Abstract: The present invention enables frequency response in a wide band without lowering the Q value. This vibrational energy harvester device is provided with: a movable part capable of vibration in a vibration direction as a result of mechanical vibrational energy applied from the exterior, said movable part being provided with a first surface along the vibration direction; and a fixed part provided with a second surface facing the first surface of the movable part with an interval therebetween, said fixed part being configured so as to be positionally fixed even against vibrational energy. A plurality of projections protruding in a direction orthogonal to the vibration direction are formed so as to be arranged like comb teeth in the vibration direction on each of the first surface of the movable part and the second surface of the fixed part. An electret film is formed on at least the first surface of the fixed part or on at least the second surface of the movable part.

Abstract: Provided is an electrostatic-type vibrational energy harvester device that makes it possible to efficiently rectify and charge power from low acceleration to high acceleration of vibrational energy applied from the exterior. The vibrational energy harvester device is provided with: a movable part capable of vibrating in a vibration direction as a result of mechanical vibrational energy, said movable part being provided with a first surface along the vibration direction; and a fixed part provided with a second surface facing the first surface of the movable part with a gap therebetween so that it is possible for the movable part to vibrate in the vibration direction. A plurality of recessed portions and protruding sections are formed in an alternating manner in the vibration direction on the surfaces of each of the first surface of the movable part and the second surface of the fixed part. An electret film is formed on at least one of the fixed part and the movable part.

Abstract: The present invention enables frequency response in a wide band without lowering the Q value. This vibrational energy harvester device is provided with: a movable part capable of vibration in a vibration direction as a result of mechanical vibrational energy applied from the exterior, said movable part being provided with a first surface along the vibration direction; and a fixed part provided with a second surface facing the first surface of the movable part with an interval therebetween, said fixed part being configured so as to be positionally fixed even against vibrational energy. A plurality of projections protruding in a direction orthogonal to the vibration direction are formed so as to be arranged like comb teeth in the vibration direction on each of the first surface of the movable part and the second surface of the fixed part. An electret film is formed on at least the first surface of the fixed part or on at least the second surface of the movable part.

Abstract: Provided is an electrostatic-type vibrational energy harvester device that makes it possible to efficiently rectify and charge power from low acceleration to high acceleration of vibrational energy applied from the exterior. The vibrational energy harvester device is provided with: a movable part capable of vibrating in a vibration direction as a result of mechanical vibrational energy, said movable part being provided with a first surface along the vibration direction; and a fixed part provided with a second surface facing the first surface of the movable part with a gap therebetween so that it is possible for the movable part to vibrate in the vibration direction. A plurality of recessed portions and protruding sections are formed in an alternating manner in the vibration direction on the surfaces of each of the first surface of the movable part and the second surface of the fixed part. An electret film is formed on at least one of the fixed part and the movable part.

Abstract: An actuator includes: an electrostatic actuation mechanism including a stationary electrode and a movable electrode; a first movable part driven by the electrostatic actuation mechanism; a first elastic support part that elastically supports the first movable part; an electret formed in at least one of the stationary electrode and the movable electrode; and a drive control unit that controls application of voltage to the electrostatic actuation mechanism. In the actuator a plurality of stable states are set in which the first movable part is positioned at a stable position at which an electrostatic force generated by the electret matches with an elastic force exerted by the first elastic support part or at a stable position near such stable position. By applying a voltage to the electrostatic actuation mechanism, the first movable part may be displaced from any stable position to another stable position.

Abstract: An actuator includes: an electrostatic actuation mechanism including a stationary electrode and a movable electrode; a first movable part driven by the electrostatic actuation mechanism; a first elastic support part that elastically supports the first movable part; an electret formed in at least one of the stationary electrode and the movable electrode; and a drive control unit that controls application of voltage to the electrostatic actuation mechanism. In the actuator a plurality of stable states are set in which the first movable part is positioned at a stable position at which an electrostatic force generated by the electret matches with an elastic force exerted by the first elastic support part or at a stable position near such stable position. By applying a voltage to the electrostatic actuation mechanism, the first movable part may be displaced from any stable position to another stable position.

Abstract: To propose a gas sensor and a gas sensor structural body that can improve detection sensitivity of gas more than in the conventional gas sensors with a simple configuration. A graphene (8) between a source electrode (3) and a drain electrode (4) is provided in an ion liquid (L), whereby a state change of charges in the ion liquid (L) caused by absorption of gas is directly reflected on a source-drain current (Isd) that flows in the graphene (8). Therefore, it is possible to improve detection sensitivity of the gas more than in the conventional gas sensors. The graphene (8) only has to be provided to be disposed in the ion liquid (L). Therefore, unlike in the conventional gas sensors, a configuration in which carbon nanotubes are surface-chemically modified by a plurality of polymers is unnecessary. Therefore, it is possible to simplify a configuration.

Abstract: A vibration electrode plate 112 is formed on the upper face of a silicon substrate 32 with an insulating coat film 35 interposed in between. An opposing electrode plate 113 is placed on the vibration electrode plate 112 with an insulating coat film interposed in between, and acoustic holes 40 are opened through the opposing electrode plate 113. Etching holes 36 and 104, each having a semi-elliptical shape, are opened through the vibration electrode plate 112 and the opposing electrode plate 113 so as to face each other longitudinally. A concave section 37 having a truncated pyramid shape is formed in the upper face of the silicon substrate 32, by carrying out an etching process through the etching holes 36 and 104. The vibration electrode plate 112 is held in the silicon substrate 32 by a holding portion 112 placed between the etching holes 36.

Abstract: A driving device includes: a movable frame; a frame shaped supporting body arranged on an outer side of the movable frame; and bending drive elements arranged on a surface of the movable frame. The supporting body and the movable frame each have two sets of opposing sides. Supporting parts arranged on first set of opposing sides of the supporting body support first set of opposing sides of the movable frame. The bending drive elements are arranged on the first set of opposing sides of the movable frame. A region arranged with the bending drive elements of the movable frame bends in a thickness direction of the movable frame.

Abstract: A vibration electrode plate 112 is formed on the upper face of a silicon substrate 32 with an insulating coat film 35 interposed in between. An opposing electrode plate 113 is placed on the vibration electrode plate 112 with an insulating coat film interposed in between, and acoustic holes 40 are opened through the opposing electrode plate 113. Etching holes 36 and 104, each having a semi-elliptical shape, are opened through the vibration electrode plate 112 and the opposing electrode plate 113 so as to face each other longitudinally. A concave section 37 having a truncated pyramid shape is formed in the upper face of the silicon substrate 32, by carrying out an etching process through the etching holes 36 and 104. The vibration electrode plate 112 is held in the silicon substrate 32 by a holding portion 112 placed between the etching holes 36.

Abstract: A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs:Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.

Abstract: A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs: Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.