Patents by Inventor Hiroshi HANEKAWA

Hiroshi HANEKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240241433
    Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
    Type: Application
    Filed: March 29, 2024
    Publication date: July 18, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Takuma KATO, Keishi TSUKIYAMA, Toshiyuki UNO, Hiroshi HANEKAWA, Ryusuke OISHI, Sadatatsu IKEDA, Yukihiro IWATA, Chikako HANZAWA
  • Patent number: 12038685
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Grant
    Filed: May 24, 2023
    Date of Patent: July 16, 2024
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Hiroyoshi Tanabe, Toshiyuki Uno, Hiroshi Hanekawa, Daijiro Akagi
  • Patent number: 12032280
    Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.
    Type: Grant
    Filed: December 19, 2023
    Date of Patent: July 9, 2024
    Assignee: AGC INC.
    Inventors: Hiroshi Hanekawa, Taiga Fudetani, Yusuke Ono, Shunya Taki
  • Publication number: 20240201576
    Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
    Type: Application
    Filed: February 29, 2024
    Publication date: June 20, 2024
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroshi HANEKAWA, Toshiyuki UNO, Masafumi AKITA
  • Publication number: 20240184191
    Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index n?1000-1100 nm of 5.300 or less and has an extinction coefficient k?1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index n?600-700 nm of 4.300 or less and has an extinction coefficient k?600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index n?400-500 nm of 2.500 or more and has an extinction coefficient k?400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
    Type: Application
    Filed: February 12, 2024
    Publication date: June 6, 2024
    Applicant: AGC INC.
    Inventors: Yusuke ONO, Hiroshi HANEKAWA, Hirotomo KAWAHARA
  • Publication number: 20240176225
    Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dbi of the absorbent layer satisfies a relationship of: dbi MAX?(i×6+1) nm?dbi?dbi MAX?(i×6?1) nm where the integer i is 0 or 1, and dbi MAX is represented by: d bi ? MAX ( nm ) = 13.53 2 ? n ? cos ? 6 ? ° { INT ( 0.58 1 - n 1 ) + 1 2 ? ? ? ( tan - 1 ( - k 2 1 - n 2 ) + 0.
    Type: Application
    Filed: January 19, 2024
    Publication date: May 30, 2024
    Applicant: AGC INC.
    Inventors: Hiroyoshi TANABE, Hiroshi HANEKAWA, Toshiyuki UNO
  • Publication number: 20240160097
    Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.
    Type: Application
    Filed: December 19, 2023
    Publication date: May 16, 2024
    Applicant: AGC INC.
    Inventors: Hiroshi HANEKAWA, Taiga FUDETANI, Yusuke ONO, Shunya TAKI
  • Patent number: 11982935
    Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
    Type: Grant
    Filed: November 17, 2021
    Date of Patent: May 14, 2024
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Hiroshi Hanekawa, Toshiyuki Uno, Masafumi Akita
  • Patent number: 11934093
    Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index n?1000-1100 nm of 5.300 or less and has an extinction coefficient k?1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index n?600-700 nm of 4.300 or less and has an extinction coefficient k?600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index n?400-500 nm of 2.500 or more and has an extinction coefficient k?400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
    Type: Grant
    Filed: July 7, 2023
    Date of Patent: March 19, 2024
    Assignee: AGC INC.
    Inventors: Yusuke Ono, Hiroshi Hanekawa, Hirotomo Kawahara
  • Patent number: 11914283
    Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: d M ? A ? X - ( i × 6 + 1 ) ? nm ? d ? d M ? A ? X - ( i × 6 - 1 ) ? nm where the integer i is 0 or 1, and dMAX is represented by: d MAX ( nm ) = 13.53 2 ? n ? cos ? 6 ? ° { INT ? ( 0.58 1 - n ) + 1 2 ? ? ? ( tan - 1 ( - k 1 - n ) + 0.64 ) } where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
    Type: Grant
    Filed: April 11, 2022
    Date of Patent: February 27, 2024
    Assignee: AGC INC.
    Inventors: Hiroyoshi Tanabe, Hiroshi Hanekawa, Toshiyuki Uno
  • Publication number: 20230350284
    Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index n?1000-1100 nm of 5.300 or less and has an extinction coefficient k?1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index n?600-700 nm of 4.300 or less and has an extinction coefficient k?600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index n?400-500 nm of 2.500 or more and has an extinction coefficient k?400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
    Type: Application
    Filed: July 7, 2023
    Publication date: November 2, 2023
    Applicant: AGC INC.
    Inventors: Yusuke Ono, Hiroshi Hanekawa, Hirotomo Kawahara
  • Publication number: 20230305383
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Application
    Filed: May 24, 2023
    Publication date: September 28, 2023
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO, Hiroshi HANEKAWA, Daijiro AKAGI
  • Patent number: 11703751
    Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2?) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.
    Type: Grant
    Filed: September 1, 2021
    Date of Patent: July 18, 2023
    Assignee: AGC INC.
    Inventors: Hiroshi Hanekawa, Tsuyoshi Kakuta, Yoichi Sera, Sadatatsu Ikeda
  • Patent number: 11698580
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: July 11, 2023
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Hiroyoshi Tanabe, Toshiyuki Uno, Hiroshi Hanekawa, Daijiro Akagi
  • Publication number: 20220236636
    Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: d M ? A ? X - ( i × 6 + 1 ) ? nm ? d ? d M ? A ? X - ( i × 6 - 1 ) ? nm where the integer i is 0 or 1, and dMAX is represented by: d M ? A ? X ( nm ) = 1 ? 3 . 5 ? 3 2 ? n ? cos ? 6 ? ° ? { INT ? ( 0 . 5 ? 8 1 - n ) + 1 2 ? ? ? ( tan - 1 ( - k 1 - n ) + 0 . 6 ? 4 ) } where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
    Type: Application
    Filed: April 11, 2022
    Publication date: July 28, 2022
    Applicant: AGC INC.
    Inventors: Hiroyoshi TANABE, Hiroshi HANEKAWA, Toshiyuki UNO
  • Publication number: 20220075256
    Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
    Type: Application
    Filed: November 17, 2021
    Publication date: March 10, 2022
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroshi HANEKAWA, Toshiyuki UNO, Masafumi AKITA
  • Publication number: 20210397077
    Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2?) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.
    Type: Application
    Filed: September 1, 2021
    Publication date: December 23, 2021
    Applicant: AGC INC.
    Inventors: Hiroshi HANEKAWA, Tsuyoshi KAKUTA, Yoichi SERA, Sadatatsu IKEDA
  • Publication number: 20210325772
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Application
    Filed: April 20, 2021
    Publication date: October 21, 2021
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO, Hiroshi HANEKAWA, Daijiro AKAGI
  • Patent number: 11150550
    Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2?) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: October 19, 2021
    Assignee: AGC INC.
    Inventors: Hiroshi Hanekawa, Tsuyoshi Kakuta, Yoichi Sera, Sadatatsu Ikeda
  • Patent number: 11036127
    Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: June 15, 2021
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Hiroshi Hanekawa, Toshiyuki Uno