Abstract: A photodiode includes semiconductor layers and a gate insulating layer provided on a buried insulating layer formed on a substrate and has a diffraction grating portion in which a plurality of groove portions are formed in a two-dimensional lattice shape, on the gate insulating layer. Measurement light is guided by an optical system including a photoelastic modulator and is incident on the photodiode. The measurement light is emitted from the light source device in a state of being linearly polarized light having a predetermined wavelength and is converted at a predetermined frequency by the optical system such that states in which the measurement light becomes linearly polarized light beams of two orthogonal directions are repeated. In addition, electric signals from the photodiode in the state in which the measurement light becomes the linearly polarized light beams of the two orthogonal directions are lock-in detected.

Abstract: A photodiode includes semiconductor layers and a gate insulating layer provided on a buried insulating layer formed on a substrate and has a diffraction grating portion in which a plurality of groove portions are formed in a two-dimensional lattice shape, on the gate insulating layer. Measurement light is guided by an optical system including a photoelastic modulator and is incident on the photodiode. The measurement light is emitted from the light source device in a state of being linearly polarized light having a predetermined wavelength and is converted at a predetermined frequency by the optical system such that states in which the measurement light becomes linearly polarized light beams of two orthogonal directions are repeated. In addition, electric signals from the photodiode in the state in which the measurement light becomes the linearly polarized light beams of the two orthogonal directions are lock-in detected.

Abstract: The invention can include a token list generating unit 11 for decomposing a natural language text to be processed into tokens that are components of the natural language text and registering them on a token list, and a token string selecting unit 13 for selecting optimum token strings for composing the natural language text to be processed on the basis of the token list generated by the token list generating unit 11. The token list generating unit 11 registers, on the token list, tokens among the tokens obtained by decomposing the natural language text to be processed except tokens decomposable into smaller tokens according to conditions imposed on the morphological analysis.

Abstract: A vehicle is provided which enables rear occupants to sit on a rear seat in a vehicle provided with seats arranged in a substantially longitudinal direction while simultaneously securing the comfort and safety of the rear occupants in a relatively small vehicle. The seat structure of the vehicle includes a wide rear seat provided with right and left seated parts for rear occupants M2, M2 at a rear side of a front seat for a driver. A backrest corresponding to the right and left seated parts is provided on the rear seat that extends diagonally rearward from a center portion thereof toward sides of the vehicle body. Raised, convex portions for regulating the lateral movement of the occupants are provided between each seated part in the rear seat, at the center of the backrest and in the front seat.

Abstract: A vehicle is provided which enables rear occupants to sit on a rear seat in a vehicle provided with seats arranged in a substantially longitudinal direction while simultaneously securing the comfort and safety of the rear occupants in a relatively small vehicle. The seat structure of the vehicle includes a wide rear seat provided with right and left seated parts for rear occupants M2, M2 at a rear side of a front seat for a driver. A backrest corresponding to the right and left seated parts is provided on the rear seat that extends diagonally rearward from a center portion thereof toward sides of the vehicle body. Raised, convex portions for regulating the lateral movement of the occupants are provided between each seated part in the rear seat, at the center of the backrest and in the front seat.

Abstract: The invention can include a token list generating unit 11 for decomposing a natural language text to be processed into tokens that are components of the natural language text and registering them on a token list, and a token string selecting unit 13 for selecting optimum token strings for composing the natural language text to be processed on the basis of the token list generated by the token list generating unit 11. The token list generating unit 11 registers, on the token list, tokens among the tokens obtained by decomposing the natural language text to be processed except tokens decomposable into smaller tokens according to conditions imposed on the morphological analysis.

Abstract: A cooling device is efficiently arranged which simplifies and reduces the weight of piping for the cooling device by shortening the piping. A cooling water pump is arranged on a vertically elongated skid plate at one side of a crankcase. A reservoir tank is located on the other side of the crankcase. The reservoir tank is formed of synthetic resin or similar material. The reservoir tank is housed in a space between the skid plate and a front section of an ACG case of the reservoir tank.

Abstract: A compact air cleaner for a motorcycle engine has its intake duct directed in a widthwise direction of the motorcycle. The air cleaner includes an air cleaner case, an air cleaner element and a case cover. The air cleaner element partitions an inner portion of the air cleaner case and case cover into a clean room and a dirty room. The air cleaner element extends in the motorcycle's travel direction. An intake port communicates with the dirty room and opens to a space surrounded by a rear face of the clean room, a front portion of a rear fender and a bottom portion of a seat.

Abstract: This invention provides a semiconductor device including a silicon layer, an insulating layer formed on the silicon layer, a first semiconductor device formed on the insulating film to convert light into an electric signal, and a second semiconductor device formed on the insulating film, wherein a silicon region is formed in the silicon layer to shield the second semiconductor device from light, and a through hole extending through the silicon layer except for the silicon region to input light to the first semiconductor device is formed in that portion of the silicon layer corresponding to the lower portions of the first and second semiconductor devices.

Abstract: A method for fabricating semiconductor devices wherein polysilicon gates for complementary-type field-effect semiconductor devices are formed of polysilicon to which impurity doped simultaneously to the polysilicon deposition; the both gates having the dual N.sup.+ /P.sup.+ polysilicon gate structure, so that the both N- and P-channel transistors are formed as the surface-channel type ones; and therefore, the off-characteristic, the short channel effect, and the controllability of threshold voltage are progressed. More specifically, N- and P-channel MISFETs are provided on a common semiconductor substrate (1); N-type polysilicon (9) doped with N-type impurity is adopted as the gate electrode for the N-channel MISFET; P-type polysilicon (8) doped with P-type impurity is adopted as the gate electrode for the P-channel MISFET; and a narrow region preventing the mutual diffusion of impurities is provided between portions of respective polysilicon.

Abstract: A method for fabricating semiconductor devices wherein polysilicon gates for complementary-type field-effect semiconductor devices are formed of polysilicon to which impurity doped simultaneously to the polysilicon deposition; the both gates having the dual N.sup.+ /P.sup.+ polysilicon gate structure, so that the both N- and P-channel transistors are formed as the surface-channel type ones; and therefore, the off-characteristic, the short channel effect, and the controllability of threshold voltage are progressed. More specifically, N- and P-channel MISFETs are provided on a common semiconductor substrate (1); N-type polysilicon (9) doped with N-type impurity is adopted as the gate electrode for the N-channel MISFET; P-type polysilicon (8) doped with P-type impurity is adopted as the gate electrode for the P-channel MISFET; and a narrow region preventing the mutual diffusion of impurities is provided between portions of respective polysilicon.

Abstract: In a method of making a MOSFET-type semiconductor device of this invention, a surface of a semiconductor substrate is covered in a predetermined pattern with an insulating layer comprising a silicon-nitride-containing film or with an insulating layer whose top surface and side surfaces bear a silicon-nitride-containing film, thereby forming on the semiconductor substrate a recess region at which the semiconductor substrate is exposed. An epitaxial silicon film and polycrystalline silicon film are formed simultaneously on the exposed semiconductor substrate and on the insulating film, respectively. A whole channel region and a part of source and drain diffused-layer regions are formed in the epitaxial silicon film, and source and drain diffused-layer regions are formed in the polycrystalline silicon film. A gate electrode of this MOSFET-type semiconductor device may be formed at the recess region by a self-align method.