Patents by Inventor Hiroshi Iwata

Hiroshi Iwata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130241448
    Abstract: A photovoltaic apparatus according to the present invention includes a photovoltaic module and a tracking control device. The photovoltaic module includes a plurality of series portions coupled in parallel. The series portion includes a plurality of photovoltaic elements coupled in series. The photovoltaic elements coupled in a same straight row of the plurality of series portions are coupled parallel to one another. The tracking control device is configured to perform a maximum power point tracking control on an output of the photovoltaic module. The photovoltaic module includes a temperature sensor that detects a real panel temperature that is a panel temperature when the photovoltaic module is operating.
    Type: Application
    Filed: March 18, 2013
    Publication date: September 19, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Yoshifumi YAOI, Kohtaroh KATAOKA, Masatomi HARADA, Kohichiroh ADACHI, Yoshiji OHTA, Hiroshi IWATA
  • Publication number: 20130221385
    Abstract: A light-emitting element includes a first conductivity type semiconductor base, a plurality of first conductivity type protrusion-shaped semiconductors formed on the semiconductor base, and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors.
    Type: Application
    Filed: June 22, 2011
    Publication date: August 29, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Akihide Shibata, Tetsu Negishi, Kenji Komiya, Yoshifumi Yaoi, Takeshi Shiomi, Hiroshi Iwata, Akira Takahashi
  • Publication number: 20130168708
    Abstract: This method for disposing fine objects, in a substrate preparing step, prepares a substrate having specified positions where fine objects (120) are to be disposed in an area where a first electrode (111) and a second electrode (112) face each other, and in a fluid introducing step, a fluid (121) is introduced on the substrate (110). The fluid (121) contains a plurality of the fine objects (120). The fine objects (120) are diode elements, each of which has, as an alignment structure, a front side layer (130) composed of a dielectric material, and a rear side layer (131) composed of a semiconductor. In the fine object disposing step, by applying an AC voltage to between the first electrode (111) and the second electrode (112), the fine objects (120) are disposed by dielectrophoresis with the front side layer (130) facing up at the predetermined positions in the area (A) where the first electrode (111) and the second electrode (112) face each other.
    Type: Application
    Filed: June 14, 2011
    Publication date: July 4, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Akihide Shibata, Tetsu Negishi, Kenji Komiya, Yoshifumi Yaoi, Takeshi Shiomi, Hiroshi Iwata, Akira Takahashi
  • Publication number: 20130106342
    Abstract: This DC/DC converter includes a first DC/DC converter, and a second DC/DC converter for carrying out a DC/DC conversion of voltage supplied from the first DC/DC converter. One of either the first DC/DC converter or the second DC/DC converter is a fixed-factor DC/DC converter, and the other of either the first DC/DC converter or the second DC/DC converter is a variable-factor DC/DC converter.
    Type: Application
    Filed: October 31, 2012
    Publication date: May 2, 2013
    Inventors: Hiroshi IWATA, Yoshifumi YAOI, Kenji KOMIYA, Masaru NOMURA, Yoshiji OHTA
  • Publication number: 20130083580
    Abstract: The switching power supply device is provided with a high-withstand voltage first transistor, a first electrode of which being connected to a first node; a low-withstand voltage second transistor, a first electrode of which being connected to a second electrode of the first transistor, and a second electrode of which being connected to a second node; and a drive circuit. Each of the first and second transistors has a parasitic diode connected in the forward direction between the second and first electrodes. The drive circuit, in a case where electrical current is to flow from the first node to the second node, turns on the first and second transistors, and, in a case where electrical current is to flow from the second node to the first node, turns on the first transistor, and turns off the second transistor.
    Type: Application
    Filed: September 11, 2012
    Publication date: April 4, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Kenji KOMIYA, Shuji Wakaiki, Akihide Shibata, Hiroshi Iwata
  • Publication number: 20130069582
    Abstract: A push-pull circuit comprising: a push-pull first switching element and second switching element; a first rectifier element; a third switching element for switching a pathway between conductance and cutoff, the pathway leading from a connection point between the first switching element and an inductive load via the first rectifier element to a connection point between a DC power source and a center tap of the inductive load; a second rectifier element; and a fourth switching element for switching a pathway between conductance and cutoff, the pathway leading from a connection point between the second switching element and the inductive load via the second rectifier element to a connection point between the DC power source and the center tap of the inductive load.
    Type: Application
    Filed: September 7, 2012
    Publication date: March 21, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Kenji KIMOTO, Hiroshi IGARASHI, Yoshifumi YAOI, Kenji KOMIYA, Masaru NOMURA, Yoshiji OHTA, Hiroshi IWATA
  • Publication number: 20130068277
    Abstract: A photovoltaic module of the present invention includes a cluster power generation unit in which multiple photovoltaic elements are connected in series via connection points, a pair of output terminals connected to respective ends of a series circuit formed by the cluster power generation unit, and a specified terminal connected to a specified connection point that is specified from among the connection points.
    Type: Application
    Filed: August 17, 2012
    Publication date: March 21, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Kohtaroh KATAOKA, Kohichiroh ADACHI, Masatomi HARADA, Yoshiji OHTA, Hiroshi IWATA, Shinpei HIGASHIDA
  • Publication number: 20130054069
    Abstract: A vehicle driving device is arranged such that in accordance with an instruction signal from the outside, a first battery managing section outputs, to the outside, a signal related to charging/discharging control for a first battery.
    Type: Application
    Filed: August 27, 2012
    Publication date: February 28, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Kenji KOMIYA, Akihide SHIBATA, Masaru NOMURA, Yoshiji OHTA, Hiroshi IWATA
  • Publication number: 20130049620
    Abstract: In order to offer a power supply circuit that can minimize the drop in efficiency by reducing losses during voltage conversion, in an improved-power factor circuit, a control circuit performs a step-up operation in which a control signal for turning on a first switching element (Tr1) and switching a second switching element (Tr2) is output, and a step-down operation in which a control signal for turning off the second switching element (Tr2) and switching the first switching element (Tr1) is output.
    Type: Application
    Filed: August 29, 2012
    Publication date: February 28, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Kenji KOMIYA, Takeshi Shiomi, Yoshifumi Yaoi, Masaru Nomura, Kohichiroh Adachi, Yoshiji Ohta, Hiroshi Iwata
  • Publication number: 20130027623
    Abstract: A metal line 731 is formed in a linear area S of an insulative substrate 720, and moreover a metal line 732 is formed generally parallel to the metal line 731 with a specified distance thereto. The metal line 731 is connected to an n-type semiconductor core 701 of bar-like structure light-emitting elements 710A to 710D, and the metal line 732 is connected to a p-type semiconductor layer 702. By dividing the insulative substrate 720 into a plurality of divisional substrates, a plurality of light-emitting devices in each of which a plurality of bar-like structure light-emitting elements 710 are placed on the divisional substrates are formed.
    Type: Application
    Filed: February 22, 2011
    Publication date: January 31, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tetsu Negishi, Akihide Shibata, Kenji Komiya, Fumiyoshi Yoshioka, Hiroshi Iwata, Akira Takahashi
  • Publication number: 20120326181
    Abstract: In a light emitting device, one hundred or more bar-like structured light emitting elements (210) each having a light emitting area of 2,500? ?m2 or less are placed on a mounting surface of one insulating substrate (200), so that the light emitting device fulfills little variation in luminance, long life, and high efficiency by dispersion of light emission with suppression of increase in temperatures in light emitting operations.
    Type: Application
    Filed: January 25, 2011
    Publication date: December 27, 2012
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Akihide Shibata, Tetsu Negishi, Kenji Komiya, Hiroshi Iwata, Akira Takahashi
  • Patent number: 8252164
    Abstract: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
    Type: Grant
    Filed: May 23, 2011
    Date of Patent: August 28, 2012
    Assignees: Nanosys, Inc., Sharp Kabushiki Kaisha
    Inventors: Samuel Martin, Xiangfeng Duan, Katsumasa Fujii, James M. Hamilton, Hiroshi Iwata, Francisco Leon, Jeffrey Miller, Tetsu Negishi, Hiroshi Ohki, J. Wallace Parce, Cheri X. Y. Pereira, Paul John Schuele, Akihide Shibata, David P. Stumbo, Yasunobu Okada
  • Patent number: 8225235
    Abstract: To provide a reproduction apparatus able to easily select a desired content data based on an attribute of the content data by a simple operation from a user and a reproduction method for the same, wherein the reproduction apparatus having: a display displaying the item; a first operation unit instructing a switch of the attribute; a second function unit instructing a selection of a predetermined item on the display; and a processing unit switching a first screen from a screen of a plurality of items so as to display a plurality of items when the first operation key is operated, and switching to a second screen displaying a plurality of item when the second operation key is operated when a plurality of item is displayed on the first screen.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: July 17, 2012
    Assignee: Sony Corporation
    Inventors: Naoko Takeda, Kissei Matsumoto, Takashi Kumagai, Toshihide Ooba, Hiroshi Iwata, Shingo Yamade
  • Publication number: 20120112084
    Abstract: According to one embodiment, a radiation detection apparatus includes a radiation detection panel, a support member, a circuit board, a flexible circuit board, a housing, a connecting member, a thermally radiative member, and a thermally conductive member. The support member supports the radiation detection panel on one surface thereof. The circuit board is supported by other surface of the support member, and drives the radiation detection panel. The flexible circuit board electrically connects the radiation detection panel with the circuit board, and on which an integrated circuit is mounted. The housing has thermal insulation, and a part of which is provided with an opening. The connecting member is connected to the support member and the housing. The thermally radiative member is located outside the housing and extends through the opening. The thermally radiative member is opposed to the integrated circuit, and shields an electromagnetic field that leaks from the opening.
    Type: Application
    Filed: November 4, 2011
    Publication date: May 10, 2012
    Inventors: Katsuya YAMADA, Yasuaki Kawasaki, Hiroshi Iwata
  • Publication number: 20120088737
    Abstract: The present invention provides a pharmaceutical which possesses an excellent inhibitory effect on NHE3 (Na+/H+ exchanger type 3) and effectively improves diseases or conditions of organs in which NHE3 is expressed.
    Type: Application
    Filed: October 1, 2010
    Publication date: April 12, 2012
    Applicant: AJINOMOTO CO., INC
    Inventors: Wataru MIYANAGA, Yoichiro SHIMA, Misato NOGUCHI, Akiko OONUKI, Yayoi KAWATO, Hiroshi IWATA, Eri HARADA, Ryuta TAKASHITA, Hirokazu UENO, Tadakiyo NAKAGAWA
  • Patent number: 8153207
    Abstract: A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.
    Type: Grant
    Filed: June 19, 2009
    Date of Patent: April 10, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Nobutoshi Arai, Hiroshi Iwata
  • Patent number: 8129768
    Abstract: An integrated circuit device of the present invention includes a substrate on which at least two types of nano wire element are provided. These nano wire elements have functions and materials different from each other. The nano wire elements are constituted by nano wires having sizes differing depending on types of nano wire element. With this, it is possible to dramatically improve a function of the integrated circuit device, as compared with an integrated circuit device including a substrate on which one type of nano wire element is provided.
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: March 6, 2012
    Assignees: Sharp Kabushiki Kaisha, Nanosys, Inc.
    Inventors: Akihide Shibata, Katsumasa Fujii, Yutaka Takafuji, Hiroshi Iwata
  • Publication number: 20120025060
    Abstract: A color filter is formed using a simple manufacturing method, and bias application to a pixel separating electrode allows sensitivity in low illumination intensity to be improved. In a solid-state imaging element, in which a plurality of unit pixel sections are disposed two dimensionally on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, each unit pixel section having a light receiving section for generating a signal charge by light irradiation, an adjoining unit pixel section is formed in the same color to allow for lesser alignment accuracy of the color filter. A pixel separating electrode is formed in the adjoining unit pixel section, and a signal charge is shared by bias application during low illumination intensity, thereby improving an effective photodiode area.
    Type: Application
    Filed: December 18, 2009
    Publication date: February 2, 2012
    Applicant: Sharp Kabushiki Kaisha
    Inventor: Hiroshi Iwata
  • Publication number: 20110284380
    Abstract: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
    Type: Application
    Filed: May 23, 2011
    Publication date: November 24, 2011
    Inventors: Samuel MARTIN, Xiangfeng Duan, Katsumasa Fujii, James M. Hamilton, Hiroshi Iwata, Francisco Leon, Jeffrey Miller, Tetsu Negishi, Hiroshi Ohki, J. Wallace Parce, Cheri X.Y. Pereira, Paul John Schuele, Akihide Shibata, David P. Stumbo, Yasunobu Okada
  • Patent number: 8059080
    Abstract: To provide a semiconductor storage unit that has a simple structure requiring only a small number of processes to produce, and is provided with a gate insulating film having a memory function. The semiconductor storage unit has a semiconductor layer, two diffusion layer regions forming a source region and a drain region, which are formed on the semiconductor layer, a channel region fixed between the two diffusion layer regions, a gate insulating film that is formed on the channel region, and made of a silicon oxide film containing carbon atoms of 0.1 to 5.0 atomic percent, and a gate electrode formed on the gate insulating film.
    Type: Grant
    Filed: November 26, 2007
    Date of Patent: November 15, 2011
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hiroshi Iwata, Akihide Shibata, Kohichiro Adachi, Masayuki Nakano