the electric wire clamps to electric wire holders, storing the plurality of the terminal-equipped electric wires temporarily in the electric wire holders, locking the both end portions of the terminal-equipped electric wire to an electric wire clip tool respectively and aggregating an electric wire group configuring a wire harness at the electric wire clip tool to form a harness set, and detaching the end portions of the terminal-equipped electric wire from the harness set and inserting the terminal connected and fixed into a terminal accommodating chamber of a connector housing.

Abstract: A terminal insertion device that inserts a terminal into a connector housing, is provided with a stationary disk, a parallel joint mechanism which grasps an electric wire which is connected to the terminal at a leading end and conveys the electric wire and inserts the terminal into a cavity of the connector housing, a biaxial sensor portion capable of measuring at least a contour position of the terminal, roll angle calculation portion which calculates a roll angle with respect to a reference condition, and a roll angle compensation control portion that controls the parallel joint mechanism to compensate an inclination of the terminal.

Abstract: Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film. The method includes heating the base substrate at a temperature range of 1000 to 1250° C. for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of AlAGaBInCN; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.

Abstract: A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlxGa1?xN layer (0<X?1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5×1010 cm?2 or a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlxGa1?xN layer (0<X?1).

Abstract: The first-arm-curved-part includes a first open-circumferential-edge contact surface that is capable of touching a part that has a length of 3 mm to 6 mm in the circumferential direction of the open circumferential edge. The second-arm-curved-part includes a second open-circumferential-edge contact surface that is capable of touching a part that has a length of 3 mm to 6 mm in the circumferential direction of the open circumferential edge. The distance between the first gripping part and the second gripping part is 35 mm to 45 mm, when the first open-circumferential-edge contact surface and the second open-circumferential-edge contact surface touch the open circumferential edge to hold the pilfer-proof cap with the first arm and the second arm.

Abstract: Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film. The method includes heating the base substrate at a temperature range of 1000 to 1250° C. for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of AlAGaBInCN; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.

Abstract: A terminal insertion device that inserts a terminal into a connector housing, is provided with a stationary disk, a parallel joint mechanism which grasps an electric wire which is connected to the terminal at a leading end and conveys the electric wire and inserts the terminal into a cavity of the connector housing, a biaxial sensor portion capable of measuring at least a contour position of the terminal, roll angle calculation portion which calculates a roll angle with respect to a reference condition, and a roll angle compensation control portion that controls the parallel joint mechanism to compensate an inclination of the terminal.

Abstract: A GaN crystal multi-layer substrate having surfaces with various crystal orientations formed on a sapphire base substrate, such as a substrate whose principal surface is a <11-20> plane which is the a-plane, a <1-100> plane which is the m-plane, or a <11-22> plane having a low threading dislocation density and high crystal quality of a GaN crystal, and a production process therefor.

Abstract: Disclosed is a method for producing a porous carbon material comprising: heating a cured phenolic resin complex lump, including 150 to 450 parts by weight of sodium hydroxide and/or potassium hydroxide per 100 parts by weight of phenolic resin, at a temperature of 420 to 850° C. in a non-oxidizing atmosphere to obtain carbonized material; and washing and removing sodium hydroxide and potassium hydroxide included in the carbonized material. According to the present invention, there can be provided a porous carbon material, including large volumes of subnano-pores having a diameter of in a range of 0.45 to 1.0 nm with a sharp distribution, which is particularly useful as a gaseous adsorbent.

Abstract: A non-contact power transfer apparatus includes a power transmission unit including a power transmission coil, a power transmission circuit, a current detection circuit, and a unit detection means and a first microcomputer with a control circuit for controlling each of the circuits. The non-contact power transfer apparatus also includes a power reception unit having a power reception coil, a rectification smoothing circuit, a series regulator, a charge battery unit with a rechargeable battery, a switching element for pulse-charging and a second microcomputer with a control circuit for controlling the series regulator and the switching element. As such, the power reception unit receives power via the power reception coil, while the rectification smoothing circuit and series regulator generate a set voltage. The set voltage is used to start the second microcomputer to apply an initial reset and a pulse pattern as an ID authentication pattern to the switching element.

Abstract: The present invention is to provide a terminal insertion apparatus and method to insert a terminal into a terminal-receiving chamber without hitting an inner surface of the terminal-receiving chamber. A terminal insertion apparatus includes a housing holder unit, an insertion unit, and a control device. The housing holder unit holds a connector housing and is movable in a horizontal direction and a vertical direction. The insertion unit inserts a terminal attached with an electrical wire into a terminal-receiving chamber of the connector housing. The control device controls a move unit support portion to reciprocate a housing holder by a move distance after an end portion of the terminal is inserted into the terminal-receiving chamber so that the terminal can be inserted without hitting an inner surface of the terminal-receiving chamber.

Abstract: A terminal insertion apparatus having a connector housing holding unit, a terminal insertion unit, and a control unit. The connector housing holding unit holds a connector housing movably in horizontal and vertical directions. The terminal insertion unit inserts a terminal attached to an electric wire into a terminal accommodating chamber of the connector housing. After the terminal insertion unit has inserted an end of the terminal into the terminal accommodating chamber, the control unit controls a movable supporting unit of the connector housing holding unit so as to move a holding jig by amounts of movement in horizontal and vertical directions so that the terminal is not caught on an inner surface of the terminal accommodating chamber, and then the terminal is completely inserted in the terminal accommodating chamber.

Abstract: A data converting apparatus and a data converting program are suitable to quantitatively estimate, based on a temporal alteration of a stimulus value, a temporal alteration of a sensitivity brought to human beings. The data converting apparatus includes a decomposing unit subjecting temporal alteration data of a stimulus value to wavelet decomposition to extract plural time-frequency components contained in the temporal alteration data, a weighting unit weighting the plural extracted time-frequency components weighting coefficients which are predetermined based on a relationship between a temporal alteration of a stimulus value and a temporal alteration of a sensitivity of human beings to the stimulus value, and a synthesizing unit subjecting the plural weighted time-frequency components to wavelet synthesis to estimate a sensitivity brought to human beings when the stimulus value is subjected to temporal alteration according to the temporal alteration data.

Abstract: The present invention is to provide a terminal insertion apparatus and method to insert a terminal into a terminal receiving chamber without hitting an inner surface of the terminal receiving chamber. A terminal insertion apparatus includes a housing holder unit, an insertion unit, and a control device. The housing holder unit holds a connector housing and is movable in a horizontal direction and a vertical direction. The insertion unit inserts a terminal attached with an electrical wire into a terminal receiving chamber of the connector housing. The control device controls a move unit support portion to reciprocate a housing holder by a move distance after an end portion of the terminal is inserted into the terminal receiving chamber so that the terminal can be inserted without hitting an inner surface of the terminal receiving chamber.

Abstract: The present invention is to provide a terminal insertion apparatus to insert a terminal into a terminal receiving chamber without hitting an inner surface of the terminal receiving chamber. A terminal insertion apparatus includes a housing holder unit, an insertion unit, and a control device. The housing holder unit holds a connector housing and is movable in a horizontal direction and a vertical direction. The insertion unit inserts a terminal attached with an electrical wire into a terminal receiving chamber of the connector housing. The control device controls a move unit support portion to reciprocate a housing holder by a move distance after an end portion of the terminal is inserted into the terminal receiving chamber so that the terminal can be inserted without hitting an inner surface of the terminal receiving chamber.

Abstract: Disclosed is a method for producing a porous carbon material comprising: heating a cured phenolic resin complex lump, including 150 to 450 parts by weight of sodium hydroxide and/or potassium hydroxide per 100 parts by weight of phenolic resin, at a temperature of 420 to 850° C. in a non-oxidizing atmosphere to obtain carbonized material; and washing and removing sodium hydroxide and potassium hydroxide included in the carbonized material. According to the present invention, there can be provided a porous carbon material, including large volumes of subnano-pores having a diameter of in a range of 0.45 to 1.0 nm with a sharp distribution, which is particularly useful as a gaseous adsorbent.