Abstract: An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10?2 ?cm or less.

Abstract: An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (21) including an electrostatic chuck section (22), a metal base section (23) serving as a high-frequency generating electrode, and an insulating plate (24). The electrostatic chuck section (22) is composed of a dielectric plate (31) whose top surface (31a) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (32), an electrostatic-adsorption inner electrode (25), and an insulating layer (33). The electrostatic-adsorption inner electrode (25) is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volumetric resistance of not less than 1.0×10?1 ?cm but not more than 1.0×108 ?cm.

Abstract: An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (21) including an electrostatic chuck section (22), a metal base section (23) serving as a high-frequency generating electrode, and an insulating plate (24). The electrostatic chuck section (22) is composed of a dielectric plate (31) whose top surface (31a) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (32), an electrostatic-adsorption inner electrode (25), and an insulating layer (33). The electrostatic-adsorption inner electrode (25) is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volumetric resistance of not less than 1.0×10?1 ?cm but not more than 1.0×108 ?cm.

Abstract: An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.

Abstract: An electrostatic chuck device includes: an electrostatic chuck section including a substrate, which has a main surface serving as a mounting surface on which a plate-like sample is mounted and an electrostatic-adsorption inner electrode built therein, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode; and a metal base section that is fixed to the other main surface of the electrostatic chuck section so as to be incorporated into a body and that serves as a high frequency generating electrode. Here, the electrostatic-adsorption inner electrode has one or more electrode portions, and a resistance value of a distance between a point corresponding to a center axis of the substrate or a point closest to the center axis and a point most distant from the center axis among distances between two points in the electrode portion is in the range of 102? to 1010?.

Abstract: An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10?2?cm or less.

Abstract: An electrostatic chuck device includes: an electrostatic chuck section including a substrate, which has a main surface serving as a mounting surface on which a plate-like sample is mounted and an electrostatic-adsorption inner electrode built therein, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode; and a metal base section that is fixed to the other main surface of the electrostatic chuck section so as to be incorporated into a body and that serves as a high frequency generating electrode. Here, the volume resistivity of the electrostatic-adsorption inner electrode is in the range of 1.0×10?1?cm to 1.0×108 ?cm.

Abstract: An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.

Abstract: One object of the present invention is to provide a chucking apparatus and its production method that is capable of carrying out holding, alignment, transport and so forth without causing problems such as the generation of particles. In order to achieve this object, the present invention provides a chucking apparatus provided with a base in which protrusions or grooves are formed on one of its faces to form an irregular surface, and the apical surfaces of protrusions of the irregular surface serve as a chucking surface for chucking and holding a plate-shaped sample, wherein the apical and lateral surfaces of the above protrusions, and the bottom surfaces of the above indentations, are all polished.

Abstract: A susceptor device comprises a susceptor base body, a temperature controlling section, an adhesive layer which attaches the susceptor base body and the temperature controlling section unitarily, an O-ring which is disposed near a peripheral section of the adhesive layer, a circular O-ring which is disposed on a bottom surface of the temperature controlling section, an O-ring supporting section which surrounds the temperature controlling section and compresses the O-rings on the temperature controlling section, and pushup screws which push up and fix the O-ring supporting section toward the temperature controlling section. By doing this, it is possible to protect the adhesive layer from an external environment. Also, it is possible to provide a susceptor device having a superior temperature controlling characteristics for the plate sample, operational stability, and durability.

Abstract: A susceptor device comprises a susceptor base body, a temperature controlling section, an adhesive layer which attaches the susceptor base body and the temperature controlling section unitarily, an O-ring which is disposed near a peripheral section of the adhesive layer, a circular O-ring which is disposed on a bottom surface of the temperature controlling section, an O-ring supporting section which surrounds the temperature controlling section and compresses the O-rings on the temperature controlling section, and pushup screws which push up and fix the O-ring supporting section toward the temperature controlling section.

Abstract: A built-in electrode type susceptor having excellent corrosion resistance and plasma resistance is obtained. A placement plate and a support plate made of ceramics are prepared, fixation holes are formed in this support plate, and feeding terminals consisting of a conductive composite ceramics are fitted into these fixation holes so as to penetrate through the support plate. A conductive material layer consisting of a conductive composite ceramics is formed on this support plate so as to come into contact with the feeding terminals, and the support plate and the placement plate are overlapped on each other via the conductive material layer on the support plate, and subjected to sintering and heat treatment under application of pressure, to thereby integrate these plates. Also, the conductive material layer is used as an internal electrode consisting of a conductive composite ceramics sintered body, to thereby obtain a built-in electrode type susceptor.

Abstract: One object of the present invention is to provide a chucking apparatus and its production method that is capable of carrying out holding, alignment, transport and so forth without causing problems such as the generation of particles. In order to achieve this object, the present invention provides a chucking apparatus provided with a base in which protrusions or grooves are formed on one of its faces to form an irregular surface, and the apical surfaces of protrusions of the irregular surface serve as a chucking surface for chucking and holding a plate-shaped sample, wherein the apical and lateral surfaces of the above protrusions, and the bottom surfaces of the above indentations, are all polished.

Abstract: A built-in electrode type susceptor having excellent corrosion resistance and plasma resistance is obtained.