Patents by Inventor Hiroshi Imamoto

Hiroshi Imamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10340818
    Abstract: An actuator includes: an electrostatic actuation mechanism including a stationary electrode and a movable electrode; a first movable part driven by the electrostatic actuation mechanism; a first elastic support part that elastically supports the first movable part; an electret formed in at least one of the stationary electrode and the movable electrode; and a drive control unit that controls application of voltage to the electrostatic actuation mechanism. In the actuator a plurality of stable states are set in which the first movable part is positioned at a stable position at which an electrostatic force generated by the electret matches with an elastic force exerted by the first elastic support part or at a stable position near such stable position. By applying a voltage to the electrostatic actuation mechanism, the first movable part may be displaced from any stable position to another stable position.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: July 2, 2019
    Assignees: National University Corporation Shizuoka University, OMRON Corporation, KABUSHIKI KAISHA SAGINOMIYA SEISAKUSHO
    Inventors: Masato Suzuki, Akito Mori, Gen Hashiguchi, Tatsuhiko Sugiyama, Hiroshi Imamoto, Masatoshi Oba, Hiroyuki Mitsuya, Hisayuki Ashizawa, Kazunori Ishibashi
  • Publication number: 20160204716
    Abstract: An actuator includes: an electrostatic actuation mechanism including a stationary electrode and a movable electrode; a first movable part driven by the electrostatic actuation mechanism; a first elastic support part that elastically supports the first movable part; an electret formed in at least one of the stationary electrode and the movable electrode; and a drive control unit that controls application of voltage to the electrostatic actuation mechanism. In the actuator a plurality of stable states are set in which the first movable part is positioned at a stable position at which an electrostatic force generated by the electret matches with an elastic force exerted by the first elastic support part or at a stable position near such stable position. By applying a voltage to the electrostatic actuation mechanism, the first movable part may be displaced from any stable position to another stable position.
    Type: Application
    Filed: July 30, 2014
    Publication date: July 14, 2016
    Inventors: Masato SUZUKI, Akito MORI, Gen HASHIGUCHI, Tatsuhiko SUGIYAMA, Hiroshi IMAMOTO, Masatoshi OBA, Hiroyuki MITSUYA, Hisayuki ASHIZAWA, Kazunori ISHIBASHI
  • Publication number: 20150323482
    Abstract: To propose a gas sensor and a gas sensor structural body that can improve detection sensitivity of gas more than in the conventional gas sensors with a simple configuration. A graphene (8) between a source electrode (3) and a drain electrode (4) is provided in an ion liquid (L), whereby a state change of charges in the ion liquid (L) caused by absorption of gas is directly reflected on a source-drain current (Isd) that flows in the graphene (8). Therefore, it is possible to improve detection sensitivity of the gas more than in the conventional gas sensors. The graphene (8) only has to be provided to be disposed in the ion liquid (L). Therefore, unlike in the conventional gas sensors, a configuration in which carbon nanotubes are surface-chemically modified by a plurality of polymers is unnecessary. Therefore, it is possible to simplify a configuration.
    Type: Application
    Filed: December 26, 2013
    Publication date: November 12, 2015
    Inventors: Isao Shimoyama, Kiyoshi Matsumoto, Yusuke Takei, Akira Inaba, Kwanghyun Yoo, Masahito Honda, Hiroshi Imamoto
  • Patent number: 7907744
    Abstract: A vibration electrode plate 112 is formed on the upper face of a silicon substrate 32 with an insulating coat film 35 interposed in between. An opposing electrode plate 113 is placed on the vibration electrode plate 112 with an insulating coat film interposed in between, and acoustic holes 40 are opened through the opposing electrode plate 113. Etching holes 36 and 104, each having a semi-elliptical shape, are opened through the vibration electrode plate 112 and the opposing electrode plate 113 so as to face each other longitudinally. A concave section 37 having a truncated pyramid shape is formed in the upper face of the silicon substrate 32, by carrying out an etching process through the etching holes 36 and 104. The vibration electrode plate 112 is held in the silicon substrate 32 by a holding portion 112 placed between the etching holes 36.
    Type: Grant
    Filed: October 28, 2005
    Date of Patent: March 15, 2011
    Assignee: OMRON Corporation
    Inventors: Takashi Kasai, Fumihito Kato, Hiroshi Imamoto, Fumihiko Sato, Masaki Munechika, Toshiyuki Takahashi
  • Publication number: 20070269199
    Abstract: A driving device includes: a movable frame; a frame shaped supporting body arranged on an outer side of the movable frame; and bending drive elements arranged on a surface of the movable frame. The supporting body and the movable frame each have two sets of opposing sides. Supporting parts arranged on first set of opposing sides of the supporting body support first set of opposing sides of the movable frame. The bending drive elements are arranged on the first set of opposing sides of the movable frame. A region arranged with the bending drive elements of the movable frame bends in a thickness direction of the movable frame.
    Type: Application
    Filed: May 16, 2007
    Publication date: November 22, 2007
    Applicant: OMRON Corporation
    Inventors: Yoshikazu Mori, Masao Jojima, Hiroshi Imamoto
  • Publication number: 20070261910
    Abstract: A vibration electrode plate 112 is formed on the upper face of a silicon substrate 32 with an insulating coat film 35 interposed in between. An opposing electrode plate 113 is placed on the vibration electrode plate 112 with an insulating coat film interposed in between, and acoustic holes 40 are opened through the opposing electrode plate 113. Etching holes 36 and 104, each having a semi-elliptical shape, are opened through the vibration electrode plate 112 and the opposing electrode plate 113 so as to face each other longitudinally. A concave section 37 having a truncated pyramid shape is formed in the upper face of the silicon substrate 32, by carrying out an etching process through the etching holes 36 and 104. The vibration electrode plate 112 is held in the silicon substrate 32 by a holding portion 112 placed between the etching holes 36.
    Type: Application
    Filed: October 28, 2005
    Publication date: November 15, 2007
    Inventors: Takashi Kasai, Fumihito Kato, Hiroshi Imamoto, Fumihiko Sato, Masaki Munechika, Toshiyuki Takahashi
  • Patent number: 5010556
    Abstract: A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs:Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.
    Type: Grant
    Filed: January 13, 1989
    Date of Patent: April 23, 1991
    Assignee: Omron Tateisi Electronics Co.
    Inventors: Koichi Imanaka, Hiroshi Imamoto
  • Patent number: 4839307
    Abstract: A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs: Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.
    Type: Grant
    Filed: May 11, 1987
    Date of Patent: June 13, 1989
    Assignee: Omron Tateisi Electronics Co.
    Inventors: Koichi Imanaka, Hiroshi Imamoto