Patents by Inventor Hiroshi Hatada

Hiroshi Hatada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6429454
    Abstract: A semiconductor device has pads that are arranged in such a manner as to easily accept manual needles to carry out a test. This technique is applicable to carry out a test with use of a boundary scan test circuit in synchronization with a cycle time defined by a normal operation clock signal. The semiconductor device has a first pad connected to a first one of registers that form a serial scan chain, to supply test data to the registers, a second pad connected to a last one of the registers, and a third pad to supply a test clock signal to the registers. The registers are arranged in a central part of the semiconductor device, and the first to third pads are arranged at the periphery of the semiconductor device.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: August 6, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Hatada, Nobuaki Otsuka, Osamu Hirabayashi, Yasushi Kameda
  • Patent number: 6408414
    Abstract: A semiconductor device provided with a compact Boundary-Scan test circuit is shown. The Boundary-Scan test circuit comprises a Boundary-Scan test register which is composed of bit elements serially connected to each other in the form of a scan path and each of which is connected respectively to one of pads of the semiconductor device, wherein part of the bit elements of said Boundary-Scan test register functions also as an ID-Code register while an initial bit element of said Boundary-Scan test register functions also as a bypass register for bypassing the subsequent bit elements of said Boundary-Scan test register.
    Type: Grant
    Filed: June 17, 1999
    Date of Patent: June 18, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Hiroshi Hatada
  • Patent number: 5111271
    Abstract: A semiconductor device formed by using a standard cell system is a semiconductor device using a multi-layered wiring system. At this time, inter-cell wirings for electrically connecting different standard cells are formed of only a conductive layer which is disposed above a conductive layer constituting intra-cell wirings of the standard cells. Connection between the inter-cell wirings is made above an occupied area of the standard cells on the semiconductor substrate so as to eliminate a channel region.
    Type: Grant
    Filed: June 25, 1990
    Date of Patent: May 5, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Hatada, Shojiro Mori