Abstract: A straddle type vehicle includes a front cowl configured to cover a front part of the vehicle, a shield arranged above the front cowl, and a detecting unit configured to detect a situation in front of the vehicle. The detecting unit includes at least an image capturing unit that is positioned above a lower end of the front cowl and in a central portion of the straddle type vehicle in a vehicle width direction, and is arranged in a position where the shield does not interfere with an image capturing range. The image capturing unit is arranged behind an upper portion of the front cowl.

Abstract: An object recognition apparatus mounted in a vehicle including a sensor is provided. The apparatus includes a detection unit configured to detect an object present in a same lane as that of the vehicle by using information from the sensor, an acquisition unit configured to acquire information concerning lights which the object turns on by using the information from the sensor, and a determining unit configured to determine a type of the object based on the information concerning the lights. A condition in which the determination unit determines that the type of the object is a two-wheeled vehicle includes a case in which the object includes not less than two lights arrayed in a vertical direction with respect to the ground surface.

Abstract: A straddle type vehicle comprising: a first display unit configured to display speed information of the straddle type vehicle; and a second display unit configured to display information concerning automatic traveling control of the straddle type vehicle, wherein the first display unit and the second display unit are arranged on a front side of the vehicle with respect to a head pipe of the straddle type vehicle, in the first display unit, a display position of the vehicle speed information changes linearly or in a curve in accordance with a change in a speed of the straddle type vehicle, and the second display unit is arranged to be adjacent in an upward direction or a left-and-right direction of the display position of the speed information on a high speed range side of the first display unit.

Abstract: Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re—W, W—Ta, Zr—Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.

Abstract: [Problems]Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. [Means for solution]The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re-W, W-Ta, Zr-Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.

Abstract: A polycrystalline silicon material for solar power generation is polycrystalline silicon obtained by supplying a raw material silane gas to a red-hot silicon seed rod in a sealed reactor at high temperature to thereby thermally decompose or hydrogen-reduce the raw material silane gas. The polycrystalline silicon has a p-type or n-type conductivity, a resistivity of 3 to 500 ?cm, and a lifetime of 2 to 500 ?sec and is used for manufacturing a silicon wafer for solar power generation.