Abstract: A negative-electrode active material is used for a negative electrode, the negative-electrode active material including: agglomerated particles including nanometer-size silicon produced by heat treating a lamellar polysilane having a structure in which multiple six-membered rings constituted of a silicon atom are disposed one after another, and expressed by a compositional formula, (SiH)n; and a carbon layer including amorphous carbon, and covering at least some of the agglomerated particles to be composited therewith. An electric storage apparatus including the same is not only able to reduce the irreversible capacity, but also able to inhibit the generation of “SEI.

Abstract: A negative-electrode active material is provided, the negative-electrode active material including: a lamellar polysilane having a structure in which multiple six-membered rings constituted of a silicon atom are disposed one after another, and expressed by a compositional formula, (SiH)n, as a basic skeleton; and the negative-electrode active material containing copper in an amount of from 0.01 to 50% by mass. To contain copper results in upgrading electron conductivity. Consequently, an electric storage apparatus using the negative-electrode active material for one of the negative electrodes has upgraded rate characteristic, and also has augmented charged and discharged capacities.

Abstract: A nanometer-size silicon material produced by heat treating a lamellar polysilane exhibits Raman-shift peaks existing at 341±10 cm?1, 360±10 cm?1, 498±10 cm?1, 638±10 cm?1, and 734±10 cm?1 in a Raman spectrum, has a large specific surface area, and has a reduced SiO content.

Abstract: A negative-electrode active material is used for a negative electrode, the negative-electrode active material including: agglomerated particles including nanometer-size silicon produced by heat treating a lamellar polysilane having a structure in which multiple six-membered rings constituted of a silicon atom are disposed one after another, and expressed by a compositional formula, (SiH)n; and a carbon layer including amorphous carbon, and covering at least some of the agglomerated particles to be composited therewith. An electric storage apparatus including the same is not only able to reduce the irreversible capacity, but also able to inhibit the generation of “SEI.

Abstract: A nanometer-size silicon material produced by heat treating a lamellar polysilane exhibits Raman-shift peaks existing at 341±10 cm?1, 360±10 cm?1, 498±10 cm?1, 638±10 cm?1, and 734±10 cm?1 in a Raman spectrum, has a large specific surface area, and has a reduced SiO content.

Abstract: A negative-electrode active material is provided, the negative-electrode active material including: a lamellar polysilane having a structure in which multiple six-membered rings constituted of a silicon atom are disposed one after another, and expressed by a compositional formula, (SiH)n, as a basic skeleton; and the negative-electrode active material containing copper in an amount of from 0.01 to 50% by mass. To contain copper results in upgrading electron conductivity. Consequently, an electric storage apparatus using the negative-electrode active material for one of the negative electrodes has upgraded rate characteristic, and also has augmented charged and discharged capacities.

Abstract: An engine speed control system for controlling the engine speed of an engine (30) for driving an industrial vehicle includes a control unit (50, 70, 85, 95) provided with an internal memory (72) and a first control system which reads a desired engine speed corresponding to an angular displacement of the accelerator pedal (44) detected by an accelerator pedal displacement detecting means (52) from the memory (72) when the running speed of the vehicle is not higher than a maximum running speed set by a maximum running speed setting means (56, 58, 76) connected to the control unit (50, 70, 85, 95) and controls an actuator (38) so as to regulate the opening of a throttle valve (36) of the carburetor (32) such that the engine speed coincides with the desired engine speed read from the memory (72), and a second control system that reads an upper limit desired engine speed for the engine (30) corresponding to the preset maximum running speed when the running speed reaches the preset maximum running speed and control