Patents by Inventor Hiroshi Ikakura

Hiroshi Ikakura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200091218
    Abstract: A semiconductor device comprising a first circuit component and a second circuit component, the first circuit component having a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a first semiconductor substrate, the second circuit component having a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a second semiconductor substrate, the first and second wiring structures being bonded to each other, their bonding planes being composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, numbers of their atoms satisfying a predetermined equation.
    Type: Application
    Filed: September 3, 2019
    Publication date: March 19, 2020
    Inventors: Hiroshi Ikakura, Takumi Ogino
  • Patent number: 10008528
    Abstract: A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged inside the opening. Letting d be a depth of the opening, the opening has, at an upper end of the opening, a shape having a width in a first direction parallel to the surface of the substrate, and a width in a second direction parallel to the surface of the substrate and orthogonal to the first direction. The widths in the first and second directions are different from each other. The shape is capable of drawing, at each point on a circumference of the opening at the upper end, a circle of 0.6d in diameter which contacts the circumference at the point and does not include a portion outside the opening.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: June 26, 2018
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Ikakura, Nobutaka Ukigaya, Jun Iba, Taro Kato, Takehito Okabe
  • Patent number: 9769401
    Abstract: A solid-state imaging apparatus is provided. The apparatus comprises a pixel region where a photoelectric conversion element is arranged, a first insulating film having a first opening portion which is over the photoelectric conversion element, a first insulator comprising a first portion arranged in the first opening portion, and a second portion covering an upper surface of the first portion and an upper surface of the first insulating film, a second insulating film having a second opening portion which is over the first opening portion, and a third portion arranged in the second opening portion. A hydrogen concentration of the second portion is higher than a hydrogen concentration of the first insulating film. An upper surface area of the first portion is larger than a lower surface area of the third portion which is over the first portion.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: September 19, 2017
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takumi Ogino, Hiroshi Ikakura, Yukihiro Hayakawa
  • Publication number: 20170092677
    Abstract: A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged inside the opening. Letting d be a depth of the opening, the opening has, at an upper end of the opening, a shape having a width in a first direction parallel to the surface of the substrate, and a width in a second direction parallel to the surface of the substrate and orthogonal to the first direction. The widths in the first and second directions are different from each other. The shape is capable of drawing, at each point on a circumference of the opening at the upper end, a circle of 0.6d in diameter which contacts the circumference at the point and does not include a portion outside the opening.
    Type: Application
    Filed: September 22, 2016
    Publication date: March 30, 2017
    Inventors: Hiroshi Ikakura, Nobutaka Ukigaya, Jun Iba, Taro Kato, Takehito Okabe
  • Publication number: 20160373665
    Abstract: A solid-state imaging apparatus is provided. The apparatus comprises a pixel region where a photoelectric conversion element is arranged, a first insulating film having a first opening portion which is over the photoelectric conversion element, a first insulator comprising a first portion arranged in the first opening portion, and a second portion covering an upper surface of the first portion and an upper surface of the first insulating film, a second insulating film having a second opening portion which is over the first opening portion, and a third portion arranged in the second opening portion. A hydrogen concentration of the second portion is higher than a hydrogen concentration of the first insulating film. An upper surface area of the first portion is larger than a lower surface area of the third portion which is over the first portion.
    Type: Application
    Filed: June 10, 2016
    Publication date: December 22, 2016
    Inventors: Takumi Ogino, Hiroshi Ikakura, Yukihiro Hayakawa
  • Patent number: 9224777
    Abstract: A method for manufacturing a solid-state image pickup device that includes a substrate including a photoelectric conversion unit and a waveguide arranged on the substrate, the waveguide corresponding to the photoelectric conversion unit and including a core and a cladding, includes a first step and a second step, in which in the first step and the second step, a member to be formed into the core is formed in an opening in the cladding by high-density plasma-enhanced chemical vapor deposition, and in which after the first step, in the second step, the member to be formed into the core is formed by the high-density plasma-enhanced chemical vapor deposition under conditions in which the ratio of a radio-frequency power on the back face side of the substrate to a radio-frequency power on the front face side of the substrate is higher than that in the first step.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: December 29, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Tadashi Sawayama, Hiroshi Ikakura, Takaharu Kondo, Toru Eto
  • Patent number: 9140603
    Abstract: A member for light path to a photoelectric conversion portion includes a middle portion, and a peripheral portion having a refractive index different from the refractive index of the middle portion, and within some plane in parallel with the light receiving surface of a photoelectric conversion portion, and within other plane closer to the light receiving surface than the some plane in parallel with the light receiving surface, the peripheral portion is continuous with the middle portion and surrounds the middle portion, and also the refractive index of the peripheral portion is higher than the refractive index of an insulator film, and the thickness of the peripheral portion within the other plane is smaller than the thickness of the peripheral portion within the some plane.
    Type: Grant
    Filed: May 9, 2014
    Date of Patent: September 22, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Taro Kato, Tadashi Sawayama, Hiroshi Ikakura
  • Publication number: 20140246569
    Abstract: A member for light path to a photoelectric conversion portion includes a middle portion, and a peripheral portion having a refractive index different from the refractive index of the middle portion, and within some plane in parallel with the light receiving surface of a photoelectric conversion portion, and within other plane closer to the light receiving surface than the some plane in parallel with the light receiving surface, the peripheral portion is continuous with the middle portion and surrounds the middle portion, and also the refractive index of the peripheral portion is higher than the refractive index of an insulator film, and the thickness of the peripheral portion within the other plane is smaller than the thickness of the peripheral portion within the some plane.
    Type: Application
    Filed: May 9, 2014
    Publication date: September 4, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Taro Kato, Tadashi Sawayama, Hiroshi Ikakura
  • Patent number: 8773558
    Abstract: A member for light path to a photoelectric conversion portion includes a middle portion, and a peripheral portion having a refractive index different from the refractive index of the middle portion, and within some plane in parallel with the light receiving surface of a photoelectric conversion portion, and within other plane closer to the light receiving surface than the some plane in parallel with the light receiving surface, the peripheral portion is continuous with the middle portion and surrounds the middle portion, and also the refractive index of the peripheral portion is higher than the refractive index of an insulator film, and the thickness of the peripheral portion within the other plane is smaller than the thickness of the peripheral portion within the some plane.
    Type: Grant
    Filed: February 1, 2012
    Date of Patent: July 8, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taro Kato, Tadashi Sawayama, Hiroshi Ikakura
  • Publication number: 20120200727
    Abstract: A member for light path to a photoelectric conversion portion includes a middle portion, and a peripheral portion having a refractive index different from the refractive index of the middle portion, and within some plane in parallel with the light receiving surface of a photoelectric conversion portion, and within other plane closer to the light receiving surface than the some plane in parallel with the light receiving surface, the peripheral portion is continuous with the middle portion and surrounds the middle portion, and also the refractive index of the peripheral portion is higher than the refractive index of an insulator film, and the thickness of the peripheral portion within the other plane is smaller than the thickness of the peripheral portion within the some plane.
    Type: Application
    Filed: February 1, 2012
    Publication date: August 9, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Taro Kato, Tadashi Sawayama, Hiroshi Ikakura
  • Publication number: 20120202310
    Abstract: A method for manufacturing a solid-state image pickup device that includes a substrate including a photoelectric conversion unit and a waveguide arranged on the substrate, the waveguide corresponding to the photoelectric conversion unit and including a core and a cladding, includes a first step and a second step, in which in the first step and the second step, a member to be formed into the core is formed in an opening in the cladding by high-density plasma-enhanced chemical vapor deposition, and in which after the first step, in the second step, the member to be formed into the core is formed by the high-density plasma-enhanced chemical vapor deposition under conditions in which the ratio of a radio-frequency power on the back face side of the substrate to a radio-frequency power on the front face side of the substrate is higher than that in the first step.
    Type: Application
    Filed: February 2, 2012
    Publication date: August 9, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tadashi Sawayama, Hiroshi Ikakura, Takaharu Kondo, Toru Eto
  • Patent number: 6911405
    Abstract: A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.
    Type: Grant
    Filed: November 20, 2001
    Date of Patent: June 28, 2005
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Youichi Yamamoto, Yuichiro Kotake, Hiroshi Ikakura, Shoji Ohgawara
  • Patent number: 6852651
    Abstract: The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.
    Type: Grant
    Filed: October 2, 2001
    Date of Patent: February 8, 2005
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Yuichiro Kotake, Tomomi Suzuki, Hiroshi Ikakura, Kazuo Maeda
  • Patent number: 6815824
    Abstract: The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.
    Type: Grant
    Filed: June 24, 2002
    Date of Patent: November 9, 2004
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co. Ld.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura
  • Patent number: 6649495
    Abstract: The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: November 18, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Tomomi Suzuki, Hiroshi Ikakura, Kazuo Maeda
  • Patent number: 6645883
    Abstract: The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.
    Type: Grant
    Filed: May 24, 2001
    Date of Patent: November 11, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Youichi Yamamoto, Hiroshi Ikakura, Tomomi Suzuki, Yuichiro Kotake, Yoshimi Shioya, Kouichi Ohira, Shoji Ohgawara, Kazuo Maeda
  • Patent number: 6642157
    Abstract: There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: November 4, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Yuichiro Kotake, Youichi Yamamoto, Tomomi Suzuki, Hiroshi Ikakura, Shoji Ohgawara, Kouichi Ohira, Kazuo Maeda
  • Patent number: 6630412
    Abstract: In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.
    Type: Grant
    Filed: July 3, 2001
    Date of Patent: October 7, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura, Youichi Yamamoto
  • Publication number: 20030104689
    Abstract: The present invention provides a manufacturing method of a semiconductor device, in which a main insulating film whose relative dielectric constant is drastically reduced can be formed on a barrier insulating film that covers wirings mainly consist of copper film. The configuration of the method is that film forming gas containing either siloxane or methylsilane, oxygen-containing gas, and etching gas, is transformed into plasma to cause reaction so as to form an insulating film 35b having low dielectric constant on a substrate 21 subject to deposition.
    Type: Application
    Filed: October 30, 2002
    Publication date: June 5, 2003
    Applicant: CANON SALES CO., INC. AND SEMICONDUCTOR PROCESS LABORATORY CO., LTD.
    Inventors: Yoshimi Shioya, Kazuo Maeda, Hiroshi Ikakura
  • Publication number: 20030042613
    Abstract: The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. In structure, the barrier insulating film 34a comprises a double-layered structure or more that is provided with at least a first barrier insulating film 34aa containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film 34ab containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.
    Type: Application
    Filed: June 24, 2002
    Publication date: March 6, 2003
    Applicant: CANON SALES CO., INC.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura